Network of excellence
PART B

INFORMATION SOCIETY TECHNOLOGIES

IST-2002-2.3.2.2

DINAMITE
(Dilute Nitride-Arsenide-Materials for Innovative Technologies)
Coordinator: University of Essex

Contact: Professor N. Balkan; e-mail: Balkan@essex.ac.uk, Fax:0044 1206 873598

Partner No	Company/Institution	Short name	
2	Agilent Technologies, Torino, Italy	Agilent	
3	Akdeniz Univ. Antalya, Turkey	AKDENIZ	
4	Bilkent Univ. Ankara, Turkey	BILKENT	
5	Cumhuriyet Univ, Sivas, Turkey	CUMH	
6	Dokuz Eylul Univ, Izmir, Turkey	DEYL	
7	VOID (Last minute withdrawal)		
8	Helsinki Univ. of Technol, Finland	HUT	
9	Imperial College, UK	IMP	
10	Infineon , Muenchen, Germany	INFINEON	
11	CNRS-INSA, Toulouse, France	INSA	
12	Istanbul Univ. Turkey	IU	
13	LAAS-CNRS, Toulouse, France	LAAS	
14 	LPN-CNRS, Marcoussis, France	LPN	
15	Linkoping Univ. Sweden	LIU	
16	Univ. Of Appl Sciences, Munich, Germany	FHM	
17	Nanoplus, Gerbrunn, Germany	NANOPLUS	
18	University of Marburg, Germany	MARBURG	
19	University Politechnica, Madrid, Spain	UPM	
20	Royal Inst of Technol	KTH	
21	Ruhr Universiy, Bochum, Germany	RUHR	
22	University of Technology, Tampere, Finland	TUT	
23	Technical Univ. Lodt, Poland	LODZ	
24	NIRDMP, Bucharest, Romania	INFIM	
25	VOID (Last minute withdrawal)		
26	Univ. of Montpllier, France	MONTP	
27	Univ of Erlangen, Germany	ERLAN	
28	Univ. of Athens, Greece	ATHENS	
29	Univ. of Aveiro, Portugal	AVEIRO	
30 	Univ. of Bologna, Italy	BO	
31	University of Bristol, UK	BRIS	
32	University of Cadiz, Spain	UCA	
33	University of Karlsruhe, Germany	KARLS	
34	University of Liverpool, UK	LIV	
35	Univ. of Nottingham, UK	NOTT	
36	University of Paul- sabatier, Toulouse, France	UPS	
37	Univ. of ROMA, Italy	ROMA	
38	University of Sheffield, UK	SHEFF	
39	Univ. of Strathclyde, Glasgow, UK	STRATH	
40	Univ. of Surrey, Guildford, UK	SURREY	
41	Univ. of Warwick, UK	WARW	
42	NMRC, Cork, Ireland	NMRC	
43	Wroclaw Univ. of Technol. Poland	WUT	
44	Intexys, Labege, France	INTEXYS	
45	Comlase NT AB, Stockholm, Sweden	COMLASE	
46	Sacher Lasertechnik GmbH, Marburg, Germany                     	SACHER	
47	EPICHEM ltd. Wirral, UK	EPICHEM	
48	VOID (Last minute withdrawal)		
49	CRHEA/CNRS, France	CRHEA	
50	Faculte des Sciences de Monastir, Tunisia	FSM	

	Table of contents

1.	Proposal summary
2.	B 1: Objectives of the network
3.	B 2: Relevance to the objectives of the IST Priority
4.	B 3: Potential impact
5.	B 4: Degree of Integration and Joint Programme Activities
6.	B 5: Description of the Consortium and Excellence of Partners
7.	B 6: Quality of the integration
8.	B 7: Organisation and management
9.	B 8: Joint Programme of Activities – first 18 months
10.	B 9: Other issues
11.	B 10: Gender issues

Proposal summary 

Full Title:	Dilute Nitride-Arsenide-Materials for Innovative
		Technologies” 
Acronym :	DiNAMITe

Strategic objectives addressed
2.3.2.2 Optical, opto-electronic, and photonic functional components
“To develop advanced materials, micro- and nano-scale photonic structures and devices, solid-state sources and to realise optoelectronic integrated circuits (OEIC). In the last 20 years, optics and photonics have become increasingly pervasive in a wide range of industrial applications. It has now become the heart of a new industry, building on microelectronics with which it will be increasingly linked.

Proposal abstract 
Dilute nitrides have emerged from conventional III-V semiconductors such as GaAs or InP by the insertion of nitrogen into the group V sub-lattice, which has profound influence on the electronic properties of these materials and allows widely extended band structure engineering. This is expected to lead to novel devices, e.g. for optical data transmission or for gas sensing, some of which are already making their way into the market. The two ultimate aims of the proposed NoE are (1) to bring together the current expertise and resources for the integration of the research capabilities in the field of dilute nitride materials and, through the invention, design, manufacturing and application of novel devices and systems contribute to the competitiveness of future European photonics technologies and, (2) to spread excellence through training courses, regular workshops and scientific meetings, and encouraging joint supervision and extended visits of PhD students. We encourage the sharing and development of research infrastructures for common use. An interactive WEB site, will serve as a virtual centre of excellence, through and after the proposed programme.

In order to achieve the aims we set key research areas and establish strong collaboration between the research groups in the consortium to tackle the problems and coordinate the execution of research projects. A joint academic/industrial advisory committee meeting regularly will ensure rapid dissemination and transition of the research results from the laboratory to conveyor belt.

The objectives of DiNAMITe are listed under five work packages The work packages address the integration of activities, joint research activities and spreading of excellence in all aspects from material growth and characterisation to theory of material properties, device modelling and fabrication as well as device characterisation in a comprehensive way by coordinating the efforts of about 30 core and 20 peripheral research groups, many of which are leaders in their respective fields. This will lead to an unprecedented knowledge base and technological control of dilute nitrides that can be exploited for use in innovative optoelectronic and electronic devices.

The proposed NoE addresses two problems that were identified for the European Research Area : (a) fragmentation of its research and (b) weakness at converting R&D results into useful economic or society benefits, the latter by its dedication to lead dilute nitrides into industrial exploitation.

B.1 Objectives of the network

Dilute nitrides have emerged from conventional III-V semiconductors such as GaAs or InP by the insertion of nitrogen into the group V sub-lattice, which has profound influence on the electronic properties of these materials and allows a widely extended band structure engineering. This is expected to lead to novel devices, e.g. for optical data transmission, solar cells, biophotonics or gas sensing, some of which are already making their way into the market. The proposed NoE will address all aspects from material growth and characterisation to theory of material properties, device modelling and fabrication as well as device characterisation in a comprehensive way by coordinating the efforts of 46 research groups, many of which are leaders in their respective fields. This will lead to an unprecedented knowledge base and technological control of dilute nitrides that can be exploited for use in innovative optoelectronic and electronic devices.

The proposed NoE addresses two problems that were identified for the European Research Area: (a) fragmentation of its research and (b) weakness at converting R&D results into useful economic or society benefits, the latter by its dedication to lead dilute nitrides into industrial exploitation

III-V Semiconductors (“III-Vs”) are indispensable for the realisation of today’s optoelectronic devices such as semiconductor lasers used in optical communication systems. Likewise, this class of materials is dominant in key high frequency electronics components for wireless communication such as mobile telephone systems.  The miscibility of binary III-Vs and the possibility to stack such layers of various compositions and doping levels (thus creating “heterostructures”) is crucial for all these applications. The tailoring of  heterostructure properties (often termed “bandstructure engineering”) is limited by the different lattice constants of the binary III-Vs, which limit the range of useful compositions and thereby the range of available band gaps. Thus, on the two most commonly used substrate materials, GaAs and InP, the band edges can be tailored to allow only a limited range of wavelengths of light emission, e.g. a maximum of about 1200nm for GaAs-based and about 2100nm for InP-based materials.  This means, for example that the technologically advantageous, rugged and inexpensive GaAs system could not be used to create vertical cavity surface emitting lasers (“VCSELs”) that emit at 1310nm, the ideal wavelength for metro-area optical communication systems. Likewise, InP-based structures are not suited for the wavelengths above 2100nm that are required for many gas sensing applications, as in combustion control. Moreover, the alignment of the band edges, which is highly important for the performance of devices, cannot be tailored by the combination of conventional materials at all.

These limitations can be greatly reduced by incorporating a few percent of nitrogen as a group V element into GaAs or InGaAs, i.e. by creating the so-called “dilute nitrides”. Unlike in all other cases, where a reduction in bandgap energy is achieved by inserting an element that increases the lattice constant, N effectuates this and at the same time reduces the lattice constant. Thus smaller bandgaps can be achieved and the unusual role of N in the lattice also allows a tailoring of band alignments. Both of these effects have opened up a new dimension of bandgap engineering. The success of this approach came as somewhat of a surprise since N forms a strong perturbation in the GaAs matrix material and was thought of as unsuitable for alloying. Rapid progress led to the demonstration of high quality 1300nm lasers on GaAs and eventually to the realisation of the first VCSELs that can be mass produced at low cost and emit at 1300nm. The business impact of this lies in the fact that it allows to extend inexpensive data transmission through optical fibers from the present range of about 300m to a distance of 10 to 20km and at the same time allows an increase of the data rate by about a factor of four. Thus it will enable metro-area data links which are presently considered to be the bottle neck for large scale optical communications and constitutes a very large market volume. Consequently, this success has spurred a large worldwide research interest into dilute nitrides. 
Within Europe many research groups are active in dilute nitrides and scientific excellence has been amply demonstrated so that European leadership in the topic of the NoE is within reach. However, with the exception of a few of the largest players, each group tends to focus on specialist topics within the areas of growth, characterisation, devices and theory/modelling. Over the last few years, informal collaborations have evolved organically, primarily based on supply of materials and devices, and availability of specialist measurement techniques and equipment. Within Europe these research groups, mostly members of DiNAMITe, are fairly successful in attracting funding from national agencies, but there is as yet little formal collaboration between the groups. It is the problems of fragmentation and lack of resources to tackle major research issues or application domains within the existing structure that motivates the NoE. The DiNAMITe consortium will aim to build collaborative activities and unleash the full European potential in dilute nitrides by exploiting the synergy in the national research activities. Without this collaboration European research in the subject will fall behind that in the USA and Japan where massive co-ordinated R&D programmes can be deployed. A particular strength of the DiNAMITe NoE is the direct industrial involvement of large companies (e.g. Infineon where 1.3 m VCSELs are already in production) and many SMEs, with the promise of delivery and commercialisation of real devices in the foreseeable future

At this point, a coordinated effort on the European level in the form of a Network of Excellence is highly desirable for the following reasons:
•		The sheer number of publications is presently increasing at a rate almost too fast to follow – of course in an uncoordinated way.
•		At the same time controversial issues on materials properties, theoretical understanding of the band structure and electronic properties, etc. abound.
•		An NoE could bring researchers from leading research groups together more effectively than any conference can and can do so repeatedly at time intervals determined by the progress of work rather than at given conference rhythms and locations.
•		Within the NoE, the most relevant and urgent questions for research can be condensed through discussions; consequently coordinated key action can be outlined. 
•		A coordinated proceeding between theoretical and experimental work can be instigated.
•		Rapid transfer of basic research work into device design, modelling and device fabrication will be possible.

An NoE will facilitate efficient sharing and development of expertise and facilities that have otherwise been rather scattered over different groups in Europe with only a limited access

At the present complexity of research, this cannot be achieved with optimum efficiency within the typical size of a consortium as e.g. “Optivan”, but a larger forum is necessary. Thus, the more established groups can work closely together, as some of them have been doing, but more and more new groups can be integrated to carry out more in-depth or more specialised research and to extend the work into new fields of applications. 

The proposed NoE brings together many groups in 50 institutions that have made key contributions to the field in the areas of research listed below. This is documented by a large number of refereed publications and numerous invited talks (on dilute nitrides by at least 30 participating groups!) at international conferences. The activities of the groups who brought forth these results will serve as an initial backbone to the NoE, and by sharing sample material, sample devices and know-how they will grant a high level of scientific quality from the very beginning. It is clear from the above analysis that if European advances in dilute nitrides are required, an integration initiative is essential. DiNAMITe will achieve this by achieving critical mass in expertise and resources needed to yield European leadership in the subject. This will be addressed via the structuring effect on the four scientific themes identified in four work-packages:  WP1:Growth of semiconductor materials and devices, WP2:Characterisation and physical properties, WP3: Devices & Device Integration, WP4: Theory and Modelling: 

The proposed NoE's main purpose lies in strengthening the European research scene on dilute nitrides by coordinating its efforts.  The objectives of the DiNAMITe NoE have been elaborated to achieve the maximum level of integration and spread the excellence in the field over the European IST research community. In doing so we aimed the following aims:

•	Establishing critical mass of researchers in four main disciplines that constitute to the technical work packages
•	Integrating of knowledge, equipment, man power and technical resources
•	Structuring European research activities for enhanced efficiency and more economical use of resources.
•	Defining key research challenges and initiating  joint research
•	Establishing strong links with industry to achieve world leadership in the innovative technologies based on dilute nitride research.
•	 Initiate, develop, coordinate and promote activities of spreading of excellence
•	 Develop and offer services to support SMEs in implementing the research output based on the network activities.

These aims will be achieved through the measurable objectives comprising:

•	Increased  number of European scientific workshops and conferences, and International workshops / conferences  lead by Euro Zone scientists in the field  
•	Increase in the collaborative work between the partners of the DiNAMITe Network  as a result of promotion and coordination of short and long term research visits to initiate the integration of disciplines
•	Increase in distribution of information and documentation of scientific data and material related to spreading of excellence and integrating activities
•	Increse in the availability & exchange of surplus equipment and sharing of materials and devices to promote joint research 
•	Establishment of  libraries of IP blocks 
•	Creation of new staff development programs incorporating equipment or skills
	training  and in-house training of researchers in a second discipline through short 	courses
•	Establishment of  lecturing tours by leading members of the consortium
•	Establishment of  a Euro-zone cross-institutional  masters program.
•	Creation of a “Virtual European Optoelectronics centre” 
•	Decrease the overlap of research in the Euro-zone

This diverse range of activities will ensure that a high level of excellence is rapidly established and maintained during and after the lifetime of the NoE.

