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Professor Naci Balkan CPhy
FInstP
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Naci Balkan has been active in semiconductor research since 1975, when
he started his PhD at the University of Glasgow. At the time, his main
interest was in the field of amorphous semiconductors, in particular, Ge
and Si grown with thermal evaporation or RF sputtering. He continued
with research in amorphous semiconductors until 1983 and published
widely on low frequency AC loss in amorphous Si and Ge. Between 1980 and
1983 he worked as a lecturer at Hacettepe, and Bogazici universities in
Turkey. He joined the semiconductors group at Essex as a senior research
officer in 1984, where his research interests moved to hot-electron
transport, optical spectroscopy and instabilities in low dimensional
III-V material systems such as GaAs/ GaAlAs and GaInAs/GaAs quantum
wells. In 1990, he became a lecturer and established his own research
group in semiconductor materials and devices. The application of
hot-electrons in optoelectronic devices became the focal point of his
interest. This research led to the discovery of hot-electron vertical
cavity surface emitting lasers (HELLISH - VCSEL) and top-hat HELLISH for
wavelength conversion and optical amplification. He is also engaged in
the study of novel material systems for applications in optoelectronic
devices, including GaN, GaInAsN, and GaInAsP, GaBiN for displays,
lasers and solar cells. He has participated in over 25 national and
international projects as either principal investigator or
co-investigator, or consultant with funding from a wide range of sources
including: EPSRC, NATO, TUBITAK-Turkey, the British Council, the
European Commission, the Royal Society and the University of Essex. He
has published over 200 research papers and book chapters, edited and
co-edited special issue scientific journals, four reference books and
co-authored a text book and a popular science book. He serves in the
scientific committees of prominent international scientific conferences.
Optoelectronic Materials & Devices Lab Information DINAMITE Network of Excellence National and International Activities COST Action MP805: Novel Gain Materials and Devices based on III-V-N Compounds
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Last updated: 22 April 2014 |