LIST OF CONTRIBUTING RESEARCHERS

Company/Institution	Name /G	Post	
University of Essex	N. Balkan/M
M.J. Adams/M
B. K. Ridley/M
A. J. Vickers/M
A. Dyson/F
Yun Sun/F
Carl Hepburn/M
Marin Vaughan/M
S. Nicolas/M
2 Students/M	R
R
R
R
R
S
S
S
S
S	
Agilent Technologies, Torino, Italy	Daniele Bertone/M
M. Agresti/M
D. Soktani/M	R
R
R	
Akdeniz Univ. Antalya, Turkey	Bulent Ulug / M
Asiye Ulug / F
Mükremin Yilmaz / M	R
R
S	
Bilkent Univ. Ankara, Turkey	Atilla Aydınlı /M
Ceyhun Bulutay /M
Bilal Tanatar /M
Aykutlu Dana/M
Cem Sevik/M
Askin Kocabas/M
Levent Subasi/M
Dundar Yilmaz/M	R
R
R
R
S
S
S
S	
Cumhuriyet Univ. Sivas, Turkey	Yuksel Ergun / M
Huseyin Sarı/M
Sezai Elagoz/M
 Esin Kasapoglu/F
Emine Öztürk /F
Rana Amca /F
Arslan Türkoglu/M
 Metin Gunes / M
Ünal Yesilgul /M
Fatih Ungan /M
Ebru Senadım  /F
Alev Var /F	R
R
R
R
R
R
S
S
S
S
S
S	
Dokuz Eylul Univ. Izmir, Turkey	Ismail Sokmen/M
Kadir Akgungor/M
Umit Dogan/M
Umit Akinci/M
Aylin Yildiz/F
Serpil Sakiroglu/F	R
R
S
S
S
S	
VOID ((Late withdrawal)			
Helsinki Univ. of Technol, Finland	 Markku Sopanen  /M
Harri Lipsanen  /M
Kimmo Saarinen / M
Jonatan Slotte /M 
Jaakko Sormunen /M
Marco Mattila /M
Lauri Knuuttila /M
Juha Riikonen /M
Antti Säynätjoki / M
Karri Varis / M
Hannu Koskenvaara /M
Aapo Lankinen /M
Reino Aavikko/ M 
Sami Hautakangas /M
Antti Laakso /M
Antti Pelli /M
Ville Ranki /M
Mikko Rummukainen /M
Filip Tuomisto /M	R
R
R
R
S
S
S
S
S
S
S
S
S
S
S
S
S
S
S	
Imperial College, UK	Tim Jones/M
Gareth Parry/M
Ron Newman/M
David McPhail/M
Paul Stavrinou/M
Tomasz Krzyzewski /M
Mark Ashwin/M
Simon Barker/M
William McGee/M
Richard Foster/M	R
R
R
R
R
R
R
S
S
S	
Infineon , Muenchen, Germany	Henning Riechert / M
Robert Averbeck / M
Lutz Geelhaar / M
Christian Hanke/M
Harald Hedrich / M
Gert Jaschke / M
Oliver Schumann / M
Massimo Galluppi /M	R
R
R
R
R
R
S
S	
CNRS-INSA, Toulouse, France	X. Marie/M
Thierry Amand / M
Eric Vanelle / M
Hélène Carrere / F 
Anouar Jbeli / M
Mathieu Senes / M	R
R
R
R
S
S	
Istanbul Univ. Turkey	M.C. Arikan /M
N. Ercan/F
Gökhan Algün /M
Ayşe Erol /F
Metin Aslan /M
Fahri Donmez/M
Ersin Civan/M
Ahmet Kirsoy/M	R
R
R
R
S
S
S
S	
LAAS-CNRS, Toulouse, France	C. Fontaine /  F
G. almuncau/M
V. Bardinal/F
E. Bedel/F
S. Bonnefont/F
O. Gauthier-Lafaye/M
F. Lozes/F
B. Messant /M
Tobe named/M
To be named /M	R
R
R
R
R
R
R
S
S
S	
LPN-CNRS, Marcoussis, France	Jean-Christophe Harmand /M
Vincent Sallet /M
Gilles Patriarche /M
Frank Glas /M
Sophie Bouchoule /F
Denis Jahan /M
Mélanie  Le Dû /F
Anthony Martinez /M 	R
R
R
R
R
R
S
S	
Linkoping Univ. Sweden	Professor W. M. Chen /M
I. A. Buyanova/F
R.  Erladsson / M
N. T. Son / M
T. Mtchedlidze /M 
I.  Vorona / M
X. Luo /M
M. Izadifard /M
N. Q. Thinh /M	R
R
R
R
R
R
R
S
S	
Univ. Of App. Sciences, Munich, Germany	Hans C. Alt /M
To be named /M 
To be named/F	R
R
S	
Nanoplus, Gerbrunn, Germany	J. Koeth /M
To be named /M
To be named /M
To be named /M	R
R
R
S	
University of Marburg, Germany	Kerstin Volz /F
Peter J. Klar /M
Wolfgang Stolz /M
Jörg Heber /M
Torsten Meier /M
Stephan W. Koch /M
Wolfram Heimbrodt /M
Wolfgang Rühle /M
Bernadette Kunert /F
Siegfried Nau /M
Torsten Torunsk /M
Sebastian Borck /M
Kristian Hantke /M
Heiko Grüning /M
Martin Güngerich /M 
Jörg Teubert /M	R
R
R
R
R
R
R
R
S
S
S
S
S
S
S
S	
University Polytechnic of Madrid, Spain	Adrian Hierro/M
Enrique Calleja/M
Elias Muñoz/M
Alvaro Guzman/M
Jose M. Ulloa/M
J. Miguel-Sanchez/M
Esperanza Luna / F	R
R
R
R
S
S
S	
Royal Inst of Techno, Sweden	Mattias Hammar /M
Srinivasan Anand /M
Petrus Sundgren/M
Rickard M. von Würtemberg/M
Olivier Douheret/M	R
R
S
S
S	
Ruhr University, Bochum, Germany	Martin R. Hofmann /M
Nils Gerhardt /M
Stefan Hoffmann/M
Stephan Hövel/M	R
R
R
S	
University of Technology, Tampere, Finland	M. Pessa/M
Suvi Karirinne/F
Pirjo Leinonen/F
Tomi Jouhti/M
Tomi Leinonen/M
Antti Tukiainen/M
Lauri Toikkanen/M
E. Mihail Pavelescu/M
Mihail Dumitrescu/M
Mircea Guina/M
Teppo Hakkarainen/M
Wei Li/M
Changsi Peng/M
Anne Vainiopaa/F
Soile Suomakainen/F
Suvi Viitala/F
Jukka Vihariala/M
Janne Konttinen/M
Jari Lyytikainen/M
Antti Harkonen/M
Antti Isomaki/M
Lasse Orsila/M	R
R
R
R
R
R
R
R
R
R
R
R
R
S
S
S
S
S
S
S
S
S	
Technical Univ. Lodz, Poland	Wlodzimierz Nakwaski /M
Robert P. Sarzala /M
Pawel Mackowiak /M
Andrzej Brozi /M
Michal Wasiak /M
Tomasz Czyszanowski /M
Maciej Dems /M
Katarzyna Madeja /F
Artur Tomczyk /M
Piotr Mendla /M	R
R
R
R
S
S
S
S
S
S	
NIRDMP, Bucharest, Romania	C. Mihail TEODORESCU/M
Magdalena Lidia CIUREA/F
Dan MACOVEI/M
Mihai LAZARESCU/M
Dr. Adrian MANEA/M
Constantin LOGOFATU/M 
George FILOTI/M
Victor KUNCSER/M
Simona LAZANU/F
Petrica PALADE/F
Adrian LUNGU/M
Mihai DRAGHICI/M
 Lucian JDIRA/M	R
R
R
R
R
R
R
R
R
R
S
S
S	
VOID (Late withdrawal)			
Univ. of Montpellier, France	Thierry Taliercio /M
Bernard GIL  /M
Pierre Lefebre / M
Thierry BRETAGNON/M
Thierry GUILLET/M
Romuald INTARTAGLIA /M	R
R
R
R
R
S	
Univ. of Erlangen, Germany	H.P. Strunk /M
M. Albrecth/M
G. Front/M
S. Alderbegona/F
N. Nerding/F
M. Becker/M
G. Grazzi/F
H. Hormann/F
H. Mendel/F
T. Renimele/F	R
R
R
R
R
S
S
S
S
S	
Univ. of Athens, Greece	George Papaioannou /M
Maria Kalamiotou /F
Antonis Skountzos /M
Student/M	R
R
R
S	
Univ. of Aveiro, Portugal	Maria Celeste do Carmo/F 
António F. Cunha/M
Armando Neves/M
Teresa Monteiro/F
Rosário Correia/F
Sérgio Pereira /M	R
R
R
R
S
S	
Univ. of Bologna, Italy	Federico Boscherini/M
Francesco D’Acapito /M
R. Carboni /F
M. Malvestuto/M	R
R
S
S	
University of Bristol, UK	J. Rorison / F
1 Male Researcher
2 Female students
1 Male Student	R
R
S
S	
University of Cadiz, Spain	S. Molina / M
R. Garcia, / M
D. Gonzales/M
D. Aroujo / M
F J Pacheco/M
P. Villar/F 
J. Pizarro /M
E. Guerrero / F
P. Galindo/M
I. Turias/M
4 Male Students
2 Female Students	R
R
R
R
R
R
R
R
S
S 
S
S	
University of Karlsruhe, Germany	M. Hetterich / M
Jurana Kvietkova/F
Thorsten Passow/M
Andreas Grau/M
Kapil. C. Agarwal/M	R
R
R
S
S	
University of Liverpool, UK	P. Chalker /M
T. Bullough / M
T B Joyce/M
R.J. Potter / M
Mhairi Gass/F
3 Students /M?	R
R
R
R
R
S	
Univ. of Nottingham, UK	Amalia Patanè /F
Laurence Eaves/M
C. Thomas Foxon/M
Anthony Kent/M
Mohamed Henini/M
Sergei Novikov/M
Jordi Ibanez/M
Nicola Stanton/F
Eric Larkins/M
Ia n Harrison/M
Slawomir Sujecki/M
Rod Dykeman/M
Paul Brown/M
Mike Fay/M
James Endicott/M
David Fowler/M
Charles Martinez/M
Phil Bream/M
Steve Bull/M	R
R
R
R
R
R
R
R
R
R
R
R
R
R
S
S
S
S
S	
University of Paul- Sabatier, Toulouse, France	François Demangeot /M
Jean Frandon /M
Jesse Groenen /M
Georges Landa /M
Adnen Mlayah /M
Antoine Zwick /M
Guillaume Bachelier/M 
Claire Pinquier /F
Fanny Poinsotte /F
	R
R
R
R
R
R
S
S
S	
Univ. of ROMA, Italy	M. Capizzi/M
A. Polimeni/M
A. Frova/M
M. Felici/M
F. Masia /M	R
R
R
S
S	
University of Sheffield, UK	M. Hopkinson / M
J.P.R. David/M
J. Roberts/M
A. G. Cullis /M
G. Hill/ M
H-Y. Liu/M
J.S. Ng /F
M.J. Steer/M
A. Krysa/M
M. Gutierrez/F
K. Groom/M
P. Naveretti/M
W. M. Soong/M
L. Tan /M	R
R
R
R
R
R
R
R
R
R
R
S
S
S	
Univ. of Strathclyde, Glasgow, UK	Martin Dawson /M
Stephane Calvez /M
Handong Sun /M
John-Mark Hopkins /M
Anthony Clarke /M
Scott Smith /M
Nicolas Laurand /M	R
R
R
R
S
S
S	
Univ. of Surrey, Guildford, UK	A. R Adams/M
S. J. Sweeny/M
J. Allam/M
A.D. Andreev/M
D A Faux/M
TJC Hosea/M
D Lancefield/M
BN Murdin/M
T E Sale/M
CN Ahmad/M
R Fehse/M
K Hild/F
S R Jin/M
G Knowles/M
I Marko/M
D Lock/M
 D Mc Conville/M
 G Strudwick/M	R
R
R
R
R
R
R
R
R
R
R
R
R
R
R
S
S
S	
Univ. of Warwick, UK	C.F. McConville / M
G. Bell/M
T.D. Veal / /M
Mr. I. Maboob / M
Mr. L. Piper / M	R
R
R
S
S	
NMRC, Cork, Ireland	E. O’Reilly/M
A. Lindsay/M
S. Healy/F
S. Fahy/M
M. Pereira/M
B. Roycroft/M
C. Kelleher/F
B. Corbett/M
C. Perceival/M
J. Justice/M
D. Williams/M
C. Harris/M	R
R
R
R
R
R
R
R
R
R
S
S	
Wroclaw Univ. of Technol. Poland	Grzegorz Sek / M
Piotr Sitarek / M
Krzysztof Ryczko / M
Leszek Bryja / M
Jan Misiewicz / M
Robert Kudrawiec / M
Artur Podhorodecki / M
Wojciech Rudno-Rudzinski / M
Magdalena Utko / F	R
R
R
R
R
S
S
S
S	
Intexys, Labege, France	Dr. J. Ch. Garcia / M
Dr Renaud Stevens/M
Cyrille Rossat/M	R
R
R	
Comlase NT AB, Stockholm, Sweden	Dr. C. Silfvenius / M
A. Feitsch/M
C. Lindstrom/M
P. Blixt/M
1 male student	R
R
R
R
S	
Sacher Lasertechnik GmbH, Marburg, Germany                     	J. Sacher/ M
G. Adamkiewicz/F
S. Stry/F
G. Breidenstein/F
L. Hildebrandt/M
R. Knispel/M	R
R
R
S
S
S	
EPICHEM ltd. Wirral, UK	L. Smith / F
S. Rushworth /M
R. Odedra/M
A. Kingsley/M
H. Davies/F
P. Williams/M
T. Leeadham/M
K. Coward/F
M. Ravetz/F
I. Stevens/M
T. Leese/M
A. Purdie/M
E. Mc Kinnell/F
P. Jacobs/M
J. D. Robinson/M	R
R
R
R
R
R
R
R
R
S
S
S
S
S
S	
VOID ((Late withdrawal)			
CRHEA/CNRS, France	Benjamin Damilano /M
Jean-Yves Duboz /M
Julien Barjon /M
Jean Massies/M	R
R
R
R	
Faculte des Sciences de Monastir	H. Maaref / M
M A Maaref/M
F. Hassen/M
L. Sfaxi/M
L. Bouzaiene/M
H. Sghaier/M
R. Ajjel/M
B. Ilahi/M
F. Saidi/M
S. Rekaya/F
M. Gassoumi/M	R
R
R
R
R
R
R
S
S
S
S	

B.2 Relevance to the objectives of the IST Priority

The propsed programme of NoE entitled “Dilute Nitride-Arsenide-Materials for Innovative
Technologies” (DiNAMITe) addresses the strategic objective 2.3.2.2 “Optical, opto-electronic, and photonic functional components” in the second call of the IST Priority (FP6/2003/IST/2). 

It is designed to strengthen scientific and technological excellence of European research and is concerned with the following major issues listed in the IST objectives

•	“networking together the critical mass of resources;
•	“networking the expertise needed to provide European leadership; 
•	It will “spread excellence beyond the boundaries of its partnership”
•	It will also “contribute directly to European policies for the knowledge society and the e-Europe Action Plan”

 “In order to ensure concentration of effort and critical mass…” the project is “ focussed on the set of Strategic Objectives to mobilise researchers Europe-wide and bring together the effort necessary to address the relevant challenges” DiNAMITe activities are dirctly relevant to New Technology components as identified in the following  Strategic Objective of the IST programme: “To reinforce European strengths in areas where it has established industrial and technology leadership…”

DiNAMITe focuses on new “advanced semiconductor compounds” with a wide range of  “applications in advanced solid-state light sources to increase compactness, tunability and brightness ultra-short pulse, microcavities and source array technologies”  

DiNAMNITe NoE aims at  encompassing the full device potential of novel and exciting family of metastable semiconductors, including III-N-As, III-N-P and III-N-Sb materials and covering specific alloys including the following, whose approximate bandgap wavelength ranges are shown in brackets: InNP/InP (0.9 - 1.0 m), InNAs/InGaAs/InP (2 - 3 m), GaInNP/GaAs (0.7 - 0.85 m), GaAsN/GaAs (0.85 - 1.2 m), GaInNAs/GaAs (1.2 - 1.6 m), InGaAsN/InGaAsP/InP (1.2 - 2 m)  ,  GaPN/GaP (0.6 - 0.7 m), and InNSb/GaAs (10 - 15 m). Based on this wide range of available wavelengths Many applications in areas listed in the IST objectives “medicine, environmental sensing and communications” can be addressed.

In addition to EELs and SOAs, Vertical Cavity Surface-Emitting Lasers (VCSELs), Vertical External Cavity Surface-Emitting Lasers (VECSELs), Vertical Cavity Semiconductor Optical Amplifiers (VCSOAs), and Semiconductor Saturable Absorber Mirrors (SESAMs) are of increasing importance for the Specific objectives within the of the IST programme 2.3.2.2 Optical, opto-electronic, and photonic functional components domain :  “the development of advanced materials… micro, solid-state sources and …optoelectronic integrated circuits (OEIC)…” 

DiNAMITe also addresses “research challenges..in… telecommunication and infotainment (components for “low-cost high-bandwidth” and “Terabyte storage”), …….and “Environment and Security” (photonic sensors and imagers)” 

Finally DiNAMITe aims at achieving world leadership in the field through integration, joint activities and spreading excellene in the European Research Area (ERA) as well as aiming to “increase innovation and competitiveness in European businesses and industry and to contribute to greater benefits for all European citizens” 

B.3 Potential impact

3.1 Current status

Research in dilute nitrides for applications in electronics and photonics is currently a very hot topic worldwide. The potential of these materials for novel devices with enhanced performance and novel functionality is internationally recognised. Thus the DiNAMITe NoE focuses on a scientific area that is of high strategic importance for the development of European technological capability. In the short/medium term the development of optoelectronic devices in the 1.3 – 1.55 mm window is important for data communications. Although the telecommunications sector is currently operating in very difficult economic circumstances, it is widely accepted within the industry that optical communications remains the way forward and so interest in, and support for, work on new devices and materials is still very strong. Looking further ahead there are far-reaching and potentially extremely important application areas for dilute nitrides in many other fields, for example THz devices for sensing and medicine, optoelectronic integrated circuits (OEICs) for signal processing and defence, and the development of III-V materials grown on silicon with the promise of further electronic/photonic integration. From the scientific point of view, new knowledge on this previously unexplored class of highly mismatched semiconductors is also of great value. So the topic has a dynamic life span with an immediate device requirement as well as the need for a durable integration.

 Within Europe many research groups are active in dilute nitrides and scientific excellence has been amply demonstrated so that European leadership in the topic of the NoE is within reach. However, with the exception of a few of the largest players, each group tends to focus on specialist topics within the areas of growth, characterisation, devices and theory/modelling. Over the last few years, informal collaborations have evolved organically, primarily based on supply of materials and devices, and availability of specialist measurement techniques and equipment. Within Europe these research groups, mostly members of DiNAMITe, are fairly successful in attracting funding from national agencies, but there is as yet little formal collaboration between the groups. It is the problems of fragmentation and lack of resources to tackle major research issues or application domains within the existing structure that motivates the NoE. The DiNAMITe consortium will aim to build collaborative activities and unleash the full European potential in dilute nitrides by exploiting the synergy in the national research activities. Without this collaboration European research in the subject will fall behind that in the USA and Japan where massive co-ordinated R&D programmes can be deployed. A particular strength of the DiNAMITe NoE is the direct industrial involvement of large companies (e.g. Infineon where 1.3 mm VCSELs are already in production) and many SMEs, with the promise of delivery and commercialisation of real devices in the foreseeable future

3.2 Impact and structuring effect of DiNAMITe

It is clear from the above analysis that if European advances in dilute nitrides are required, an integration initiative is essential. DiNAMITe will achieve this by achieving critical mass in expertise and resources needed to yield European leadership in the subject. This will be addressed via the structuring effect on the four scientific themes identified in the work-packages, as discussed in turn below.

3.2.1 Growth and materials development
This activity underpins the other work-packages, but also requires inputs from them in order to maximise the impact, as illustrated schematically in Fig. 3.1. For example, input on device structures and target specifications is required by growers, as is the feedback on materials characterisation. There is also an important role for theory and modelling in terms of assessing the trends of behaviour when materials parameters are varied and in arriving at design rules. Only when all these inputs are in place can the full potential of optimised growth be achieved, as illustrated by the linkages of Fig. 3.1. The impact of these many collaborative activities will be an understanding of the physical limitations for growth, as well as of the long-wavelength limit for dilute nitride optoelectronic devices grown on GaAs substrates. This will lead to realisation of the concept of “engineered” material for specific device requirements.

Test structures,  Target specs for wavelength, gain, mobility, radiative efficiency,…

Materials & Phys. Char.

Devices & Integration

Theory & Modelling

Composition, Spectroscopy, Transport, Defects, Annealing,…

Band structures, Target  structures and compositions, Parameter trends, Design rules,

Growth & Mats. Dev.

Impact
>Engineered material
>Long-wavelength limit (GaAs substrate)
>Understanding of physical limitations

>Optimised structures

Figure 3.1 Structuring effect on growth and materials development

3.2.2 Materials and physical characterisation
Figure 3.2 illustrates the linkages for the materials and physical characterisation activity in DiNAMITe. The objectives here are to achieve a full understanding of the role of Nitrogen incorporation on the electronic and optical properties of the dilute nitrides. Again this will only be achieved by the inputs from the complementary activities in growth, devices, and theory and modelling, as illustrated in the Figure. Key aspects here include the tests of theoretical predictions, as well as the requirements for growth of specific test structures, including thick layers to enable characterisation measurements to be made. Without the degree of collaboration envisaged in DiNAMITe, it is not possible for the required advances to happen. 

Target specs for materials, compositions, structures, and physical props.

Growth & Mats. Dev.

Devices & Integration

Theory & Modelling

Thick layers, QWs & strain, Comparison of MBE/MOVPE, Dopants,….

Optical properties, Electronic props.,
Rad. & non-rad. mechanisms, Predictions to test

Materials & Phys. Char.

Impact 
> Understanding of N incorporation effects, hydrogenation, interdiffusion,….
>Optimisation of materials/processing
>Key knowledge on highly mismatched semiconductors

 

Figure 3.2 Structuring effect on materials and physical characterisation

3.2.3 Devices and integration
The devices and integration activity is the one of key importance to the industrial players and represents the primary route to commercial exploitation for the DiNAMITe project. Edge-emitting and surface-emitting lasers for applications in telecommunications and data communications are the main commercial product utilising the dilute nitrides at present. However, in the future it is widely predicted that optical amplifiers, modulators, photodiodes and other devices based on the dilute nitrides will also be marketed, since the advantages in terms of enhanced performance and use of large-area GaAs substrates are very attractive. Fig. 3.4 shows the linkages with other work-packages; it is clear that the device	activity is strongly dependent on growth, characterisation and theory/modelling for achievement of its objectives. Further ahead lies the exciting prospect of optoelectronic and photonic integration, where the GaAs substrate again offers significant advantages and many stimulating
technical challenges can be anticipated.

“Engineered materials”, Optimised device structures, 
GaAs substrates

Materials & Phys. Char.

Growth & Mats. Dev.

Theory & Modelling

Radiative and non-radiative recombination, Carrier dynamics

Band structures, Optical properties, Electrical props., Device designs, Simulation

Devices & Integration

Impact
>EELs, SOAs, VCSELs, VCSOAs, SESAMs, RCEPDs, QWIPs, modulators
>Optimised devices 
> OEICs, PICs

Figure 3.3 Structuring effect on devices and integration

3.2.4  Theory and Modelling
It is hard to overstate the value of fundamental theoretical studies and simulation in the DiNAMITe consortium. It is this route that will enable device design to be optimised with confidence in the predictive ability of the models developed. However, this will only be possible with appropriate inputs from the other work-packages in the collaboration, as shown in Fig. 3.3. Device and material specifications, and measurements of key parameters will feed into the theory and modelling in order to ensure a close match of theory and practice, and that the models developed are “fit for purpose”. It is important that the simulation tools should be neither over-simplified nor unnecessarily sophisticated if they are	to be accepted and widely used by the community. Indeed as the work in this theme progresses there may be scope for commercialisation of some of the software developed, since the need for comprehensive device modelling and simulation is now widely recognised, and the DiNAMITe partners will be alert to such possibilities.

Thick layers, 
QWs + strain
In-situ charact., 2D/3D growth, Dopants

Materials & Phys. Char.

Growth & Mats. Dev.

Devices & Integration

Composition, Spectroscopy,   Transport, Defects, Annealing,… 

EELs, VCSELs, SOAs, VCSOAs, modulators, RCEPDs, QWIPs, SESAMS,…

Theory & Modelling

Impact
>Predictive models,
>Design rules, 
>Device designs,
>Optimisation of materials/devices for specific functionality

Figure 3.4 Structuring effect on theory and modelling

3.3 Spreading excellence

Within the “spreading excellence” work package we intend to increase cross-disciplinary skills within the DiNAMITe consortium. Thus specialists in each of the four scientific work-package themes (growth, characterisation, devices and theory/modelling) will be encouraged to develop skills in one or more of the other themes. We will achieve this by a managed programme of training, exchange of researchers, dissemination and day-to-day interactions with peers. Specifically it is planned to:
•	establish a dedicated interactive web-site with information about (and links to) partner groups, information about conferences/workshops/symposia (both within the network and worldwide), list of potential host groups for short visits/training, partners looking for short term training, information about steering committee meetings, forthcoming activities, device/sample exchange, etc.
•	establish a separate web-site to provide information about the NoE research activities for the general public 
•	establish a “travelling theses library” so that copies of recent PhD and MSc theses in the NoE can be borrowed by member groups
•	organise various training opportunities, such as industrial workshops, regular short term courses at selected centres, summer schools, extended visits and hands-on training of technicians and students at selected centres of excellence within the network
•	set up a European Masters MSc programme (with lecturers from the NoE and students from both NoE and outside EU)
•	establish joint PhD supervision/ programmes (for work carried out at two centres) 
•	organise equipment aid so that surplus equipment from more advanced laboratories can be supplied to less developed laboratories to help in-house research and training
•	organise lecture tours by prominent researchers from the NoE in partner countries
•	encourage the publication of Special Issues in relevant journals
•	organise International Conferences (bi-annual) and Workshops (annual) with publication of proceedings in scientific journals
•	foster links with other relevant EU programmes, e.g. COST 288
•	seek to enable members to have access to better equipped libraries within the NoE
•	organise special meetings between academics and SMEs to speed up exploitation of technological innovation
•	organise special PhD student conferences (by students and for students) in order to help to maintain and strengthen future scientific collaboration in Europe
•	organise joint workshops with other NoEs with the FP6 programme on inter-disciplinary areas

This diverse range of activities will ensure that a high level of excellence is rapidly established and maintained during and after the lifetime of the NoE.

3.4 Durability

The objective will be to ensure that the range of activities of the NoE continues to grow and develop after the formal ending of the project. This will be achieved by a number of means as discussed below.

The level of industrial support and interest that the DiNAMITe consortium has attracted suggests that there is a need for the activities that are planned. Commercialisation of equipment and components based on dilute nitrides is very close, and in fact Infineon (DiNAMITe member) has recently announced the world’s first 4 Gb/s fibre channel transceivers based on vertical cavity surface-emitting lasers (VCSELs) operating at 1.3 microns. It is therefore likely that the expertise and skill-base of the consortium will be in demand for associated activities such as production, marketing and product support, in addition to the R&D activities already in progress. This will in turn ensure that the DiNAMITe consortium is a prime contender for significant industrial support in the future.

One of the most important activities with DiNAMITe is the development of modelling software, and it is likely that significant IP can be generated by this means. It is intended to market the software developed and/or to license the associated IP, thus providing an income stream for further collaborative research, and ensuring the durability of the re-structuring brought about by the NoE. Our aim is that the industrial partners in the NoE will have access to skills and developments whilst at the same time the interests of academic partners and the future of the network are adequately protected.

Durability of the impact of DiNAMITe is further supported by the existence of the key technical hubs, which will become widely recognised as centres where significant equipment resources and/or expertise are located. This function need not only apply to research and development but can apply equally to training and education in relevant disciplines. The vision here is for the hubs to become centres where services and resources are available at commercial rates to the industrial and academic community, thus ensuring a continued existence after the formal end of the NoE.

Finally, our long-term objective is to establish a “European Centre for Optoelectronic Materials, Devices and Systems Research” for continuation and development of the NoE activities. In this context we are keen to broaden the technical scope of DiNAMITe to include the full range of optoelectronic materials and devices as well as their applications, as implied by the proposed title for the Centre. Clearly this will be a virtual Centre but it is likely that its main activities will be located at one or more of the hubs as they grow and progress during the lifetime of the NoE. In addition to the specific resourcing possibilities discussed above, this development will also necessitate a search for long-term funding or self-funding options for the Centre, and this will form a challenge for the later years of the consortium.

B.4. Degree of Integration and Joint Programme Activities

The Integration and Joint Programme Activities of the DiNAMITe NoE have been elaborated to achieve the maximum level of integration and spread the excellence in the field over the European IST research community. In doing so we aimed the following objectives:

•	Establishing critical mass of researchers in four main disciplines that constitute to the technical work packages
•	Integrating of knowledge, equipment, man power and technical resources
•	Structuring European research activities for enhanced efficiency and more economical use of resources.
•	Defining key research challenges and initiating  joint research
•	Establishing strong links with industry to achieve world leadership in the innovative technologies based on dilute nitride research.
•	 Initiate, develop, coordinate and promote activities of spreading of excellence
•	 Develop and offer services to support SMEs in implementing the research output based on the network activities.

These objectives will be achieved through the activities described in detail in the following paragraphs of section B4. The main activities comprise:

•	Regular “brainstorming” meetings involving the chairpersons of the clusters to discuss the generic issues for further advancement and to address the challenges in the field
•	Annual scientific workshops involving the chairpersons of the work packages.
•	 Annual scientific meetings involving all participants 
•	Integration, distribution of information and exchange of surplus equipment o support researchers’ experimental work.
•	Development, distribution and documentation of scientific data and material related to spreading of excellence and integrating activities. 
•	Sharing of materials and devices to promote joint research 
•	Establishing libraries of IP blocks
•	Promotion of  collaborative research studies, across clusters to achieve the technical 	objectives 
•	Promotion and coordination of short and long term research visits to initiate the 	integration of disciplines. 
•	Establish new staff development programs incorporating equipment or skills training
•	Promotion of  in-house training of researchers in a second discipline through short 	courses
•	Making available to researchers equipment in host institutions otherwise not available 	within the home institution
•	Organization of  lecturing tours by leading members of the consortium
•	Initiation and development of  a Euro-zone cross-institutional  masters program  and  its coordination.
•	Preparation of training material for new students and technicians.
•	Initiation of short courses and preparation of modules and publication of material for short industrial courses for academic researchers and PhD students.

 B. 4.1 Integrating Activities

Integrating activities are organized into work packages that aim to integrate the partner groups to achieve critical mass and establish strong inter- cluster links for achieving high quality multidisciplinary research and overall excellence. Integrating Activities within the DiNAMITE  NoE  there are four technical work packages:

WP1:	 		Growth of semiconductor materials and devices 
WP2:		Characterisation and physical properties;
WP3:		Devices & Device Integration and;
WP4:		Theory and Modelling 

WP1 Growth of semiconductor materials and devices

1. Relevance of the work package

Dilute nitrides have emerged from conventional III-V semiconductors such as GaAs or InP by the insertion of nitrogen into the group V sublattice, thus creating alloys such as GaAsN or InPN. Only a few years ago, it was found that even a low nitrogen content of only a few percent has profound influence on the electronic properties of these materials and allows a widely extended band structure engineering. To illustrate this we take the example of InGaAs, the most widely employed GaAs-based alloy material for the active regions of optoelectronic devices, and compare it with InGaAsN, the dilute nitride alloy derived from it.

The minimum bandgap of InGaAs/GaAs quantum wells (QWs) can be reduced from about 1.05 eV to as little as 0.75 eV in InGaAsN/GaAs (QWs). Thus both 1.3µm and 1.55µm, the two most important wavelengths for fiber-optical communications can now be reached with GaAs-based materials.

The most notable result from this is the first fabrication-friendly realisation of 1.3µm vertical cavity surface-emitting lasers (VCSELs). These devices allow the extension of low-cost optical data transmission from distances of 300m to over 10km.

It should be noted that this technological breakthrough was entirely materials-driven, since it  only relied on replacing the InGaAs active region by the dilute nitride alloy InGaAsN.  In a similar way, the proposed materials growth activities are expected to enable further, entirely novel device applications on the field of light emission, detection (including solar cells), gas sensing and others. WP1 will be central to the device activities in WP3, by both demonstrating the feasibility of novel material structures and by safeguarding that these can be realised in sufficient quality. This will require a wide interaction with WPs 2 (characterisation) and 3 (theory) as well, making it an important integrating factor for a multitude of European research groups.

2. Overall goals of the work package 

This section states the goals of WP1 in a rather abstract fashion in order to illustrate the scientific strategy. In the following section we outline the growth activities in the form of systematically connected tasks. The main goals of WP1 are:

•	to push the long-wavelength limit of GaAs-based materials as far as possible, i.e. to reach the longest wavelengths / the smallest band gap energy possible from a structure that can be monolithically grown on GaAs.
•	to test and to compare different routes to reach long wavelengths (QWs, QDots, different alloys …)
•	to reach an understanding of the physical mechanisms which are responsible for the lower limit of band gap energy. This is both an issue of the ideally obtainable bandstructure (which is closely related with theory, WP4) and of practical limits imposed by the typically observed degradation of “material quality”  with increasing wavelengths (which is most obvious in a reduced luminescence efficiency, but so far could not be attributed to any physical mechanism).
•	to reach an understanding of the physical mechanisms limiting “material quality” in dilute nitrides as compared to N-free materials. These are expected to depend on many factors such as band gap, composition, strain etc..  
•	to specifically study the influence of growth conditions on these limits. This should eventually result in a differentiation between intrinsic and extrinsic limitations for the attainable wavelengths in structures of given design. Moreover, the clarification of this issue will be of central importance for achieving optimum material quality and optimised devices.
•	to reach an “engineering of band-offsets” by creating heterostructures from different alloys / differently strained layers etc.. Due to the strong influence of nitrogen incorporation on heterostructure band offsets, this is a unique feature of dilute nitrides, which so far remains almost unexplored, but is of major importance for any device application.
•	to perform similar studies for InP-based (and possibly for others, such as InAs- or GaSb-based) materials.
It should be pointed out that this WP is also dedicated to provide material as specified by colleagues in other WPs. In this role, WP1 acts as a major link between all of the WPs of this project. In particular, WP1 will
•	provide structures as needed to compare experiment and theory (e.g. for the investigation of band structure, WP3)
•	provide specific structures for physical characterisation experiments (to correlate materials growth, physical properties and theory, i.e. WPs 1,2 and 4)
•	develop and provide optimised device structures (for WP3).

Figure 4.1 shows schematically the integration challenges and cluster vision of WP1.

WP1:  Growth of Semiconductor Materials and Devices

WP3: Devices & Device integration

WP4: Theory and Modelling

WP2: Characterization of Physical Properties

WP5: Spreading Excellence

Coordinated activities of Growth Centers and associated Hubs

Vision: Achieve the goals in growth of novel materials and structures
Provide materials and Devices
Contribute to Spreading of excellence activities

Figure 4.1 the integration challenges and cluster vision of WP

3.   Growth issues in detail

3.1 Structuring of growth activities between groups

The growth activities of WP1 will be carried out in many laboratories. Among these, so-called “growth-centers” in groups with well-proven expertise in the growth of dilute nitrides will play a prominent role. These centres with core skills in growth and fabrication are listed below

Institute	Status	Skills / Growth Facilities	
Imperial College	Core Partner	MBE growth of GaInNAs.	
Infineon	HUB / Core Partner / Chair of WP1 / 
Chair of Industrial Advisory Board 	MBE growth (2 machines),	
LAAS	HUB / Core Partner	MBE growth Ga(In)AsN/GaAs (111) quantum structures GaInAsN/GaAs (100) quantum structures	
LPN	Core Partner	3 MBEs, 1 MOCVD growth of III-V-N on GaAs (GaNAs, GaInNAs, GaNAsSb, GaInNAsSb)	
Madrid	Core Partner	MBE Technology (RIBER 32 + MECA 2000 both with RF plasma sources, dedicated to nitrides and arsenides/dilute nitrides, respectively). Processing (Optical and electron lithography, RIE, RTA, UHV metallization, Sputtering, Plasma CVD	
Nottingham	Core Partner		
Sheffield	HUB / Core Partner	Materials growth (MBE and MOCVD) including  GaAsN, InGaAsN and InAsN, structural characterization using  XRD, TEM, AFM	
Tampere	HUB / Core Partner	5 commercial MBE systems for
epitaxial growth
Complete in-house optoelectronic
device process facilities
	
Marburg	HUB / Core Partner	Two MOVPE reactors with facilities for structural characterisation (XRD, AFM, TEM, SEM)	
Linkoping	HUB / Core Partner / Chair of WP5	2 sublimation growth reactors and 1 hot
wall CVD reactor for SiC, 
2 HVPE systems for III-N, 
1 hot wall MOVPE system for III-N
presently used for GaN and AlN, 
1 reactive sputtering system for III-N.
	
Helsinki	HUB / Core Partner	Ga(In)NAs growth by atmospheric
MOVPE, high-content GaAsN, growth by low-pressure vertical3*2”. MOVPE,	
Royal Institue of Technology	Core Partner	MOVPE growth and properties of GaInNAs QWs	
Liverpool	Core Partner	Measurements Growth of GaInNAs and GaAsN by MBE and MOMBE; in-situ monitoring of growth by optical
reflectivity and reflection anisotropy  spectroscopic ellipsometry	

Each of the centers has longstanding expertise in III-V growth and has demonstrated by publications, invited talks etc that it has a leading role in the growth of dilute nitrides worldwide. The groups which will act as dedicated HUBs will be the nerve centers for growth that will provide the materials and devices and training for partners in other technical clusters.

The growth centers will at first among them align their calibrations of compositions, material quality etc. through a series of “round robins” with simple and typical layer structures. Such samples and all further work based on them will give a solid foundation to all activities in the project. Furthermore, these calibration samples will aid new groups in assessing the quality of their own samples. This is, in fact, a very practical way of spreading excellence between all participation growth groups and of cross-linking many labs within the European research arena. Moreover, this quality cross-check is essential when one of the “newcomer” groups embarks on a novel approach that aims at improving material quality in a certain way.

3.2 Systematics of growth activities 

At the time of writing the DiNAMITe proposal, the following systematic appears most suited. If necessary, this will have to be revised by the WP1 leaders in conjunction with the steering committee.

3.2.1	Growth of different types of structures – hierarchy of complexity:

•	Grow of materials lattice-matched to GaAs for investigation of thick and strain-free layers (InGaAsN, InGaAsNSb, …). These are required for many baseline studies such as of bandstructure, electrical properties or generally where thin layers such as quantum wells are insufficient. This may in particular hold for studies to detect and identify defects.
•	Similarly, growth of thick layers with well-defined, low strain, e.g. to quantify the effect of strain on material properties
•	Growth of QWs or other heterostructures of increasingly complex structure with
	well-defined strain in the individual layers :	
	InGaAsN/GaAs
	InGaAsN/GaAsN/GaAs, with and without strain compensation by the GaAsN 		layers
	as above, but with strain-mediating interlayers (i.e. layers with intermediate 		strain)
	nGaAsSbN/GaAs etc.
	In(Ga)As(N) QWs with InAs- (or more generally InGaAsN-) QDotsembedded in 
	them

•	Growth of BGaAs, BInGaAs, etc to study in how far B can be used for compensation of compressive strain. If successful, the route given in the steps above will be followed.
•	Growth studies for InP-based (and possibly for others, such as InAs- or GaSb-based) materials will be carried out in an analogous fashion. To avoid undue fragmentation, these activities will have to be directed and coordinated by the leaders of WP1.

3.2.2	Investigations into issues of growth technology and growth conditions

•	Growth of nominally identical structures by MBE and MOVPE for detailed comparison with respect to materials properties and qualities like luminescence efficiency
•	MOVPE growth: use different N-precursors, carrier gases etc. to study efficiency of nitrogen incorporation, materials quality etc.
•	MBE growth: study the use of different plasma sources as well as plasma operating conditions to study their effect on the efficiency of nitrogen incorporation, materials quality etc.
•	Basic studies of growth of dilute nitrides by in-situ-characterisation (RHEED, RDS, STM …) in both MBE and MOVPE. The findings of these techniques are to be correlated with results from physical characterisation to correlate growth modes etc. with physical material properties such as luminescence efficiency, defect concentration etc. .
•	In particular, the above-mentioned in-situ techniques will be used to specifically investigate the following issues (all under various growth conditions such as growth temperature, group V to group III ratio, …) which are expected to have a major impact on material quality:
•	transition between two dimensional and three dimensional growth mode 
•	alloy non-uniformity, 
•	surfactant effects of Sb or other possible surfactants (to be proposed by theory)

•	Employ atomic-layer-type growth modes such as MEE, ALE, which might be more suited to the typically used low-temperature growth of dilute nitrides than continuous growth. Due to the large effects of strain at the growing surface, these techniques might also have influence on local bonding configuration and/or alloy non-uniformity.
•	Growth studies on differently oriented substrates (111)A, (111)B, non-polar surfaces etc. Here it is of primary interest to study possible differences of nitrogen incorporation, defect formation, formation of alloy non-uniformities etc. between these surfaces. In comparison with theory, this is expected to lead to a greatly improved theoretical understanding of the growth of dilute nitrides.

3.2.3	Growth activities related to processing and device structures

A large body of work will be dedicated to transfer the above-mentioned per-se growth studies into device application. This is highly desirable from an economic point of view. At the same time the application of growth routines in device structures very often serves as the most stringent, and often the only quantifiable measure of “material quality”. These activities will encompass the following:
•	Doping studies with different dopants (Be, C, Si, Te) to study electrical properties and interaction of dopants with N. This important field has received very little attention so far and clearly calls for action, otherwise electronic devices based on dilute nitrides will not be achievable.
•	The growth of device structures as specified by work-package WP3 (devices). Associated with this, the growth of simple test-structures with identical “active regions” as needed for physical characterisation tasks (WP2). 
Only the correlation between device performance and physical properties will allow the development of strategies for a fast, device-relevant material characterisation.

•	An entirely separate field of work is the investigation of annealing routines. This is required since the dilute nitrides – unlike most other semiconductor materials – are very susceptible to thermal treatment. Such routines will have to be carried out comparatively for fixed types of heterostructures (thick layers (strain-free, tensile, compressively strained), QWs, composite QWs)
Annealing routines to be employed are: conventional slow anneal, RTA (rapid thermal anneal), use of different atmospheres etc. After anneal, the created samples will have to undergo physical characterisation in experiments detecting changes in local bonding, QW interdiffusion, changes in defect level or defect character etc. All these experiments require close collaboration with WP2 (characterisation), and further on in the project, also with WP3 (devices).

Performance indicators for WP1 Growth of semiconductor materials and devices

Integration	Indicators 	
Within clusters	- Achievement of joint goals for systematic Growth activities
-Achieving the objectives for investigations into issues of growth technology and growth conditions 
-  Achievement of joint goals for growth activities related to processing and device structures
- Joint Publications
- Joint contracts, training, exchange of students and researchers, exchange of material
	
Between clusters 	-Availability of Materials and Devices
- Exchange of ideas results, feed back:  theory/ modelling/ device performance etc.
-Inter-cluster Joint Publications
- Inter-cluster training, 
- Joint contracts, training, exchange of students and researchers, exchange of material collaborative research studies, across clusters to achieve the technical objectives 
- Coordination  integration of disciplines. 
- New staff development programs incorporating equipment or skills training	

WP2.  Characterisation and physical properties

(Ga,In)(As,N) and related alloys have focused much attention due to their promising applications. Replacing only a few percent of the arsenic atoms by nitrogen reduces the band gap in these materials by up to several hundred meV. This opens the possibility of optoelectronics devices based on GaAs at the technologically important wavelength of 1.3 and 1.5 µm as well as the design of efficient solar cells and sensors for environmental purposes (c.f. WP3). The fact that GaNP and related alloys can be grown lattice-matched on Si substrates has offered intriguing new possibilities of OEIC and integration of efficient III-V optoelectronic devices with the main-stream microelectronics based on Si. Despite their promising applications and the first encouraging experimental results, very little is known about the physical properties of such alloys. For instance 
•	the difficulty of incorporating nitrogen into GaInAs while maintaining good optical quality has provoked much work to establish an understanding of the underlying factors determining the optical quality of GaInNAs, such as composition, growth and annealing conditions
•	we are still far from establishing an understanding of the band structure and its dependence on composition.
•	fundamental electronic interactions such as electron-electron and electron-phonon scattering, dependence of effective mass on composition, strain and orientation, quantum confinement effects, effects of localised nitrogen states on high field transport and on galvanometric properties, and mechanisms for light emission in these materials, are yet to be fully understood. 
•	Nature and formation mechanisms of grown-in and processing-induced defects that are important for materials quality and device performance are still unknown. Such knowledge is required in order to design strategies to efficiently control and eliminate harmful defects.

A solid material characterisation basis is thus essential for successfully addressing the proposed tasks in this project. The workpackage WP2 aims at a detailed understanding of the physical properties of the grown dilute nitride structures : (In)GaAsN, InSbN, (Ga,In,Al)NP epitaxial layers; (In)GaAsN/GaAs(N), InGaAsN/InP, GaAsNSe/GaAs, GaInAsNSb/GaAs quantum wells; InGaAsN quantum dots. 

For such an understanding a close collaboration of fabrication, characterisation techniques and theoretical modelling is a prerequisite (figure 4.2). To exploit synergy effects, the samples will be systematically distributed among the involved partners.
All the experimental characterisations (structural, optical and electrical) will be performed in order :
•	to measure the detailed characteristics of the grown materials (size, composition, strain…) with an efficient feedback with WP1 (growth) and WP4 (theory).
•	to get a good understanding of the role of N incorporation on electronic and optical properties in order to optimise the performances of the devices (WP3).
•	to obtain a solid knowledge base on physical properties of dilute nitrides and their implications on highly mismatched semiconductors in general, such that the great potential of this new and previously unexploited class of electronic materials can be fully exposed and explored for applications in microelectronics and photonics.

Growth                Band structure            Device            
Modelling               Calculation               Design

Vision
> Calibration of III-N-V materials
> Band structure and optical properties
> Defects
> Transport properties

Characterisation

MBE & MOVPE growth

III-N-As, III-N-P, III-N-P

Components

                          

          Adapt suitable materials for
         specific devices       
Improve
modelling
parameters &
materials

Feedback

Optimisation

	

Structural               Optical            Transport

characterisations

Figure 4.2 Integration challenges and cluster vision for the Characterisation and Physical Properties Work-package

Task 2.1  Structural characterisation of the grown materials

Task 2.1 is a goal-oriented optimisation of the current fabrication schemes of dilute nitride structures which require accurate measurements of the size, shape and composition.

The structural properties of the fabricated nanostructures will be characterised by a variety of high resolution microscopy techniques such as AFM, STM and TEM. In parallel X-ray analysis will be performed in order to determine the strain fields in the structures. The accurate determination of the N content in the structures is known to be a very difficult task. We believe that the combination of various complementary characterisation techniques (microscopy, X-ray (diffraction & photoelectron spectroscopy), Raman spectroscopy and SIMS) should yield an accurate measurement of the N content (average value, dispersion) and hence an understanding of the incorporation process.
From these studies we will obtain information such as geometrical shape and size as well as material composition of the dilute nitride quantum wells or quantum dots. We will also learn about inter-diffusion processes and the distribution of strain in the structures. For instance, detailed comparisons of strain relaxation will be performed in InGaAsN and InGaAs epitaxial layers.
We will develop the relation to the growth conditions. In particular, the effects of hydrogenation or the growth on alternative surface planes such as (111)A, (111)B will be investigated.
All these measured parameters will serve as input for the theoretical description of the electronic properties of the structures which is necessary to make a direct correlation with the results of the transport and spectroscopic studies (task 2.3) .

Task 2.2  Defects : characterisation and improvement

2.2.1 Defects investigation

This task aims at a detailed investigation of the defects related to the Nitrogen incorporation in the material. These characterisations are essential since the incorporation of nitrogen in III-V compounds is usually accompanied by a drastic degradation of the optical and electrical properties of the structures (in particular a drop of the emission intensity, a broadening of the PL emission spectrum, a decrease of carrier mobility).
The crystalline quality (deep centres, localised states, nitrogen related disorder effects due to different nearest neighbour configurations, impurities, … ) of the structures will be studied by high resolution X-ray diffraction, capacitance spectroscopy, in-plane photovoltaic, photoconductive measurements, DLTS techniques and SIMS. These measurements will also provide trap activation energies and detrapping rates of carriers. The impact of these defects on the optical properties (non-radiative recombination processes, emission peak broadening) will be measured by cw and time-resolved photoluminescence experiments.
Detailed studies of the microscopic structure and chemical identification will be carried out with the aid of atomically resolved local probe microscopies (STM/AFM), spin resonance, and isotope analysis of local vibration modes.

2.2.2 Improvement

All these investigations will be the basis of further improvements of the grown material quality. The clear identification of the microscopic characteristics of the defects should yield an optimisation of the growth process in order to avoid them or reduce their impact.
Alternatively, we will be able to optimise the post-growth treatment processes (thermal annealing which yields a blue shift of the photoluminescence and an increase of the PL emission intensity) 
thanks to the progress in the understanding of the initial crystalline characteristics of the material. Annealing is usually known to promote the formation of In-N bonding (FTIR and Raman measurements). Recent results in InGaAsN quantum well study seem also to demonstrate that annealing homogenises the In distribution within the well and causes diffusion of N out of the quantum well. Furthermore, the annealing is responsible for removing partly non-radiative recombination. It will then be studied in close link with WP1 for defects and impurities depend strongly on the kind of growth techniques and growth parameters.
We aim at a microscopic understanding of the blue shift effect and the increase in PL intensity associated to the thermal annealing process.
Recent results also demonstrate that GaAsNSe/GaAs superlattices exhibit strong photoluminescence emission around 1.5µm. without thermal annealing. The role of high electron concentrations in these materials and/or the effect of strain reduction, which may explain this behaviour, will be investigated in detail.

Task 2.3 Optical and electrical characterisation of the electronic properties

After having characterised in detail the grown structures (task 2.1 and 2.2), we will explore in depth the role of nitrogen incorporation on electronic and optical properties of dilute nitride epitaxial layers, quantum wells and quantum dot structures.

2.3.1 Band structure investigations

Information about the band structure modifications due to nitrogen incorporation (bandgap energy, band offset, confined level energy, effective mass…) and its dependence on composition will be obtained experimentally mainly by optical spectroscopy, for which a wide variety of techniques is available in the consortium. These techniques cover both inter-band optics (including cw and time-resolved photoluminescence, photoluminescence excitation and absorption, photocurrent and photomodulated reflectance spectroscopy) and intra-band optics (cw and time-resolved IR and THz spectroscopy). The drastic modification of the conduction band dispersion characteristics (for epitaxial layers and quantum wells) will be accurately determined through experiments performed under hydrostatic pressure. These efforts will be complemented by cyclotron resonance and magneto-photoluminescence experiments.
The localised/delocalised duality of the conduction band wavefunctions will be probed by magneto-tunnelling spectroscopy, spatially resolved photoluminescence, high-resolution electron energy loss spectroscopy, and resonant Raman scattering experiments. The localisation of carriers on quantum-dot-like compositional fluctuations will also be studied by near-field magnetophotoluminescence experiments. The size, density and nitrogen excess of individual compositional fluctuations (clusters) will be determined.
The carrier recombination dynamics will be studied as a function of temperature by time-resolved photoluminescence or pump-probe transmission/reflection experiments. The comparison among samples with and without nitrogen will also provide information on the localised states and on the non-radiative channels associated to the presence of nitrogen or to the highly strained host matrix.
From these investigations we will obtain circumstantial insight into the properties of single carriers (electrons, holes) and of electron-hole complexes (excitons, charged excitons,…). The obtained results will be compared with the results of the detailed theoretical modelling (WP4), growth conditions and structural design parameters (WP1), device characteristics of the corresponding structures (WP3).

2.3.2 Electrical characterisations for future applications

This last task will be developed in very close link with WP3 to apply characterisation results to device fabrication and optimisation. It is obvious that III-N-V quantum well based laser performances can be drastically improved. Much work has to be done with the view to explain and improve the devices operation. Very little is known about Auger recombination, and more generally about non-radiative processes involving electron-electron scattering, electron-phonon coupling in these materials. Those processes are known to decrease drastically the efficiency of laser diodes and they will be studied to design accurate and efficient working structures.
For many potential applications (such as solar cells, HBTs) it is essential to get more information on the transport properties of dilute nitride materials. The mobility of minority carriers is known to be low in GaInNAs and related material. The experimental values are far from reaching the theoretical ones, due to defects and impurities introduced in the materiel during the growth. Hall mobilities and minority carrier diffusion lengths will thus be studied in close link with task 2.2 (defects characterisations) and a systematic study of the growth conditions related to mobility measurements will be done in collaboration with WP1. The role of the material inhomogeneities on the lateral carrier transport will be investigated.
The potential of GaInNAs/GaAs and related material system for the fabrication of tunable devices based on the quantum confined Stark effect will be investigated. The studied samples will be embedded in p-i-n structures in order to apply an external electric field. As the quantum Stark effect is a quadratic effect, the growth of samples on (111) substrates will be investigated; indeed, such samples exhibits intrinsic piezoelectric field and, in this case, the external applied electric field can only be used as a modulation field.

The DiNAMITe consortium gives Europe a critical mass of material and devices characterisation expertise, supported by the other clusters with their essential inputs. In return, the characterisation and physical properties cluster  will supply the key physical parameters which governs the device operation, thus resulting in substantial gains in European dilute nitride R&D.

The key integrating actions required for integration of work in this area and across the 3 other clusters are:
•	Launch of technical interest meetings to address “difficult” characterisation  challenges 
•	Establishment of a web-site containing a database of all characterisation expertise and resources available (equipment, skills,…) within the NoE, together with scientific results and literature
•	Development of interactive web-site and Internet discussion groups on common problems in parameter measurements (accuracy), experimental techniques…
•	Initiation of cross-cluster workshops to improve awareness of specialists across disciplines (especially between the growth  and characterisation clusters)
•	Creation of virtual graduate school
•	Initiation of secondment programme for characterisation and physical properties   specialists, including visits to growth and other fabrication and characterisation facilities to improve understanding of the other technology and compare efficiently the  data  obtained with different techniques

The performance indicators given in the Table below will judge the success of these actions.

Performance Indicators for Characterisation and Physical Properties Work-Package

	Quantitative	Qualitative	
Integration
within 
cluster	Day-to-day co-operation : exchange of samples, exchange of experimental parameters using internet
Level of formal links between partners, e.g. studentships, researchers
Contracts, grants and formal training activities involving more than 1 cluster partner	Increase in number of joint publications
Total number of visits between partners
Number of “major” challenges addressed through meetings, and progress made	
Integration
across 
clusters	Increase in availability of inputs on growth, devices and theory/modelling
Increase in characterisation researchers with cross-disciplinary skills through cross-cluster training
Level of involvement of non-cluster partners in technical meetings	Number of cross-cluster visits
Degree of activity across clusters for input data generation and feedback
Number of publications with at least 1 partner from another cluster	

Institutes involved in Characterisation and Physical Properties Work-Package (WP2)

Structural Characterisation	Optical
Characterisation	
Akdeniz University
Imperial College
Low dimensional systems – Bucharest
Philipps University
E.T.S.I. Telecomunicacion
Universität Erlangen
University of Athens
University of Bologna
University of Cádiz
Universitaet Karlsruhe
University of Liverpool
University of Nottingham
Université Paul Sabatier
University of Sheffield
University of Warwick

Samples, data,
and Expertise

	Bilkent University
Optoelectronics Laboratory
CNRS-INSA
LAAS-CNRS
LPN-CNRS
Linköping University
Philipps University
E.T.S.I. Telecomunicacion
Royal Institute of Technology
LPSCE Monastir
University of Montpellier
University of Athens
University of Essex
Universität Karlsruhe
University of Nottingham
Université Paul Sabatier
Universita di Roma
University of Sheffield
University of Strathclyde
University of Surrey
Wroclaw Univ. of Tech.
	
Defects	Transport Properties	
LAAS-CNRS
LPN-CNRS
FHM – Munich
E.T.S.I. Madrid
LPSCE Monastir
University of Athens
Universidade de Aveiro
Linköping University
Université Paul Sabatier
CNRS-INSA
Universitaet Karlsruhe
University of Montpellier	University of Essex
LAAS-CNRS
LPN-CNRS
Low dimensional systems – Bucharest
E.T.S.I. Telecomunicacion
Ruhr-Universität
University of Athens
University of Nottingham
University of Warwick	

WP3: Devices & Device Integration

The primary purpose of this Work-package is to provide a European transnational framework for the co-ordination and strategic development of device research in dilute III-V nitrides (III-Nx-V1-x ‘s) in toto.  To encompass the full device potential of this novel and exciting family of metastable semiconductors, we include III-N-As, III-N-P and III-N-Sb materials in our considerations, covering specific alloys including the following, whose approximate bandgap wavelength ranges are shown in brackets: InNP/InP (0.9 - 1.0 m), InNAs/InGaAs/InP (2 - 3 m), GaInNP/GaAs (0.7 - 0.85 m), GaAsN/GaAs (0.85 - 1.2 m), GaInNAs/GaAs (1.2 - 1.6 m), InGaAsN/InGaAsP/InP (1.2 - 2 m)  ,  GaPN/GaP (0.6 - 0.7 m), and InNSb/GaAs (10 - 15 m). 

Of the above, the most attention to date has been focused on the GaInNAs/GaAs system, mainly because of its potential for optoelectronic devices covering the 1.3 - 1.55 m data- and telecommunications wavelength bands. As is now widely appreciated, these GaAs-compatible structures allow monolithic integration of AlGaAs-based distributed Bragg reflector mirrors (DBRs) for vertical cavity surface-emitting lasers with low temperature sensitivity and compatibility with AlOx-based confinement techniques. We also pay strong attention to GaInNAs, but interpret its potential much more broadly than has typically been the case to date, where the electrically-pumped VCSEL considerations have predominated. European laboratories have taken the lead world-wide in broadening the scope of GaInNAs device activity, and we seek to accelerate this trend within the DiNAMITe consortium. 

The key integration challenges and cluster vision for the Devices Work-package are illustrated in Fig. 4.3. The consortium will enable a critical mass of device expertise and knowledge to be established and to harness the widely distributed complementary activities of growth, characterisation and theory/modelling in Europe. The primary challenge will be to meaningfully integrate the inputs from these activities in order to leverage the technology base to produce commercial devices within a realistic timeframe. This will be achieved by transferring the growth and characterisation knowledge (developed in WP1 and WP2) and powerful modelling tools (WP4). Our strategy for integration includes supply of material and device samples and modelling tools, exchange of experienced researchers and cross-cluster training of research students. This will ensure that maximum advantage is taken of the high level of European research activity in dilute nitrides in the drive towards commercialisation.

Innovation

Limitations

Optimisation

Vision
> Optimised devices for specific l ranges
> Integrated subsystems on GaAs
> Novel components with new functionality

MBE & MOVPE growth

Material characterisation

Physical properties

    III-N-As	           III-N-P                III-N-Sb
0.85 – 3 mm        0.6 – 1 mm         10 – 15 mm

                                 Adapt suitable properties &
                                 growth for specific devices
Select key
modelling
inputs &
materials

          Trends       Design rules    Device designs    

Figure 4.3 Integration challenges and cluster vision for the Devices and Integration Work-package

Within the DiNAMITe consortium, a number of partners have demonstrated world-leading lasers for the telecom wavelengths of 1.3 and 1.55 μm. The original motivation for studying GaInNAs lasers was the promise of reduced temperature sensitivity, but, although this is still under study, this has now been largely overtaken by the advantages offered by growth on GaAs substrates and the consequent economic attractions for large-scale wafer fabrication. In terms of conventional edge-emitting lasers (EELs), the next step is to extend the wavelength range for cw room-temperature operation, as well as improving the spectral purity, modulation speed and peak power output. Many applications in medicine, environmental sensing and communications can be addressed with the achievement of significant improvements in these parameters. Semiconductor optical amplifiers (SOAs) are another important device focus, since it is widely predicted that the market for SOAs in photonic access networks will increase dramatically in a few years. At present no practical edge-emitting dilute nitride SOAs have been reported, although a theoretical study from the University of Essex (DiNAMITe member) has predicted that they will have favourable properties at telecom wavelengths. In addition to EELs and SOAs, Vertical Cavity Surface-Emitting Lasers (VCSELs), Vertical External Cavity Surface-Emitting Lasers (VECSELs), Vertical Cavity Semiconductor Optical Amplifiers (VCSOAs), and Semiconductor Saturable Absorber Mirrors (SESAMs) are of increasing importance, and more details of these devices are given below. First results on GaInNAs VECSELs, VCSOAs and SESAMs have recently been obtained by the DiNAMITe membership (Strathclyde and Tampere ORC).

1.1.1	Institute	1.1.2	Core Skill	
Imperial College	Dilute nitride based optoelectronic devices for 1300 - 1550 nm applications	
Infineon	Laser growth, characterisation and optimisation	
LAAS	Fabrication, design and test of GaInAsN diode lasers	
LPN	1.3µm and 1.55µm lasers and 1.3µm VCSELs on GaAs, GaNAsSb HBT	
Madrid	InGaAsN-based QWIPs and lasers	
Nottingham	Opto-electronic devices (e.g. lasers, SOAs, photodetectors, EO modulators, etc).	
Strathclyde	GaInNAs SOAs, VCSOAs, VCSELs, SESAMs for mode-locking	
Surrey	High pressure studies of semiconductor materials and lasers	
Tampere ORC	1.3 µm VCSELs and long-wavelength high-power edge-emitting lasers	

Diode-pumped VCSELs, VECSELs and VCSOAs are closely-related to each other, but operate in quite different regimes. They share advantages in design flexibility, novel functionality and minimised loss resulting from optical excitation in an undoped structure, especially important for wavelengths beyond 1 m. The optical excitation is most advantageously diode-based, and can be coupled to the structure via free-space relay optics or via single- or multi-mode fibre delivery systems. VCSELs are typically monolithic microcavity structures, one or a few wavelengths in thickness, incorporating both epitaxially  grown mirrors and capable of only a few mW of output power (though typically more with optical pumping than in electrical injection operation). VECSELs are generally air-spaced cavity structures, where the cavity length may be anything from ~100 m (in which case tuneability may be achieved by MEMS-mounting of the external mirror) to tens of cm. With appropriate mode-matching and cavity design, these lasers can operate with up to several Watts of single-transverse mode output power, and span applications from data communications to nonlinear optics and scientific use, including intracavity and extracavity spectroscopic applications e.g. in sensing. Important new “micro-chip” formats of such lasers are currently under development and are anticipated to form a key part of this Work-package. The vertical cavity semiconductor optical amplifiers (VCSOAs) are VCSEL- or short-cavity VECSEL- structures (potentially MEMS-tunable) operated below threshold to give gain to an external signal at cavity resonance, and with applications including optical interconnects, optical switching and as wavelength-selective pre-amplifiers. 

These devices are most readily embodied in GaInNAs, for operation in the 1.2 - 1.6 m range. This covers data- and telecom applications, but also interesting regimes for sensing and scientific use.  The VECSELs can potentially incorporate saturable absorbers for very-high repetition rate (~100 GHz) pulsed and potentially MEMS-tuneable sources. VECSEL devices in the 2 - 3 m range for applications in e.g. Free-Space Optical (FSO) communications, are possible using InAsN/InGaAs/InP with AlGaAs metamorphic mirror growth. 

Electrically-driven format devices are the preferred embodiment for mass-market applications, offering wall-plug-efficient operation, direct modulation, low cost and compactness. Electrically-driven VCSELs have been the primary focus of international work to date with GaInNAs, although major effort is still required to extend these devices in wavelength coverage, to optimise threshold and power performance and to create special high-functionality embodiments such as MEMS-tuneable structures (which will in effect be VECSELs). There has been great success from NOVALUX Inc. in the USA in introducing a high-performance, electrically-driven high-power (>0.5 W optical power output) VECSEL device at 980 nm, the so-called NECSEL; the programme will co-ordinate efforts to extend NECSEL-like device performance to 1.3 - 1.55 m operation with GaInNAs/GaAs structures. Electrically-driven GaInNAs VCSOAs have also yet to be demonstrated, although they feature in the development plans of teams within the consortium. 

Semiconductor saturable-absorber mirror structures (SESAMs) have demonstrated widespread applicability for self-starting passive mode-locking of (diode-pumped) solid-state lasers, to produce high-performance picosecond and femtosecond laser sources for scientific, instrumentation and industrial use. Very recently, these devices have also shown applicability for ultrashort pulse generation at >GHz repetition-rates, both in DPSS lasers and surface-emitting semiconductor lasers. These devices are undoped monolithic DBR structures incorporating one or more quantum wells for saturable absorption. Low loss and high-damage threshold requirements demand pseudomorphic growth, and have, until very recently, essentially limited these devices to the 800 - 1100 nm range, but extension beyond this range is urgently required by a host of mode-locking applications. GaNAs/GaAs and GaInNAs/GaAs alloys clearly offer the potential to cover the 1.1 - 1.6 m range, spanning tunable vibronic solid-state laser systems such as Cr:forserite (1200 - 1300 nm), Cr4+:YAG (1400 - 1550 nm), Erbium-doped fibre lasers, and the important ~1. 3 m laser transitions in Nd-based media including Nd:YLF, Nd:YVO4 and Nd:YAlO. These sources may be expected to cover ps to fs operation with average powers of 0.1 - 100 Watts at 0.1 – 10 GHz repetition rate, depending upon design and gain media specifics, to impact areas including confocal microscopy for biomedicine, nonlinear optics (including frequency conversion to the visible for projection displays), metrology and materials processing. These SESAMs also offer the potential to extend the 1 – 10 GHz (and potentially above) mode-locked surface-emitting semiconductor laser sources, which to date have been limited to ~1.0 m, to the 1.3 - 1.55 m communications band. In addition to the above, exciting opportunities exist in other wavelength ranges with other alloys. For example, new Cr:Chalcogenide DPSS systems (Cr2+: ZnSe/CdSe/CdSSe) offer tuneable laser performance in the 2 – 3 m range, and InAsN/InP structures in conjunction with AlGaAs DBRs deposited by metamorphic growth, present interesting possibilities for SESAM-mode-locked operation in this range.    

In addition to the devices described in detail above, the DiNAMITe consortium also includes partners with expertise in modulators and photodiodes, including Quantum Well Infrared Photodetectors (QWIPs) and resonant cavity-enhanced photodiodes (RCEPDs). The first observation of electro-absorption in a InGaAsN-GaAs single quantum well pin-diode structure has been reported recently by a team from Imperial College and the University of Sheffield (both members of DiNAMITe), whilst InGaAsN RCEPDs have been demonstrated at Columbia University and the Chinese Academy of Sciences. Optimisation of these devices in the GaInNAs/GaAs system presents many challenges that the Network will address. 

The integrating actions that are judged necessary for integration within the devices field and across the other 3 clusters are
•	Workshops with other clusters will aim to solve key generic research interests and will be in the interests of all partners as joint publications will be planned and joint research proposals will be prepared with the objective of solving problems that require dedicated man-power, consumables and equipment.
•	Sharing of research platforms/tools/facilities/infrastructure via a user programme
•	Joint management of the knowledge portfolio, IP protection and exploitation
•	Staff exchange, training and career development
The performance indicators given in the Table below will judge the success of these actions.

Performance Indicators for Devices and Device Integration Work-Package

	Quantitative	Qualitative	
Integration
within 
cluster	Day-to-day co-operation, exchange of samples, sharing know-how, etc
Level of formal links between partners, e.g. studentships, researchers
Contracts, grants and formal training activities involving more than 1 cluster partner	Increase in number of joint publications
Total number of visits between partners
Number of “major” challenges addressed through meetings, and progress made	
Integration
across 
clusters	Increase in availability of inputs on growth, material characterisation and theory/modelling
Increase in device researchers with cross-disciplinary skills through cross-cluster training
Level of involvement of non-cluster partners in technical meetings	Number of cross-cluster visits
Degree of activity across clusters for input data generation and feedback
Number of publications with at least 1 partner from another cluster	

WP4: Theory and Modelling

The targets for this work-package are to develop enhanced theoretical understanding of the optical and electrical  properties of dilute nitride materials in bulk form, and in quantum well (QW) and quantum dots (QD), and also to develop simulation and modelling tools with predictive capability for the behaviour of optical, optoelectronic and electronic devices fabricated in the dilute nitrides material system. The range of materials to be considered will include, but not necessarily be limited to, those studied in the complementary work-packages on growth and material characterisation. Similarly, the devices to be modelled will be those addressed by the work-package concerned with devices and device integration.

To date, most theoretical attention has been focussed on understanding the band structure of the GaInAsN/GaAs system and on evaluating gain spectra and threshold conditions for 1.3 m lasers. However, within the DiNAMITe consortium we will broaden the range of materials and devices to be studied. As we increase our understanding of band structure and the effects of strain, defects, etc in the dilute nitrides we can calculate the electrical and optical properties, including radiative and non-radiative recombination for the materials and structures of interest. The key integration challenges and cluster vision for the devices work-package are illustrated in Fig. 4.4. A primary challenge will be to select only the most pertinent aspects of fundamental theory in formulating device models; these must be rigorously calibrated against inputs from the growth and characterisation clusters

Our simulation approaches are mostly composed of mutually interrelated parts describing optical, electrical, gain, thermal, and sometimes mechanical phenomena occurring in optoelectronics devices under pulsed or continuous-wave operation. These physical phenomena are, however, strongly and mutually interrelated. Hence our comprehensive models of various optoelectronics devices contain not only a detailed description of particular physical processes crucial to their operation but they also require accurate self-consistent parts including numerous interactions between various individual physical phenomena. The above models enable us to better understand the physics of operation of devices in the whole complexity of a dense network of many nonlinear and mutual interactions between individual physical processes.

In constructing simulation tools, the appropriate optical and electrical properties must be accurately modelled and again tested against data from other clusters. Cross-cluster exchanges and training will be very important in ensuring that the appropriate inputs are selected and used with caution. Significant effects of nonlinearity, coupling and feedback must be included if the models are to be of real value. The vision is for the theory not only to indicate the trends of device behaviour with various parameters, but also to have a predictive capability in guiding device design and optimisation.

Vision

>Predictive capability
> Parameter trends     
> Design rules
> Device design
> Device optimisation

Coupling

Nonlinearity

                                 Adapt suitable properties
                                 for specific devices
Select key
fundamental
inputs &
omit others

EELs,       VCSELs       SESAMS      QWIPs
SOAs       VCSOAs      modulators   RCEPDs

Optical properties

Electrical transport

Rad. & non-rad. recombination

Feedback

  Band structures        Strain          Defects

Figure 4.4 Integration challenges and cluster vision for the theory and modelling work-package

From the theoretical point of view the main research tasks may be grouped into calculations of fundamental electronic properties, optical and electrical transport properties, and radiative and non-radiative recombination mechanisms. Under the first heading we include the topics of band formation and band structure, with an especial focus on assessing the accuracy of the band anticrossing (BAC) model that is widely used for GaInAsN. This will lead to a study of the effects of N and In compositions and hence to design rules for achieving emission/absorption at specific wavelengths. Calculations of densities-of-states and of effective mass values for electrons and holes will be made and then importance of conduction band non-parabolicity will be assessed for the various materials of interest. The important effects of strain in epilayers, QWs and QDs must be included in the theoretical studies, and issues of band alignment in heterostructures will be addressed. Fortunately the DiNAMITe consortium membership is well provided with expertise in all these topics and many of the partners have already made very significant contributions to the field (see Table of core skills below). Specialised theoretical topics also feature in the plans of the consortium members, and these include envelop function calculations of excitonic properties, multiplet N states in dilute nitrides, properties induced by short range order effects, the effects of potential fluctuation and the role of hydrogen on band structure.
 
Institute	Core Skill	
Bilkent	Many body effects, modelling of devices, scattering mechanisms, electron-phonon effects	
Bristol	Materials and gain modelling, small and large signal modulation, dynamical laser modelling	
INSA	Band structure engineering of InGaAsN structures (barrier GaAs, GaAsN, GaAsP, InGaAsP/InP)	
Dokuz Eylul	Band structure, Stark effect, intense field effect, density of state  calculations, exchange correlation effect on subband population and mobility calculations.	
Essex	Theory of band structures, gain and optical properties, device design, novel device concepts and modelling	
Lodz	Simulation of optoelectronic devices	
NMRC	Calculation of electronic structure and gain characteristics of dilute 
nitride media 	
Philipps Marburg	Band structure, carrier relaxation, optical properties	
Surrey	Modelling of material and lasers based upon dilute nitrides	

Calculations of optical properties of dilute nitrides in the visible and infra-red regions of the spectrum are essential in order to permit comparison with experimental measurements by other clusters. The linear absorption and refractive index will be studied as functions of wavelength and material compositions for a wide range of relevant structures. Inter-valence band absorption (IVBA) is of significance as a possible cause of temperature sensitivity in lasers and this must be investigated theoretically in the dilute nitrides. Third-order nonlinear optical coefficients will be calculated in order to assess the scope for all-optical  signal processing components within the dilute nitrides. Indeed the first nonlinear application may be cited as the saturable absorbers used in SESAMs (see WP3). Electro-absorption and electro-refractive effects - Franz-Keldysh (FK) and Quantum-Confined Stark Effect (QCSE) - are to be studied theoretically in view of their importance for optical modulators. This will be done in close collaboration with the characterisations performed in WP2. Whilst DiNAMIte members (Imperial College and Sheffield) have already experimentally demonstrated electro-absorption in a GaInNAs QW, the prediction (from Columbia University) is yet to be tested that the band alignment of this material is favourable for the design of tuneable devices based on QCSE. Calculations of electrical transport effects in dilute nitrides will include intra-band relaxation processes, inter-valley scattering processes, carrier heating and tunnelling in an electric field.

Studies of radiative and non-radiative recombination mechanisms are a fundamental building-block for the development of optoelectronic devices in dilute nitrides. The spontaneous and stimulated emission rates have been calculated for GaInNAs at 1.3 μm by many authors, but extension to other dilute nitrides and other wavelength ranges still represents a major challenge which will be addressed in the DiNAMITe consortium. Many-body effects, including exchange-correlation effects, are essential for accurate models of gain spectra in lasers and optical amplifiers, and the DiNAMITe theoretical teams at Marburg, Surrey and NMRC have made strong contributions in this area. The differential gain is a key parameter for laser modulation and remains an important subject of study as new materials and structures are explored. Similarly the differential refractive index and linewidth enhancement factor have strong influences on laser spectrum (chirp, linewidth), dynamics and noise, and these must also be studied theoretically. As regards non-radiative recombination, in addition to recombination through defects, the Auger effect is of especial significance for wavelengths beyond 1 m and it is a worthy subject for theoretical study. Temperature sensitivity of long-wavelength lasers has been attributed in part to Auger recombination and the strength of this effect in dilute nitrides must be evaluated. Whilst this is under study experimentally at Surrey (DinNAMITe member) using pressure techniques, no theoretical calculations of Auger rates have been reported as yet. The converse effect, impact ionisation, is of key importance for avalanche photodiodes (APDs) and has yet to be evaluated for the dilute nitride materials.

Turning from pure theory to modelling and simulation, the dilute nitrides offer attractive and challenging prospects. Whilst results of modelling 1.3 μm lasers, SOAs, VCSELs, and VCSOAs have been presented by DiNAMITe members (Bristol, Essex, INSA, Lodz, Marburg, NMRC, Strathclyde, Surrey), no really comprehensive simulations have yet been reported. Most of the published models have been restricted to cw operation (an exception is the small-signal laser modulation model reported by Bristol recently), but prediction of the dynamics and transient operation of many optoelectronic devices is of vital importance for future work. Whilst commercial modelling tools are available, these are in general limited to well-known materials systems (GaAs/AlGaAs, InGaAsP/InP) and a small range of devices, and are not sufficiently flexible to encompass new materials. As regards newer devices such as VECSELs, SESAMs, modulators, QWIPS, etc there are as yet no models available. There is therefore a huge opportunity to make significant progress, with IP potential, if reliable simulators can be developed in a timely manner. The DiNAMITe consortium gives Europe the edge in this by drawing together a critical mass of modelling expertise, supported by the other clusters with their essential inputs. In return, the theory and modelling cluster will supply model predictions, parameter trends and device designs to the other clusters, thus resulting in substantial gains in European dilute nitride R&D.

The key integrating actions required for integration of work in this area and across the 3 other clusters are:
•	Launch of technical interest meetings to address “difficult” theory and modelling challenges
•	Establishment of a web-site containing a database of all expertise and resources available within the NoE, together with scientific results and literature
•	Development of interactive web-site and Internet discussion groups on common problems in theory and modelling
•	Initiation of cross-cluster workshops to improve awareness of specialists across disciplines
•	Creation of virtual graduate school
•	Initiation of secondment programme for theory and modelling specialists, including visits to growth, fabrication and characterisation facilities to improve understanding of the technology and define and generate data required for model validation in close interaction with appropriate experts

The performance indicators given in the Table below will judge the success of these actions.

Performance Indicators for Devices and Theory and Modelling Work-Package

	Quantitative	Qualitative	
Integration
within 
cluster	Day-to-day co-operation using internet to transfer data
Level of formal links between partners, e.g. joint studentships, researchers
Contracts, grants and formal training activities involving more than 1 cluster partner	Increase in number of joint publications
Total number of visits between partners
Number of “major” challenges addressed through meetings, and progress made	
Integration
across 
clusters	Increase in availability of inputs on devices, growth and material characterisation
Increase in modelling researchers with cross-disciplinary skills through cross-cluster training
Level of involvement of non-cluster partners in technical meetings	Number of cross-cluster visits
Degree of equipment usage across clusters for model data generation
Number of publications with at least 1 partner from another cluster	

B4.2 Programme of Jointly Executed Research Activities

Joint research activities carried out by DiNAMITe will build on the funded research existing at partner groups and mainly directed towards addressing difficult challenges in cooperation that are likely to spin out new funding opportunities. The issues to be addressed are organized into 4 sub work packages (WP1(a)- 4(a)) each managed by the parent work package (WP1-4)

WP1(a): Jointly executed research in growth of materials and devices

This sub work package will address the challenges in the growth of complex novel semiconductor materials and devices based on dilute nitride compounds

•	 Doping studies with different dopants:(Be, C, Si, Te) to study electrical properties and interaction of dopants with N. This important field has received very little attention so far and clearly calls for action, otherwise electronic devices based on dilute nitrides will not be achievable.
•	Atomic-layer-type growth modes such as MEE, ALE, which might be more suited to the typically used low-temperature growth of dilute nitrides than continuous growth
•	Different routes to reach long wavelengths (QWs, QDots, different alloys) hence to push the long-wavelength limit of GaAs-based materials as far as possible
•	Growth of complex structures with well-defined strain in the layers, with and without strain compensation by the GaAsN
•	InGaAsSbN/GaAs with strain-mediating layers
•	In(Ga)As(N) QWs with InAs- (or more generally InGaAsN-) Quantum Dots embedded in them

WP2(a) : Jointly executed research in characterization and physical properties

This sub work package will address the physical properties, band structure, structural, optical and electronic characterization issues
•	Structural characterisation of novel materials: These will be characterised by AFM, STM and TEM. In parallel X-ray analysis will be performed in order to determine the strain fields in the structures. The accurate determination of the N content in the structures is known to be a very difficult task. The combination of various complementary characterisation techniques (microscopy, X-ray (diffraction & photoelectron spectroscopy), Raman spectroscopy and SIMS) should yield an accurate measurement of the N content (average value, dispersion) and hence an understanding of the incorporation process.
•	Defect  characterisation and  material improvement: This joint activity aims to carry out a detailed investigation of the defects related to the Nitrogen incorporation in the material. These characterisations are essential since the incorporation of nitrogen in III-V compounds is usually accompanied by a drastic degradation of the optical and electrical properties of the structures. These will be studied by high resolution X-ray diffraction, capacitance spectroscopy, in-plane photovoltaic, photoconductive measurements, DLTS techniques and SIMS.
•	Optical properties: The carrier recombination dynamics will be studied as a function of temperature by time-resolved photoluminescence or pump-probe transmission/reflection experiments. The comparison among samples with and without nitrogen will also provide information on the localised states and on the non-radiative channels associated to the presence of nitrogen or to the highly strained host matrix.
•	Electronic Properties: work has to be done with the view to explain and improve the devices operation. Very little is known about Auger recombination, and more generally about non-radiative processes involving electron-electron scattering, electron-phonon coupling in these materials. Those processes are known to decrease drastically the efficiency of laser diodes and they will be studied to design accurate and efficient working structures
•	Band structure: Band structure modifications due to nitrogen incorporation (bandgap energy, band offset, confined level energy, effective mass…) and its dependence on composition will be studied experimentally using optical spectroscopy, covering both inter-band optics and intra-band optics./

WP3 (a): Jointly executed research in devices & device Integration

This sub work package will address the novel OE devices and issues related to their integration. 
•	Vertical Cavity Surface-Emitting Lasers (VCSELs), Vertical Cavity Semiconductor Optical Amplifiers (VCSOAs), These share advantages in design flexibility, novel functionality and minimised loss resulting from optical excitation in an undoped structure, especially important for wavelengths operation in the 1.2 - 1.6 m
•	EELs and SOAs operation in the 1.2 - 1.6 m as or pump lasers and amplifiers in optical communications networks.
•	Semiconductor Saturable Absorber Mirrors (SESAMs) for very-high repetition rate (~100 GHz) pulsed and potentially MEMS-tuneable sources
•	Vertical External Cavity Surface-Emitting Lasers (VECSELs) VECSELs  (cavity length may be anything from ~100 m to tens of cm (tuneability may be achieved by MEMS-mounting of the external mirror). VECSEL devices in the 2 - 3 m range for applications in e.g. Free-Space Optical (FSO) communications
•	E-Absorption modulator and RCEPDs  for 1.2-1.6 μm applications and (QWIPs)

WP4(a): Jointly executed  research in theory and modelling

This sub work package will address the issues related to the  theoretical understanding of the optical and electrical  properties of dilute nitride materials in bulk form, and in quantum well (QW) and quantum dots (QD), and also to the development of  simulation and modelling tools to explainthe behaviour of optical, optoelectronic and electronic devices fabricated in the dilute nitrides material system the novel OE devices and issues related to their integration. 

•	Understanding the band structure of the GaInAsN/GaAs system and on evaluating gain spectra and threshold conditions for 1.3 μm lasers. And extend these to other range of materials and devices to be studied.
•	 Understanding of band formation & band structure (with an especial focus on assessing the accuracy of the band anticrossing (BAC) model that is widely used for GaInAsN) and the effects of strain, defects, etc in the dilute nitrides, calculations of fundamental electronic properties, optical and electrical transport properties, and radiative and non-radiative recombination mechanisms,.
•	Fundamental theory in formulating device models; these must be accurately modeled,  rigorously calibrated and tested against data from groups in the joint activity sub-work packages.
•	Constructing simulation tools for devices to be jointly studied in other clusters.
•	Calculations of optical properties of dilute nitrides in the visible and infra-red regions of the spectrum
•	Calculations of third-order nonlinear optical  constants in order to assess the scope for all-optical  signal processing components , e.g. SESAMs.
	 Calculations of Franz-Keldysh (FK) and Quantum-Confined Stark Effect 	(QCSE) in devices based on the material systems in jointly executed WP1(a)

B.4.3 Activities to spread excellence

We attach up most importance to “Spreading of Excellence” activities of the DiNAMITe project. Therefore, a specific work package, WP5, has been designated to coordinate these activities. WP5 is entitled “Activities for spreading excellence” and will be coordinated by Prof. Weimin M. Chen from LIU. I will have the following three sub-packages:

WP5.1	Training and Education
WP5.2	Dissemination and Networking
WP5.3	Integration toward a self-sufficient consortium after FP6 funding

Each sub-package will have a programme manager reporting to the coordinator of WP5.

WP5. Activities for spreading excellence 

The work package coordinator will be assisted by managers of various activity programmes and leaders of thematic scientific work packages, who will be responsible for managing the activities through internal calls, proposal assessment, and allocation of the budgeted resources. Note that the internal calls will ensure that quality is maintained through competitive bids and appraisal of proposals. The decisions on the activities proposed by the coordinator should be approved by the steering committee of the DiNAMITe NoE. The management of these activities will require the employment of a part-time secretary.

Objectives:
-	Train academic and industrial researchers, students and other key staff with the highest-level knowledge and skills to ensure the sustainability of Europe's excellence in dilute nitrides and related optoelectronic materials, devices and system;
-	Disseminate knowledge and technologies of the NoE to strength the competitiveness of  European scientific and industrial communities and to raise public awareness of science;
-	Consolidate the integration of the NoE and secure alternative funding to ensure a self-sufficient consortium after the FP6 funding.

Description of work

WP5 will consist of the following three sub-packages:
WP5.1	Training and Education
WP5.2	Dissemination and Networking
WP5.3	Integration toward a self-sufficient consortium after FP6 funding

WP5.1	Training and Education 

The Training and Education part of the activities for spreading excellence will be carried out by means of flexible-term short courses and tutorial workshops, fixed-term summer and winter schools, long-term joint Master and Ph.D. supervision/programme, and postdoc fairs. The material and presentations will be made available through the DiNAMITe website for those unable to attend these events. They will be an opportunity for cross-education between approaches, problem areas and the demands of particular applications. They will also be open to general public. The programme manager, assisted by thematic work package leaders, will be responsible for suggesting the most appropriate topics and experts to the WP5 coordinator. Appropriate funds will be available from the NoE to assist in the preparation of the material by the speakers, to aid the participation of students (in full) and researchers (in part), and as well as ensuring that the website includes all the relevant material.

The short courses and tutorial workshops programme should serve to address a general aspect or a particular issue that is timely and important in research and development of dilute nitrides. The times for such short courses or tutorial workshops should be flexible and upon demand from both academia and industry, but no less than once a year. They will feature detailed presentations over one or more days by leading researchers on the given topic.  The topic for the first workshop will be "Efficiency of GaInNAs lasers and beyond" hosted by Dr. H. Riechert from Infineon Technologies in Munich, scheduled in the third month after the NoE is funded. The topic of the second workshop will be “Extraordinary effects of N on the band structure of dilute nitrides: physics and implications” hosted by Dr. I.A. Buyanova from Linköping University during the second half of the first year.

The summer and winter schools programme is intended to provide a substantial coverage of chosen research areas or topics with systematic, in-depth and state-of-the-art knowledge and skills. They should be organized at hub institutions that have the relevant expertise and facilities, such that hand-on training can be conducted on-site. The schools should typically last for two weeks to one month. The intended participants will be academic and industrial researchers, students and other key staff. The first summer school will be organised in 2004 on the topic of "Spectroscopy of dilute nitrides" C.F. (McConville has volunteered to organise this at The University of Warwick.)

The idea of this network is also to encourage the transfer of skills in training from western to eastern and south European countries (and vice versa). For instance several members of this Noe are already involved in a European Tempus-Meda project designed to create a Master in Nanosciences and Microtechnology in IPEST (Tunis). We plan to develop this kink of cooperation with other consortium members.

Within the joint Master and Ph.D. supervision/programme, we intend to establish a virtual DiNAMITe graduate school. The school will have a common list (with related ECTS) of lectures and courses available to all partners within and outside of the NoE, given in partner institutions, or by lecture tours (given by leading scientists) or by DiNAMITe summer/winter schools. The school will also make available theoretical and experimental expertise and facilities of all partners for thesis work of participating students. All information will be publicized on the DiNAMITe website.

The postdoc visits programme aims to provide young scientists with the possibility to visit other partner laboratories in order to complement and expand their competence. Postdoc openings will be publicised on the DiNAMITe website. In addition, a postdoc fair will be held annually in the spring during the flagship scientific meeting of the NoE - The European Materials Research Society Spring Meeting in Strasbourg, France.
 
WP5.2	Dissemination and Networking 

The dissemination and networking activities will be carried out by the following vehicles: knowledge management, scientific publications and conference organizations, and brokerage of expertise for industry and technology transfer.

The core of the knowledge management programme will be to establish a dedicated interactive DiNAMITe WEB site that is mostly public. It should include the following information:
-	Information about research activities of partner groups (including WEB sites of individual groups’ laboratories);
-	Paper bank (list and possibly copies of downloadable publications relevant to the scientific activities of the NoE);
-	Common database of research resources (platforms/tools/facilities/infrastructure) within the NoE;
-	A databank of scientific specimens available within the NoE to facilitate device and sample exchange;
-	A user program for sharing of the resources
-	Information about conferences/workshops/symposia (both within the network including call for proposals and worldwide);
-	List of potential host groups for short visits/training;
-	Partners looking for short-term training;
-	Information about steering committee meetings (minutes, immediate goals etc);
-	Forthcoming activities;
-	Information about travel to individual groups;
-	Problems Page:  Questions/ and Answers (related to NoE activities);
-	Distance Learning: Copies of Postgraduate course material from various groups in the NoE (Requires IoP rights);
-	Research Positions and studentships available in the network;
-	Establishment of a “travelling theses library” - copies of recent PhD and MSc theses in the NoE can be borrowed by member groups (Requires IoP rights);
-	Equipment aid (surplus equipment from more advanced laboratories to less developed laboratories to help in-house research and training).
-	Links with other relevant EU programmes, e.g. COST 288;
-	Enabling members to have access to better equipped libraries within the NoE.
-	A databank of companies interested in the DiNAMITe activities.

One part of the programme of scientific publications and conference organizations will focus on publications:
 
-	Publication of scientific results in international journals, in which the partners of the NoE have already shown an excellent track-record;
-	Publication of special issue journals (A special issue in the Journal of Physics: Condensed Matter Physics is in preparation, edited by Prof. N. Balkan of the NoE);
-	Editing topical books (Profs. I.A. Buyanova and W.M. Chen from the NoE are the editors of a book on "Physics and Application Dilute Nitrides" by Taylor & Francis to be published in 2004).

As another important part of the programme of scientific publications and conference organizations, the DiNAMITe NoE will provide the leadership or assistance in the organization and hosting of major international conferences and meetings at DiNAMITe core sites. An annual symposium in the research area of the DiNAMITe NoE at the European Materials Research Society Spring Meeting will be organized by the NoE, and will serve as a flagship scientific meeting of the NoE that will be completely open to scientists outside of the NoE. The first DiNAMITe symposium is scheduled in June 2004. In addition, we have been and will be involved strongly in the organization of other major international conferences and meetings, such as the American Materials Research Society Spring and Fall Meetings, NATO workshops, Int. Conf. On Nitride Semiconductors, Int. Symp. On Compound Semiconductors, Int. Conf on Defects in Semiconductors, International Conference on Superlattices, Nanostructures and Nanodevices, etc. Proceedings of these conferences will be published in internationally recognized scientific journals. Other activities include organization of joint workshops with other NoE’s with the FP6 programme on inter-disciplinary areas.

In the programme of brokerage of expertise for industry and technology transfer, The DiNAMITe NoE will provide a one-stop entry point for external bodies seeking professional consultancy in areas of expertise that can be supplied by DiNAMITe members. The programme manager will ensure that an up-to-date easily accessible database of expertise is maintained and publicised. When requests are received the programme manager will be responsible for suggesting any suitable experts, who may be able to assist. He or she would pass the names of potential collaborators to the external contact and arrange negotiations. Where appropriate he or she would provide advice and assistance in the establishment of contracts. Where DiNAMITe had played a key role in securing and negotiating the contract it would be expected that some percentage of the costs would be allocated to DiNAMITe. The programme will also provide advice and assistance for individuals or groups considering establishing a company to bring some product to market that arises from expertise developed within the framework of DiNAMITe. It will also assist in negotiations between companies and DiNAMITe members concerning joint ventures that might be established with the aim of bringing expertise developed within NoE into new or existing products. This programme will also organize special meetings or business workshops between academics and SMEs to speed up technological innovation and transfer. Open-house at core partner sites will be another means to raise public awareness and establish informal contacts with industry. Regional business development structures will also be employed to help start-up companies.

WP5.3	Integration toward a self-sufficient consortium after FP6 funding 

Due to the importance of these activities, a separate sub-work-package has been defined. However, this activity is due to start not before month 6 of the project, as many other basics of the DiNAMITe have to be set up immediately after project launch. The objective of this activity is to set up a sustainable (durable) DiNAMITe organization within a 4-year period. This organisation should be able to continue to deliver the services and integrate relevant European activities beyond the period of EC financial support.

Activities needed to ensure a durable and self-contained consortium after the FP6 funding:

-	Measure performance in integration results achieved
-	Update ‘performance plan’ annually
-	Concept to convert DiNAMITe into a non-for-profit organization:
	Set up a “business plan” to reach self-funding DiNAMITe NoE Proposal
	Discuss plan with industrial advisory board (IAB) and interested groups and
	update it annually
	List competitive activities in Europe and overseas & compare their “business 	plan” and 	benchmark with DiNAMITe
-		Set up a “European Centre for Optoelectronic Materials, Devices and Systems Research” for continuation of the NoE activities after the FP6;
-		Search for long term funding or self funding options for the NoE during its FP6 funding period, from e.g. ESF, national funding agencies of participating countries, exchange programme between countries and faculties, industrial sponsorship; 
-		Organize PhD student conferences (By students and for students), which will help to maintain and strengthen the future scientific collaboration in Europe.
-		Setting up European-MSc courses and long distance internet based courses
-		Set up an IP library: Gather the appropriate intellectual property rights (IPR) arising from Integration Activities and Dissemination funded by DiNAMITe which can be commercialized and thus fund future DiNAMITe activities beyond the period of EU funding. (IPR resulting from research carried out with funding from external sources, will not be owned by the DiNAMITe consortium)
-		Analyse potential for commercial spin-offs and encourage these.
-		To generate further income and maintain a viable consortium after the FP6 funding we also plan to take the following actions:
		Membership fee for DiNAMITe organization
		Consultancy services
		Commercialization of software implementation tools 
	Commercial short training courses, industrial courses and summer schools and	commercialization of training material 
	Commercialize reports, books, manuals 
	Commercialize MSc and Internet based courses

Deliverables

D5.1	Short courses
D5.2	Tutorial workshops
D5.3	Summer/winter schools
D.5.4	Joint MSc and Ph.D. supervision/programme
D.5.5	Postdoc fairs and visits
D.5.6	Establishment of the DiNAMITe Website
D.5.7	Publication of scientific results in international scientific journals and proceedings
D.5.8	Editing special issue journals and books
D5.9	Organization of international conferences
D.5.10	Business workshops and meetings with SMEs, open-house
D.5.11	Establishment of a “European Centre for Optoelectronic Materials, Devices and 	Systems Research”
D.5.12	Organization of student conferences
D.5.13	Funding of the DiNAMITe NoE from other sources than FP6.

B.4.4 Consortium Management activities

The Project Coordinator will be responsible for ensuring smooth running of the overall joint programme activities, integrating  and spreading of excellence activities. He will be responsible for the preparation of IPR regulations within the consortium regarding the joint activities between the participating groups, managing a grant scheme for JRA projects as budgeted in section B7.

Projects will be small joint research projects, preliminary work or proof of concept type of studies needed for securing other funding. Project partners will submit a project proposal to the management board , which will allocate the of appropriate funding within the budget limitations and regulations (Coordinator’s detailed management responsibilities are listed in section B7

The management activities of the technical work packages, spreading excellence work package, joint research are depicted schematically as a flow-chart in figure 4.5.
Here, the coordinators of the four technical work packages (WP1-WP5) will be responsible for the integrated (IA) and joint research activities (JRA) within their clusters. The group leaders of participating research groups in these work packages report to the WP coordinator. The four WP coordinators will report to the DiNAMITe management board.  

The coordinator of WP5, “Spreading Excellence” who will also report to the management board, will have the overall responsibility of the smooth running of the three sub-work packages (WP5.1: Training and Education, WP5.2	: Dissemination and Networking, WP5.3: Integration towards a self-sufficient consortium after the EC funding). The three sub-WPs are managed by three programme managers who will report to the coordinator of WP5 and they will all be members of management board. The coordinator of DiNAMITe, together with the management board, will ensure that the highest level of collaboration exists between all the work packages and the Industrial Advisory Board (The role of the industrial advisory board is provide top-level guidance and feedback to the management board, and ensure the work continues to be focused on actions that are relevant to the needs of European industry as explained in detail section B7)
In order to maintain a smooth running of the coordination activities relevant to the Cluster relations, Training, Dissemination and Networking Coordination, and preparation of IPR templates  we will delegate some of the coordination activities to independent consultancies. A large number of management consultancies with experience in large NoE activities are available (e.g. ISLI, 4M2C etc. )We make enough provisions in the budget for sub-contracting some of the coordination activities. 
The coordination of Integration activities towards a self-sustainable network will also be sub-contacted partly, to an experienced marketing and business consultancy. The management board will take appropriate steps to negotiate relevant contractual and financial terms with such consultancies.

MANAGEMENT BOARD
Project Coordinator + (Coordinator of WP5 + 3 programme managers of sub- work packages, WP5.1 – WP5.3) + (Four Coordinators of technical work packages (WP1- 4)) + Chair person of Industrial Advisory board

Coordinator of WP1

Coordinator of WP2

Coordinator of WP3

Coordinator of WP4

Project Coordinator

(Group leaders of All participating clusters) in 

 WP1 :
Integrating activities
&
WP1(a) : Joint Research Activities

(Group leaders of All participating clusters)in

WP2 :
Integrating activities
&
WP2(a): Joint Research Activities

(Group leaders of All participating clusters) in

WP3: 
Integrating activities
&
WP3(a):Joint Research Activities

(Group leaders of All participating clusters) in 

WP4: 
Integrating activities
WP4(a): Joint Research Activities

Coordinator of WP5

Programme managers of WP5.1, 5.2 and 5.3

(Group leaders of All participating clusters) in WP5.1, 5.2 and 5.3

ENSURES: Smooth Running of Inter- cluster activities

Chair person of IAB

REPORTS TO

Industrial Advisory Board (IAB)

REPORT TO

REPORT TO

REPORT TO 

REPORT TO

REPORT TO

REPORT  TO 

Figure 4.5 Flow chart showing the management of Integrated Activities(IA), Joint Research Activities (JRA),  Spreading Excelence (SE) and Managament Activities (MA) of DiNAMNITe NoE

Figure 4.6 List of Activities of DiNAMITe partners for the full duration of the project (Named coordinators and programme managers are subject to rotation through elections (see section B7)

Institution	

TYPE	Integrating
Activities  (IA)
(WP)	Joint Research
Activity (JRA)	Spreading
Excellence (SE)	Management
Activities (MA)	HUB for Activity:
(Person responsible
for the Hub)	
University of Essex	Coordinator
HUB	WP2/WP3/WP4	WP2(a)/WP3(a)/WP4(a)	WP5:
WP5.1/
WP5.2/
WP5.3	Project Coordinator:
Naci Balkan
WP4 
Coordinator: 
Mike  Adams	MA / SE / JRA / IA
(N. Balkan)	
Agilent Technologies	IP		WP3(a)	WP5.1/
WP5.3	IAB :  Daniele 
Bertone		
Akdeniz Univ.	PP	WP2	WP2(a)	WP5.1/
WP5.2/			
Bilkent Univ. 	PP	WP2/
WP4	WP2(a)/
WP4(a)	WP5.1/
WP5.2/			
Cumhuriyet Univ. 	PP	WP2/
WP4	WP2(a)/
WP4(a)	WP5.1/
WP5.2/			
Dokuz Eylul Univ	PP	WP2/
WP4	WP2(a)/
WP4(a)	WP5.1/
WP5.2/			
Helsinki Univ. of
Technol	HUB /
 CP	WP1
WP2	WP1(a)
WP2(a) 	WP5.1/
WP5.2/
WP5.3		JRA / IA 
Markku Sopanen  	
Imperial College	CP	WP1/ WP2/
WP3	WP1(a)/ WP2(a)/
WP3(a)	WP5.1/
WP5.2/
WP5.3			
Infineon 	HUB /
 IP 	WP1
	WP2(a) /
WP3(a)	WP5.1/
WP5.2/
WP5.3	IAB Chair: 
Henning Riechert	IA / JRA /SE/MA
(Henning Riechert)	
CNRS-INSA	HUB / 
CP 	WP2/
WP4	WP2(a)/
WP4(a)	WP5.1/
WP5.2/
WP5.3	WP2 Coordinator; Xavier Marie	IA/JRA/ SE/MA
(Xavier Marie)	
Istanbul Univ. 	PP	WP2	WP2(a)	WP5.1/
WP5.2/			
LAAS-CNRS	HUB /  CP 	WP1/
WP3	WP1(a)/
WP3(a) 	WP5.1/
WP5.2/
WP5.3	 	IA / JRA /SE
(Chantal Fontaine)	
LPN-CNRS	CP	WP1/
WP2/
WP3	WP1(a)/
WP2(a)/
WP3(a)	WP5.1/
WP5.2/
WP5.3	WP1 Coordinator:
Jean-Christophe Harmand		
Linkoping Univ.	HUB / 
CP	WP1
WP2	WP1(a)
WP2(a)	WP5:
WP5.1/
WP5.2/
WP5.3	WP5 
Coordinator:
Weimin. Chen

	IA / JRA /SE/MA
(Weimin. Chen)
	
Univ. Of App. 
Sciences, Munich	PP	WP2	WP2(a)	WP5.1/
WP5.2/
WP5.3			
Nanoplus, Gerbrunn 	IP		WP3(a)	WP5.1/
WP5.3	IAB: Johannes Koeth		
University of Marburg	HUB / CP/	WP1/
WP2/
WP3/
WP4	WP1(a)/
WP2(a)/
WP3(a)/
WP4(a)	WP5.1/
WP5.2/
WP5.3	Programme manager of 
WP5.2: Peter Klar	IA / JRA /SE
Peter Klar	
University
Politechnica Madrid 	PP	WP1/
WP2/
WP3	WP1(a)/
WP2(a)/
WP3(a)	WP5.1/
WP5.2/
WP5.3			
Royal Inst of Techno	CP	WP1
WP2	WP1(a)
WP2(a)	WP5.1/
WP5.2/
WP5.3			

Ruhr University 
Bochum	CP	WP2/ WP3	WP2(a)/ WP3(a)	WP5.1/
WP5.2/
WP5.3			
University of
Technology, 
Tampere	HUB / 
CP  	WP1/
WP3	WP1(a)/
WP3(a)	WP5.1/
WP5.2/
WP5.3		IA / JRA /SE/MA
Markus  Pessa	
Technical Univ. Lodz	PP	WP4	WP4(a)	WP5.1/
WP5.2/			
NIRDMP, Bucharest	PP	WP2	WP2(a) 	WP5.1/
WP5.2/			
Univ. of Montpellier	PP	WP2	WP2(a)	WP5.1/
WP5.2/
WP5.3			
Univ. of Erlangen	CP	WP2	WP2(a) 	WP5.1/
WP5.2/
WP5.3			
Univ. of Athens	PP	WP2	WP2(a)	WP5.1/
WP5.2/			
Univ. of Aveiro	PP	WP2	WP2(a)	WP5.1/
WP5.2/
			
Univ. of Bologna	PP	WP2	WP2(a)	WP5.1/
WP5.2/			
University of Bristol	CP	WP3/
WP4	WP3/(a)
WP4(a)	WP5.1/
WP5.2/			
University of Cadiz	PP	WP2	WP2(a)	WP5.1/
WP5.2/
WP5.3			
University of
Karlsruhe	CP	WP2	WP2(a)	WP5.1/
WP5.2/
WP5.3			
University of 
Liverpool	CP	WP2	WP2(a)	WP5.1/
WP5.2/
WP5.3			
Univ. of Nottingham	CP	WP1/
WP2/
WP3	WP1(a)/
WP2(a)/
WP3(a)	WP5.1/
WP5.2/
WP5.3			
University of Paul
Sabatier, 	PP	WP2	WP2(a)	WP5.1/
WP5.2/			
Univ. of ROMA	CP	WP2	WP2(a)	WP5.1/
WP5.2/
WP5.3	Programme Manager of 
WP5.3:
M. Capizzi		
University of 
Sheffield	HUB / CP/	WP1
WP2	WP1(a)/
WP2(a)	WP5.1/
WP5.2/
WP5.3		IA/JRA/SE
Mak Hopkinson	
Univ. of Strathclyde	HUB / 
CP	WP2/
WP3	WP2/(a)
WP3(a)	WP5.1/
WP5.2/
WP5.3	WP3 Coordinator: M. Dawson	IA/JRA/SE/MA
Martin Dawson	
Univ. of Surrey	CP	WP2/
WP3
WP4	WP2/(a)
WP3(a)
WP4(a)	WP5.1/
WP5.2/
WP5.3			
Univ. of Warwick	CP	WP2	WP2(a)	WP5.1/
WP5.2/
WP5.3	Programme manager of
WP5.1:
C. Mc Conville		
NMRC	HUB / 
CP 	WP2/
WP4	WP2(a)/
WP4(a)	WP5.1/
WP5.2/
WP5.3		IA/JA/SE
Eoin O’Reilly	
Wroclaw Univ. 
of Technol	PP	WP2
WP4	WP2(a)
WP4(a)	WP5.1/
WP5.2/
WP5.3

Intexys	IP		WP3(a)	WP5.1/
WP5.3	IAB J. Ch. Garcia		
Comlase NT AB	IP		WP3(a)	WP5.1/
WP5.3	IAB: C. Silfvenius		
Sacher 
Lasertechnik GmbH,	IP		WP3(a)	WP5.1/
WP5.3	IAB: J. Sacher		
EPICHEM ltd. 	IP		WP2(a)/
WP3(a)	WP5.1/
WP5.3	IAB : S. Rushworth		
CRHEA	PP	WP1
WP2/
WP3	WP1(a)
WP2(a)/
WP3(a)	WP5.1/
WP5.3			
FSM	PP	WP2	WP2(a)	WP5:
WP5.1/
WP5.2/			

B5- Description of the Consortium and Excellence of Partners

The DiNAMITe consortium consists of core, peripheral and industrial partners. Core partners (CP) are those which have made key contributions to the field in the areas of research listed in WPs 1-4 (section B.4), as documented by a large number of refereed publications and numerous invited talks at international conferences. These groups are already collaborating with each other in small clusters, and have recently attracted substantial research funding (see table 5.1). The activities of the core groups who brought forth these results will serve as an initial backbone to the NoE, and by sharing sample material, sample devices and know-how they will grant a high level of scientific quality from the very beginning. The peripheral partners (PP) will work under the technical management of the core partners and contribute to the technical programme, integration and spreading of excellence activities. Industrial partners (IP) who will contribute to the industrial advisory board provide access to facilities, supply of demonstrator devices, will provide secondment opportunities and participate in commercialisation activities. The “HUBs” will act as the nerve centres of the consortium where the coordination, management, integration, training, spreading of excellence activities will be concentrated. We also envisage the emergence of additional skills requirements during the course of the project. Therefore, we make the necessary budgetary provisions by setting aside a substantial budget for integrating new partners whenever required (see section B7).

Partner No	Company/Institution	TYPE	Recent National 
Funding  in 
relevant Research
	EXISTING COLLABORATIONS 
WITH CONSORTIUM
 PARTNERS 	
1	University of Essex	Coordinator
HUB	~300 KEuros	With many partners	
2	Agilent Technologies, Torino, Italy	IP	Industrial	20	
3	Akdeniz Univ. Antalya, Turkey	PP		1	
4	Bilkent Univ. Ankara, Turkey	PP	70 K Euros	5, 6, 1	
5	Cumhuriyet Univ. Sivas, Turkey	PP		1,4,6,12	
6	Dokuz Eylul Univ. Izmir, Turkey	PP		1,4,5,12	
8	Helsinki Univ. of Technol, Finland	HUB / CP	~1.0 M Euros	22	
9	Imperial College, UK	CP	~530 K Euros	10, 31, 38, 41	
10	Infineon , Muenchen, Germany	HUB / IP 	Industrial	With many groups	
11	CNRS-INSA, Toulouse, France	HUB / CP 	~200K Euros	1, 13, 14. 12, 26, 36, 50	
12	Istanbul Univ. Turkey	PP		1, 5, 34, 13,22	
13	LAAS-CNRS, Toulouse, France	HUB /  CP 	308 K Euros	1, 11,12., 14, 26,  36, 38, 44	
14 	LPN-CNRS, Marcoussis, France	CP	~420 K Euros	11, 13, 17, 20, 25, 43, 49, 50	
15	Linkoping Univ. Sweden	HUB / CP	~200 K Euros /year	18, 42, 10,37	
16	Univ. Of App. Sciences, 
Munich, Germany	PP	150 K Euro	10	
17	Nanoplus, Gerbrunn, Germany	IP	Industrial	43, 20, 26, 46	
18	University of Marburg, Germany	HUB / CP/	2.5 M Euros	10,15, 21, 22, 37, 40, 42	
19	University Polytechnic of 
Madrid, Spain	
PP	135 K Euros	38, 13, 49	
20	Royal Inst of Techno, Sweden	CP	350 K Euro/year	2, 14, 43	
21	Ruhr University, Bochum, Germany	CP	50 K Euros/year	18, 22, 40, 42, 46	
22	University of Technology, 
Tampere, Finland	HUB / CP  	540 K Euros	With many groups 	
23	Technical Univ. Lodz, Poland	PP	15K Euros/year	1,10,11,22,25,31,37	
24	NIRDMP, Bucharest, Romania	PP	100K Euros		
26	Univ. of Montpellier, France	PP		14, 49	
27	Univ. of Erlangen, Germany	CP	From DFG	10, 32, 46, 34,36	
28	Univ. of Athens, Greece	PP	80K Euros	1, 31	
29	Univ. of Aveiro, Portugal	PP		1, 39, 36	
30 	Univ. of Bologna, Italy	PP	35 K Euros	37, 25	
31	University of Bristol, UK	CP	~1.2 M Euros	22, 39,	
32	University of Cadiz, Spain	PP	51 K Euros	27, 38	
33	University of Karlsruhe, Germany	CP	62 K Euros	39,10	
34	University of Liverpool, UK	CP	~4.2 M Euros	27, 1, 10, 11, 12, 13	
35	Univ. of Nottingham, UK	CP	~1.9 M Euros	10, 25, 38, 42, 37	
36	University of Paul-Sabatier, 
Toulouse, France	PP	110K Euros	27, 11. 13, 29, 14, 50	
37	Univ. of ROMA, Italy	CP	75 K Euros	30, 15, 18, 25,35	
38	University of Sheffield, UK	HUB / CP/	EPSRC ~ 4.5 M Euros	13, 19, 32, 35, 41	
39	Univ. of Strathclyde, Glasgow, UK	HUB / CP	~1.3 M Euros	10, 22, 31,1, 38, 40, 48	
40	Univ. of Surrey, GuildfordUK	CP	~930 K Euros	10, 18, 22, 25, 39, 42	
41	Univ. of Warwick,UK	CP	~210 K Euros	38, 9, 42	
42	NMRC, Cork, Ireland	HUB / CP 	1.2 M Euros/year 	41, 40, 10, 35, 21, 10, 15	
43	Wroclaw Univ. of Technol. Poland	PP	68 K Euros	14, 17, 20, 22, 25	
44	Intexys, Labege, France	IP	Industrial	13	
45	Comlase NT AB, Stockholm, 
Sweden	IP	Industrial		
46	Sacher Lasertechnik GmbH,
 Marburg, Germany                     	IP	Industrial	21, 27	
47	EPICHEM ltd. Wirral, UK	IP	Industrial	Many Groups	
49	CRHEA_CNRS, Velbone, France	PP	118 K Euros	14, 19, 26	
50	Faculte des Sciences de Monastir	PP	40 K Euros	11, 14, 36	

Table 5.1 Current funding of and the existing collaborations between consortium partners

InN STREP	
COST 288	
Laser STREP	
STREP (GIFT 2)	
IP (PHIDES)	
STREP (MICADO)	
STREP (CLERMONT)	
TEMs  NoE 	
NoE (SANDIE)	
NoE (FENIKS)	
LOCAL ACCESS STREP	

Table 5.2 Other Research and Networking Projects within FP6, with which consortium partners are/will be involved. Bold characters are project acronyms.

In Table 5.1 we summarize the recent funding received by the consortium partners for research projects, in areas relating to DiNAMITe and the existing collaboration between the partners. In Table 5. 2 we show the STREP, IP, and NoE’s that the consortium partners are either already involved or in the process of setting up within FP6. The tables demonstrate clearly the credibility and excellence of the consortium partners. There is a hub of activity, some are by individual groups, and some are in small clusters. However, despite the success of individual groups or clusters there is lack of the critical mass to make significant progress towards commercialization of the Dilute Nitride technology. With the current complexity of research, the progress cannot be made with optimum efficiency and a larger forum, where the structuring and integration of research is well-established, is necessary. Thus, the more established groups can work closely together, as some of them have been doing, but more and more groups can be integrated to carry out more in-depth or more specialised research and to extend the work into new fields of applications
In summary coordinated effort on the European level is highly justified for the following reasons:
•	The proposed NoE will bring researchers from the groups, tabulated in Table 5.1, together effectively 
•		Within the NoE, the most relevant and urgent questions for research can be condensed through discussions; consequently coordinated key action can be outlined. 
•		The  NoE will facilitate efficient sharing and development of expertise and facilities that have otherwise been rather scattered over different groups in Europe with only a limited access.
•		A coordinated proceeding between theoretical and experimental work can be instigated.
	Rapid transfer of basic research work into device design, modeling and device fabrication will be possible. 

Contributing Partners

Coordinating Partner

No.1: University of Essex, UK (HUB for coordination and training)
 The photonics group at the University of Essex in the department of Electronic Systems engineering currently comprises 6 full time academic staff, 2 part time academic staff, 7 research assistants, 26 research students and 4 technicians. The Group has a track record of leading-edge research over the entire field of Photonics, including physics, materials, devices, systems and networks. The Photonic Networks laboratory undertakes research into the application of photonics in future telecommunications and non-telecommunication networks.  In particular the application of packet & burst switching to telecommunications and GRID networks.  GRID infrastructures require very demanding performance, eg >40 Gb/s, low latency, network topologies driven by the user rather than the operator etc. The Optical Transmission Systems laboratory is concerned with theoretical and practical analysis of optical fibre and passive devices such as fibre Bragg gratings and photonic crystals.  Currently the application of a range of techniques and photonic devices to access and metro network design are being investigated. Research in the Lasers and Nonlinear Optics laboratory includes semiconductor optical amplifiers, vertical cavity surface-emitting lasers, tuneable lasers and non-linear dynamics of lasers, as well as more fundamental work on quantum-optical effects in attenuating or amplifying media. The Optoelectronic Materials and Devices laboratory is concerned with optical characterization of novel photonic materials; hot electrons and instabilities in low dimensional semiconductors; and novel optoelectronic devices based on dilute nitrides and In rich GaInN. In the High Speed Optoelectronics laboratory the research ranges from fundamental studies of new materials to the development of novel photonic devices and semiconductor laser systems. The photonics group has attracted over 2.5 M. Euros of funding for research and training over the last 5 years. The parts of the group which will be integrated are Materials and Devices headed by N. Balkan, High Speed optoelectronics, headed by Dr. A, J. Vickers, and Lasers and non-linear optics, headed by Professor M. J. Adams.
The coordinator, Professor Naci Balkan gained his PhD from the University of Glasgow in 1980 in the field of Low Frequency AC loss Amorphous Semiconductors. He continued with research in amorphous semiconductors until 1983 and published widely on AC loss in amorphous Si and Ge. Between 1980 and 1983 he worked as a lecturer at Hacettepe, and Bogazici universities in Turkey. He joined the semiconductors group at Essex as a senior research officer in 1984, where his research interests moved to hot-electron transport, optical spectroscopy and instabilities in low dimensional III-V material systems such as GaAs/ GaAlAs and GaInAs/GaAs quantum wells. In 1990, he became a lecturer and established his own research group in semiconductor optoelectronics. The application of hot-electrons in optoelectronic devices became the focal point of his interest. This research led to the discovery of hot-electron vertical cavity surface emitting lasers (HELLISH - VCSEL) and top-hat HELLISH for wavelength conversion and amplification. He is also engaged in the study of novel material systems for applications in optoelectronic devices, including GaN, GaInAsN, and GaInAsP for displays, lasers and detectors. He has participated in over 25 national and international projects as either principal investigator or co-investigator, or consultant with funding from a wide range of sources including: EPSRC, NATO, TUBITAK-Turkey, the British Council, the European Commission and the Royal Society. He has organized 7 international research workshops and 4 summer schools all in the fields of semiconductors and optoelectronics.  He has published over 120 research papers, book chapters and edited two reference books. He is the author of one popular science book.  He is currently chairing the “Novel Gain Materials and Fabrication Techniques” Work package of the COST 288 programme. He is a fellow of the IOP and a member of EPSRC Review College.

Number 14: (LPN/CNRS), France (Core Partner)
Group Leader: Jean-Christophe Harmand

Jean-Christophe Harmand was born in Paris in 1959. He obtained his Ph.D. in physics at the University of Paris 7 in 1988 for his work on GaAlAs/GaAs HBTs.  From 1988 to 1990, he was at the Optoelectronic Research Laboratory of Matsushita (Osaka, Japan) where he was involved in studies on metamorphic AlGaInAs/GaAs HEMTs. From 1990 to 1999, he was engaged in III-V growth for micro and opto-electronics at CNET/France Telecom. Since 2000, he conduct epitaxial growth research at LPN/CNRS. He is author and coauthor of  more than 150 papers and communications in the III-Vs material and device fields.   Current research activities in the group are:
Epitaxial growth of III-V-N on GaAs (GaNAs, GaInNAs, GaNAsSb, GaInNAsSb)
and their structural analyses.  1.3µm and 1.55µm lasers on GaAs (recent demonstration of GaInNAsSb laser emission at 1.5µm with 3.5kA/cm2 threshold current density). 1.3µm GaAs-based VCSELsGaNAsSb HBT. Transport in GaNAs modulation doped heterostructure. VFF calculations in dilute nitrides 
The group has the following research facilities available: 
Growth facilities: 3 MBEs, 1 MOCVD
Process facilities: 800m2 clean rooms, Photolithography, Electron beam lithography, RIE, RIBE, metal and dielectric deposition …
Characterization: X-ray diffraction, TEM, Raman spectroscopy, Photoluminescence, Photocurrent, FTIR.

Number 15: Linköping University, Sweden  ( HUB for characterization, Core Partner)
Group Leader: Prof. Weimin Chen, Assoc. Prof. I A Buyanova

Prof. W M Chen has a strong record in characterization of a variety of semiconductors, in particular optical and spin-dependent processes by optical and magnetic resonance techniques (more than 300 international publications, a number of recent invited talks and book chapters). He is the director of the SIMARC Center, a Nordic Center of Excellence in magnetic resonance techniques. Recently he has expanded his activities into spintronic materials and quantum structures, and he is developing an optical and spin-sensitive nano-probe instrument for nano-scale optical characterization and spin manipulation. He recently organized a symposium at the 2002 E-MRS Spring Meeting on N-containing III-V-nitrides and is the program committee chairman of the ICDS-22 (2003), which is strongly connected with the research program of this NoE. Assoc. Prof. I A Buyanova is very experienced in materials and optical studies of semiconductors. She is the author of more than 170 scientific publications. She has recently focused on dilute III-V-nitrides, and has gained wide international recognition reflected by many recent invited talks and book chapters in this field. She together with W M Chen are authoring a book on “Physics and applications of dilute nitrites” (Taylor&Francis, 2003). She is organizing a symposium of the MRS 2003 Fall Meeting on “Progress in Semiconductor Materials III: Electronic and Optoelectronic Applications
Excellent research facilities are available in the group. These  include: Growth, Structural characterization techniques, Optical characterization techniques, Magnetic resonance and cyclotron resonance techniques, Electrical characterization: Hall effect, DLTS < 700 K and Processing laboratory.
Materials under study in the group are : 	
Ga(In)NAs, Ga(In)NAs/GaAs QW on GaAs substrate
GaNP, GaNP/GaP QW on GaP substrate
GaPN and GaAsPN on Si substrate

Number 27: Universität Erlangen-Nürnberg, Germany (Core Partner)
Group Leader: 	Prof.H.P.Strunk
The Institute of Microcharacterisation in the Department of Materials Science and Engineering at the University of Erlangen is active in the correlation of the real structure and the electronic and optical properties of a broad spectrum of semiconductor materials. Since the structure is  determined essentially on the atomic level of the crystal lattice, the group employs especially combinations of techniques with high spatial resolution based on transmission electron microscopy, scanning probe microscopy, Raman spectroscopy, and related computer scientific approaches for simulation and analysis. Of special importance for the present project are recent activities in the group-III-nitrides, in which structural, chemical, electronic and optical properties are collected from the same site of a specimen in nanoscopic dimensions in an analytical electron microscope. 
Research facilities available:
- High resolution transmission electron microscope Philips CM 300 UT (300 kV, point-to-point resolution 0.17 nm), equipped with CCD and on-line image analysis (Fast Fourier Transform FFT);
- Analytical (scanning) transmission electron microscope Philips CM 30 T/STEM (300 kV, point-to-point resolution 0.23 nm) equipped with Energy Dispersive x-ray analysis (EDS), Electron Energy Loss spectrometry (EELS), Cathodoluminescence spectroscopy (CL, 1800 to 180 nm, specimen temperature 10 to 300 K and beyond), in addition to all types of standard specimen holders one for electron beam induced current (EBIC, four electrical contacts) and one for reflection electron microscopy;
- Scanning probe microscopes (atomic force, lateral force, scanning tunnelling) ambient and UHV;
- High Resolution Raman-Microspectrometer, excitation with HeNe- and Argon-Ion lasers (633, 514, and 488 nm wave length). 

Number: 8 Helsinki Univ. of Technology, Finland (HUB for growth and fabrication, Core Partner)
Group Leader: Docent, Dr. Markku Sopanen (OEL)
Dr. Sopanen, Markku Antero, born May 11, 1964, Helsinki, Finland.
Dr. Tech., HUT, May 1997. Docent, Physics (optoelectronics), Nov. 2002.
Research associate in HUT since Jan 1998; visiting scientist, University of California San Diego Jan 1999-Aug 1999; Academy fellow, Academy of Finland, Oct 2000–Jul 2001.
45 articles in international refereed journals (2 Phys. Rev. Lett., 5 Phys Rev. B, 12 Appl. Phys. Lett).
Current Research activities relevant to the proposed networkactivities are:Ga(In)NAs growth by
Atmospheric MOVPE, high-content GaAsN, opticalspectroscopy of Ga(In)NAs, GaInNAs quantum well 
and quantum dot structures, positron annihilation spectroscopy of defects in dilute nitrides, GaInNAs
SESAM, GaInNAs laser.HUT, OEL is prepared to collaborate within the network in fabricating samples for other groups. OEL has expertise in the growth high-nitrogen-content GaAsN (up to 5.6 %) and GaInNAs (up to 4.5%) with an atmospheric pressure 1" reactor. Also GaInNAs quantum wells and quantum dots have been fabricated. GaInNAs QW lasers at 1.15 microm have been fabricated. In addition, OEL has just acquired  a new vertical 3*2" reactor operating at low pressure. This reactor is suitable for the preparation of wafers for device fabrication. The development work for a novel SESAM structure based on GaInNAs has already been started. HUT, OEL is also ready to cooperate in characterization of samples made at other groups. OEL has high resolution X-ray diffractometer (Philips X'pert), extensive optical spectroscopy (PL, microPL, magnetoPL, time-resolved PL), AFM and access to SEM and TEM. OEL would like to collaborate with groups concentrating either on material studies or on fabrication of devices.

Research facilities available:Two MOVPE reactors (max. wafer size 4” or 3*2”), positron annihilation
spectroscopy (3 low-energy beams and 3 systems for bulk materials), AFM, HR-XRD, PL, PLE, time
resolvedPL, magneto-PL, micro-PL, DLTS, clean room (class 100-10000), process equipment to fabricate
simple components like oxide-stripe lasers, access to Hall, SEM, TEM, FTIR, e-beam lithography

Number 9: Imperial College, UK (Core Partner)
Group Leader: Prof Tim Jones
Professor Tim Jones is Head of the Electronic Materials Section in the Department of Chemistry at Imperial College and Director of the multi-disciplinary Centre for Electronic Materials and Devices. He is also a member of the Executive Committee of the London Centre for Nanotechnology. Professor Jones obtained his PhD from the University of Liverpool in 1988 and worked as a postodoctoral research assistant at the same university until 1990. He was appointed as a Lecturer at Imperial College in 1991 and promoted to Reader and Professor in 1997 and 1998 respectively. His research is focused on controlling the growth and properties of semiconductor nanostructures for optoelectronics and he has published about 180 papers in the general area of surface science, epitaxial growth and semiconductor materials. He is also the author of 2 patents

Current Research activities relevant to the topic of the network: MBE growth of dilute nitride GaAs based
semiconductor materials. STM studies of GaInNAs growth by MBE. Local vibrational mode and SIMS
studies of GaInNAs. GaInNAs optoelectronics; lasers, amplifiers and modulators
Research facilities available: MBE growth of GaInNAs. Materials characterisation – in-situ STM, LVM-IR,
SIMS depth profiling, TEM, AFM. Optical and optoelectronic characterisation – PL, PLE, EL. Device
Modelling

Number 16: Munich Univ. of Applied sciences, Germany (Peripheral Partner)
Group Leader:	Prof. Dr. Hans Christian Alt

The group is currently working on the FTIR investigation of nitrogen in (In)GaAsN layers by local vibrational mode spectroscopy. Model development for nitrogen incorporation. Influence of technology parameters / annealing procedures.
We have the following research facilities available:
High-resolution FTIR spectrometer (6-300 K, FIR capability, uniaxial stress accessory)
PL equipment (2-300 K, 600-1600 nm)
Our group is interested in contributing to the consortium with the characterization of dilute nitride layers by infrared absorption measurements (FTIR). In particular, the local mode spectroscopy turned out as a non-destructive and easy-to-use technique to assess quantitatively with high sensitivity the substitutional nitrogen fraction in GaAsN layers grown by MBE and MOCVD (x<0.05). We want to extend this work to quaternary layers (InGaAsN etc) with a particular focus on nitrogen-group III interactions and possible nitrogen pairing or clustering. For this purpose, the availability of epitaxial material of different composition, grown by different growth techniques/annealing is necessary. 

Number 19: Universidad Politecnica de Madrid, Spain (Peripheral Partner)
Group Leader: Dr. Adrian Hierro
Adrian Hierro was born in Madrid, Spain, in 1971. He received the B.S. degree in physics from the Universidad Autonoma de Madrid, Spain, in 1994, and the M.S. and Ph.D. degrees in electrical engineering from the Ohio State University (OSU), USA, in 1998 and 2001, respectively.
At OSU his research was devoted to the field of III-nitrides under a collaboration with the University of California at Santa Barbara, dealing with the characterization of electrically active defects in bulk GaN grown by MBE and MOCVD. In 2002, he joined the Universidad Politecnica de Madrid, Spain, as a Research Scientist. He is author or co-author of 15 publications, 14 contributed communications in international conferences, and is scientifically in charge of a EU project (GINA 1.5) on InGaAsN for infrared light emission. Current Research activities in our group, which are relevant to the network are:
MBE growth of InGaAsN QWs on (100) and (111)GaAs. Understanding the basic electronic properties of InGaAsN with high In and N contents. Investigation of the impact of RTA on structural properties and light emission/absorption of InGaAsN. Modelling InGaAsN/GaAs  QW band structure and material absorption and gain, and laser diode gain. Design, growth and characterization of InGaAsN-based edge emitting LDs for long wavelength (1.3-1.55 μm) applications. Design, growth and characterization of InGaAsN-based QW infrared photodetectors (QWIPs) for near and mid-infrared wavelengths. Development  technology for InGaAsN-based LDs and QWIPs
We have a wide range of research facilities available: MBE Technology (RIBER 32 + MECA 2000 both with RF plasma sources, dedicated to nitrides and arsenide/dilute nitrides, respectively). Fully equipped Processing, Morphological and structural characterization, Electrical characterization, Optical characterization facilities.

Number 4: Bilkent University, Turkey (Peripheral Partner)
Group Leader: Professor A. Aydinli
Born May 16,1953, Ph.D. University of Virginia, Thesis topic: Auger Analysis of Pt/GaAs  Schottky Diodes, Associate Professor 1984, Professor  1991. Currently professor of physics at Bilkent University physics department. Research interests: Raman, photoluminescence and absorption spectroscopy of semiconductor heterostructures, low dimensional systems,  laser-material interactions, design and realization of semiconductor lasers and integrated optical waveguide devices.

There are several areas of interest in our group:  On the experimental side, optical and electrical charaterization using Raman, photoluminescence and IR and VIS absorption spectroscopy and thermally stimulated current measurements on low dimensional systems such as quantum wells and quantum dots. We are also well posed to perform modulation reflectance spectroscopy and high precision refractive index measurements. Work on photonic devices such as lasers, modulators and WDM devices is also continuing. On the theoretical front, our group has been involved in many-body and disorder effects in bulk and low-dimensional semiconductors. Another on-going research is on the high-field transport in wide bandgap semiconductors based on the full-band and ensemble Monte Carlo techniques. Quite recently, ab-initio band structure computations have been favoured for the transport as well as linear and nonlinear optical characterisations.

Number 30: University of Bologna, Italy (Peripheral Partner)
Group Leader:  Professor Federico Boscherini
Federico Boscherini is Associate Professor of Physics at the University of Bologna, Italy. His main research interest lies in the application of synchrotron radiation techniques to the study of the structure of advanced materials. He is author of more than 100 research papers and is a referee for Physical Review Letters, Physical Review and other major journals. He is one of the proposers of the Italian beam line at the European Synchrotron Radiation Facility and co-chairman of the series of symposia on Synchrotron Radiation and Materials Science at the European Materials Research Society Meetings.
 Our group’s expertise is in the Synchrotron Radiation X-ray Absorption Spectroscopy (XAS) and related techniques, and X-ray diffraction. We have reported on XAS measurements at the In, Ga and N edges on samples deposited both by the Würzburg group and by Mariette (Grenoble). A High resolution XRD study of the effect of hydrogenation has been performed.

Number 31: University of Bristol (Core Partner) 
Group Leader: Dr. Judy Rorison

Current Research activities relevant to DiNAMITe NoE are: Gain modelling and dynamical
modelling: small and large signal modulation response modelling. Gain measurement, I-V,
L-I, near and far field optical measurement, temperature controlled T0 measurement.Studies
of edge-emitting lasers and VCSELs.  Investigation of systems using a 43G BERT testing
set-up.   We have temperature controlled L-I, clean room and fabrication, focussed Ion-Beam, and 
43 Gbit/s BERT testing facilities and we intend to contribute to the consortium in all of the
listed current activities. 

Number 40: University of Surrey, UK (Core Partner)
Group Leader: Prof. Alf. R. Adams

Current Research activities relevant to the topic of the network are:
 High pressure studies of semiconductor materials, lasers and other optoelectronic devices. Fast pulse studies and carrier dynamics in semiconductor materials and devices. Electrical and optical characterisation of semiconductor materials. Fabrication and characterisation of semiconductor lasers and devices. Modelling of semiconductor materials and lasers. Current group interests extend from GaN based materials for blue-green applications, red VCSELs for plastic optical fibre communications, near infra-red lasers for signal sources and high power pump lasers in data-/tele-communications systems to inter-band and intra-band sources in the mid infra-red.
The group has the following research facilities available: High pressure studies of
semiconductor materials and lasers. Fast pulse studies of semiconductor materials and devices. Electrical and optical characterisation of semiconductor materials. Fabrication and characterisation of semiconductor lasers. Modelling of semiconductor materials and optoelectronic devices
Number 42: NMRC, Ireland (HUB for modelling and training, Core Partner)
Group Leader: Professor Eoin O’Reilly

Current Research activities relevant to the topic of the network are: Tight-binding and
k.p models of the electronic structure of dilute nitride alloys. Theory of gain and recombination processes in dilute nitride materials and devices and fabrication and characterisation of GaInAsN active devices. The group has funding from Science Foundation Ireland programme on “Physics of next generation photonic materials for ICT applications” (€1.2m per year for 5 years). 
The group has the full device fabrication, material and device characterisation facilities together with cluster-based computer system and a suite of relevant software programs. It intends to make the following contributions to the activities in DiNAMITe NoE: Fundamental theoretical investigations of electronic structure of bulk and low-dimensional dilute nitride alloys. Calculation of electronic structure and gain characteristics of dilute nitride media and design, fabrication and characterisation of active devices

Number 49: Centre National de la Recherche Scientifique, France (Peripheral Partner)
Group leader Dr. Benjamin Damilano 

Benjamin Damilano was born in France, in 1975. He received the Ph.D. degree in 2001 from the university of Nice, France. Before joining the CNRS-CRHEA laboratory as a researcher in 2002, he worked in Picogiga. He was engaged in the MBE growth of (Ga,In,Al)N materials (quantum dots, light emitting diodes, HEMTs). His research is now focused on III-V dilute nitride semiconductors and their application in optoelectronics. 
CRHEA is a non profit making government research laboratory and has growth facilities: RIBER 32P MBE system, characterization facilities: PL, PR, SPL, AFM, HRXRD, TEM, MEB, and process facilities.
In the diluted nitrides field, the CRHEA activities are centered around the material growth by Molecular Beam Epitaxy. The lab is involved in several applied research programs such as 1.55 µm laser or photovoltaic solar cell devices. We intend to integrate all these activities within the NoE.

Number 5: Cumhuriyet University, Turkey (Peripheral Partner)
Group Leader: Prof. Y. Ergun

Our contribution to the network will be theoretical modelling of physical properties of Dilute Nitrides.
These include the following:
1- Band Calculations of Low-Dimensional Heterostructures:
The theoretical and computational studies of the electronic band structure, density of states, effective mass, scattering time constants will be calculated as a function of the composition for different low-dimensional heterostructures by the pseudo potential and k.p method. 
2- Optical Transitions Involving Impurities and Excitons in Semiconductors under intense, high-frequency laser field Laser Field:
3- The Photoionization Process in Quantum Dots and Well-Wires Under External Fields:
4- Confined LO-phonon effects on the impurity binding energy in a quantum dot structures.
5- Effects of Hydrostatic Pressure and External Fields on Excitons and Impurities in Low-dimensional Heterostructures
6- Ab-initio Bulk Bandstructure Techniques
Our aim is to couple our research efforts mentioned in previous items to ab-initio techniques for the electronic and optical characterisation of III-V compounds.
 
Number 28 University of Athens, Greece (Peripheral Partner)
Group Leader: Prof. George Papaionnou
Dr. George Papaioannou joined University of Athens in 1975. Since 1996 he is Associate Professor at the Solid State Physics Section of Physics Dpt of UoA. His research activities cover the following areas:
III-V compound semiconductors: Investigation of transport and optoelectronic properties III-V (III-N) compound materials and devices.SOI materials and devices: Investigation of electrical properties of the buried oxide layer and its interfaces in SOI structures and devices.
Radiation reliability of III-V compound materials and devices that covers the degradation induced by electron, neutron and heavy ions irradiation in semiconductors and semiconductor devices.
The research activities resulted in 49 published research papers and 75 conference presentations.
We are currently involved in activities in the following fields:  Investigation of transport parameters of III-N-V semiconductors through conductivity and Hall effect measurements (15K to 300K). Photoconductivity (PC) and photo-Hall effect (15K to 300K and 0.3μm to 3.5μm. DLTS and PITS, complementary, assessment to determine the majority and minority carrier traps. For PITS the optical excitation will be performed with intrinsic illumination (650nm, 780nm and 820nm) as well as with extrinsic illumination (960nm and 1060nm)

Number 6: Dokuz Eylül University, Turkey (Peripheral Partner)
Group Leader: Professor Ismail Sokmen

Current Research activities relevant to the topic of the network: Band Structure calculations of dilute nitrite
compositions, Stark Effect in GaAlAs-GaNInAs heterostructure quantum well, Intense field effect, density
of state  calculations, exchange correlation effect on subband population and mobility calculations.
Planned research to contribute to the activities in ‘DiNAMITe’Network: Band Structure calculations of
Dilute nitrite compositions, Stark Effect in GaAlAs-GaNInAs heterostructure quantum well, Intense field effect, density of state  calculations, exchange correlation effect on subband population and mobility calculations.We also wish to offer our conference and meeting facilities to the consortium for the organization of training activities.

Number 34: University of Liverpool (Core Partner)
Group Leader:	Professor Paul R. Chalker

Current Research activities that we wish to integrate within the network are: 
Growth of GaInNAs and GaAsN by MOMBE and MBE, Characterisation using (S)TEM, (including Energy Loss Spectroscopy and Energy Dispersive x-ray analysis), Raman spectroscopy, reflectivity and anisotropy measurements Growth of GaInNAs and GaAsN by MBE and MOMBE; in-situ monitoring of growth by optical
reflectivity and reflection anisotropy  spectroscopic ellipsometry. Manufacturing and post - processing of dilute nitride materials and device structures.

Research facilities available:
VG80H Chemical Beam Epitaxy faciliity, CVT Omicron MBE system, STS Cluster tool for the processing
Of III-V semiconductors. New RS / Wolfson clean room facilities. NW Super STEM project and NW
Regional STEM (VG601). Renishaw Raman system (Compact 1000)

Number 36: Université Paul Sabatier, France (Peripheral Partner)
Group Leader: Prof. Adnen Mlayah

The Solid State Physics laboratory of Toulouse at Paul Sabatier University will contribute to the activities in “DiNAMITe” network through its expertise in the experimental and theoretical studies of vibrational and electronic properties of nitrogen based semiconductor systems.  Our laboratory can be considered as the “Phonons center” of the network. Phonons (both optic and acoustic) will be used as dynamical probes of the nitrogen incorporation and its effects on the electronic and optical properties of nitrogen diluted arsenide structures. 
The Solid State Physics laboratory of Toulouse at Paul Sabatier University has more than ten years experience in optical spectroscopy of low-dimensional and nano-structured semiconductor systems (quantum wells, wires, dots). Various optical techniques including light scattering spectroscopy (both resonant and non-resonant Rayleigh, Brillouin and Raman scattering) are available. A special attention is paid to high spatial (micro-Raman and micro-PL) and spectral resolution techniques. The experimental facilities consist of 6 set-ups equipped with the most advanced technologies in optical excitation, dispersion and detection.  

Number 26:    University of Montpellier, France (Peripheral Partner)
Group Leader: Dr Thierry TALIERCIO
Dr Taliercio was born in 1970. In December 1998, he defended successfully a PhD thesis entitled "Excitons and Trions in Quantum Heterostructures Based on Fractional Monomolecular layers of CdTe and ZnTe." He is currently Lecturer at the University of Montpellier II, involved in the teaching of General Physics and the Physics of Semiconductors and Electronic Devices. His current research is on continuous wave and time-resolved optical properties of thin layers and low-dimensional structures based on narrow band-gap nitride semiconductors. Actually he developed confocal microscope for quantum dots optical properties investigation. Dr Taliercio is co-author of 18 regular papers and of 33 conference papers

Current Research activities relevant to the topic of the network:
Continuous-wave, piezo-modulated and time-resolved spectroscopy of low-dimensional structures based on wide- and small-band-gap III-nitride semiconductors. Envelope function calculations of excitonic properties.
Recent status: Measurements of time-resolved photoluminescence from N-multiplet states in low-[N] GaAsN epilayers on GaAs substrates. Study of residual strains in low-[N] GaAsN epilayers on GaAs substrates. Preliminary theoretical calculations of subband structure in GaAsN/GaAs quantum wells.
Research facilities: Standard equipment for reflectivity, absorption, photoluminescence, piezo-modulated spectroscopy. Ar++ lasers, HeCd laser, picosecond/femtosecond Ti-sapphire laser (frequency doubled and tripled), nanosecond YAG laser (frequency x2, x4 and x5). Time-resolved setup with streak camera: time resolution ~10 ps, detectivity from 1.35 to 4 eV. Cryogenic facilities: T = 2K to room temperature. FTS.

Number 3: Akdeniz University, Turkey (Peripheral Partner)
Group Leader: Prof. B. Ulug
Bülent Ulug obtained his BSc in Physics in 1976 from Hacettepe University, Ankara and 
 Ph.D from the  University of Edinburgh in 1982.  His research interests are: Percolating Systems and Percolation Theory, High Tc Ceramic Superconductors, Fullerenes, Instrumentation and Photoluminescence & Electroluminescence studies from dilute nitride structures.
We are currently collaborating with group number 1 in the determination of N content in GaInAsN by IR
Spectroscopy. We plan to contribute to the activities in ‘DiNAMITe’Network in optical and electrical characterization of material grown with MBE and MOVPE to compare the merits and the deficiencies of either of the techniques. We have and FTIR, Elipsometer System and a variable temperature cryostat with optical access for operation between liquid helium and room temperature. 

Number 2: Agilent Technologies, Italy (Industrial Partner)
Group Leader: Dr. Daniele BERTONE  

Current Research activities relevant to the topic of the network:
 Modelling, Epitaxy, Material Characterisation, Device Fabrication and Device Characterisation aimed to develop advanced optoelectronic devices.
Planned research to contribute to the activities in ‘DiNAMITe’Network:
Material Characterisation: planar single layers  and/or lattice mached and strained MQW device structures,
DeviceCharacterisation
Research facilities available:
Material Characterisation: Structural characterisation using HRXRD (High Resolution X-Ray Diffractometer), micro-Photoluminescence bench, Absorbance measurements, Hall measurements, C-V profiler, SEM.
Device Characterisation: Static and dynamic characterisation benches for small and large signal device analysis.

Number 32: University of Cádiz, Spain (Peripheral Partner)
Group Leader: Prof. Dr. Rafael García Roja

We are currently working with Dr. Mark Hopkinson (GROUP 38) in the characterization by electron microscopy techniques of several InGaAsN quantum wells structures grown on different conditions. Our first studies were made on strain balanced structures using different GaAsN barriers grown at relatively high temperatures. The use of smaller growth temperatures for GINA quantum wells has revealed a significant improvement of the interface corrugation that permits us to obtain emission wavelengths in the range of 1.5 µm. We intend to integrate our group’s current work on physics and characterization of semiconductor compounds. We possess an important set of transmission and scanning microscopes for the structural study of the materials.  Research facilities available:
A number of transmission and scanning electron microscopes together with various electronic and optical stations for characterization which gives us the capability of structural chemical and strain characterization  as well as cathodolumiscence and electron beam Induced current, and local optical and electrical properties. 
		
Number 44:  Intexys, FRANCE (Industrial Partner, SME)
Group Leader: J.Ch. Garcia

Currently we have the following research activities relevant to the network:
VCSEL 1.31µm based on GaInAsN, interconnecting technologies for high speed operation (10GBit/s and higher) and large density arrays.

We plan the following future integration activities in the network: Hybridization technologies for 131 VCSELs arrays, CWDM 131 VCSELs. OE integration

Number 45: Comlase NT AB, SWEDEN (Industrial Partner, SME)
Group Leader: Christofer Silfvenius
Comlase NT's core technology is facet handling and protection, for lifetime and high power (>>W) issues, demonstrated on 600-1000nm range materials by forming native nitride on semiconductor (GaAs, AlAs, InP) facets. We are looking for a source of nitride-based devices to demonstrate our technology also in that material system. Comlase NT has today also its own device process utilized for developing the mirror-damage-protection coatings. Comlase NT, currently collaborates with researchers at KTH (Sweden) and the Noise Research Laboratory in Vilnius
We plan for future integration activities the following:
Find, by us untested, materials or device supply - to expand the evaluation of our native nitride films over a wider materials range. Engage materials researcher for detailed evaluation of our thin native nitrides (STM or other detailed evaluation). We can help with device testing, life testing, modeling etc.

Number 46: Sacher Lasertrchnik GmbH, Germany(Industrial Partner, SME)
Group Leader: Dr. Joachim R. Sacher

Currently we have the following research activities relevant to the network:
1.	External Cavity Quantum Cascde Lasers (BMBF FK13N8020)
2.	Technical Application of Nonlinear Dynamics (BMBF FK 13N8062)
3.	Mode-locking External Cavity Laser Sensor (BMBF FK 13N8318)
We have been collaborating with Nanoplus GmbH: Cooperation within the Quantum Cascade Laser Project, funded by the BMBF. We wish to integrate/contribute the following activities in the NoE: Antireflection coating and testing of Dilute Nitride-Arsenide-Materials in external cavity configurations. Application of Dilute Nitride Arsenide External Cavity Diode Lasers in Spectroscopy and Process Control.

Number 47: Epichem Limited (Industrial partner)
Group Leader:  Dr Lesley Smith

We have collaborated with most of the MOVPE/MOMBE growth teams as precursor suppliers and also others as partners in various EU projects.  In particular these include Bookham, Fhg-Angewandte, Infineon, Agilent, NMRC and the universities of Liverpool, Sheffield, Nottingham, Helsinki, Tampere, Montpellier, Strathclyde Surrey, Aviero, Erlangen.  In a few cases the groups we have worked with are not the same as the contacts provided in the proposal but closely related ones.  Our collaborations have all related to development of improved source materials and optimization of deposition processes.  In the particular area of dilute nitrides we have worked with partners 12, 44 and 45 and are also developing links with 9,10,30 and 39. In the field of commercial precursor supply Epichem is recognized as the world leader for innovative products and our aim is to develop precursors suited to all processes.  With this in mind we need to work with all users to identify the best chemicals and the purity requirements to allow the required specification layers to be grown.  Future integration activities will be to discuss precursor requirements with all growth teams and highlight areas that need development to reach their goals.  Source combinations and usage parameters can be advised and feedback on growth performance used to enhance the precursor system.  Once a defined specification has been established synthesis processes can be reviewed for reproducibility to afford reliable lots of precursors for supply to all partners to ensure the best starting materials are employed at all sites.

Number 43: Wroclaw University of Technology, Poland (Peripheral Partner)
Group Leader: Prof. Jan Misiewicz
Jan Misiewic has been a professor of Physics since 1992. He obtained his PhD in 1979 and DSc (habilitation) in 1989. His field of interest: Solid State Physics, Physics of Semiconductors, Optical Spectroscopy.  Papers in international journals: more than 200, Books: 6 International experience: 2 years in MIT,Cambridge, USA
Our group focuses on advanced optical investigations of semiconductor heterostructures We are currently investigating the optical properties of semiconductor structures designed for near-infrared including dilute nitride arsenide materials like GaAsN, GaInAsN, GaAsSbN, GaInAsSbN, etc. The influence of the nitrogen nearest-neighbours environment on the band structure and optical properties. Influence of post growth treatment (like e. g. rapid thermal annealing) on optical properties of quantum wells. We intend to integrate all the current activities on dilute nitrides in DiNAMITe NoE. We will investigate optical properties using various spectroscopic techniques including: photo reflectance, photo transmittance, contactless electro reflectance, photoluminescence, photoluminescence excitation, micro photoluminescence and its X-Y mapping. Pressure dependencies of the optical transitions visible in PR and PL spectra will be measured and analysed. We wish to develop time resolved spectroscopy technique with the help of other partners in the network.
 
Number 35: University of Nottingham, United Kingdom (Core Partner)
Group Leader: Dr Amalia Patanè
Dr A. Patanè has made important contributions in diverse areas of semiconductor physics particularly in the fields of self-assembled quantum dots (Science 290, 124 (2000)). A highlight of her recent research is the use of magneto-tunnelling spectroscopy to probe the conduction band properties of diluted nitrides (Phys. Rev. Lett. 91, 126802 (2003)). Her research has led to more than 100 publications in international research journals and several invited and oral contributions at international conferences. 
Current research activities in Nottingham are based on the growth, fabrication and study of III-V arsenide and nitride semiconductor systems. 
Current projects include: Nitride-based heterostructures, Ferromagnetic semiconductors, Hybrid magnetic/semiconductor systems, Self-organised quantum dots, Superlattices, Quantum Hall effect, Laser design and fabrication, Advanced laser characterisation, laser reliability and degradation studies.
The current research is based on the growth, fabrication and study of III-V arsenide and nitride semiconductor systems. 
Current projects include: Nitride-based heterostructures, Ferromagnetic semiconductors, Hybrid magnetic/semiconductor systems, Self-organised quantum dots, Superlattices, Quantum Hall effect, Laser design and fabrication, Advanced laser characterisation, laser reliability and degradation studies

We plan to develop a strong research activity on the synthesis of novel classes of heterostructure systems based on dilute nitrides (e.g. quantum dots and multilayer structures) and their investigation using a wide range of electrical and novel microscopic probe techniques. Also, we plan to fabricate and investigate a wide range of devices based on dilute nitrides, including tunnel diodes, lasers and non-linear devices. We wish to integrate our activities in Growth, Structural studies, Optical and transport studies and Devices:. 
At Nottingham we have a wide range of growth, fabrication, optical and electrical assessment facilities in the three integrating groups in School of Physics and Astronomy, School of Electrical & Electronic Engineering and School of Mechanical Materials, Manufacturing, Engineering and Management

Number 29:  University of Aveiro, Portugal (Peripheral Parner)
Group Leader: Prof. Maria Celeste do Carmo
Prof Maria Celeste do Carmo has a professional experience of nearly 30 years as a University teacher and researcher in the field of optical properties of semiconductors with over a hundred refereed papers in journals and conference proceedings. She also has a vast experience in supervising PhD and Master student’s, industrial student placements and industrial projects.She has been Head of Physics Department as well as head of the Semiconductor Physics, Layered Structures and Optoelectronics for a number of years. She also has participated actively in a number of research and educational projects at both national and international level.
The main field of research in the group is the study of optical properties of semiconductors and optical defects in semiconductors. Current research interests are focused on GaN, InGaN and related nitrides (3 senior researchers and 2 research students), ZnO (4 senior researchers and 2 students), semiconductor quantum dot structures (3 senior researchers and 3 students), diamond growth and characterization (3 senior researchers and 2 students), photonic devices (3 researchers and two students). 
Major experimental techniques available include: FTIR, photoluminescence and photoconductivity (UV to IR), Raman spectroscopy and EPR (X and Q bands). AFM, SEM/EDX, XRD and NMR are also available locally. Ion implantation and RBS are also available non-locally and can be brought into the network if necessary. 

Number 18: Philipps University Marburg, Germany (HUB growth and Physical Characterization,
Core Partner)
Group Leader: 	Dr. P.J. Klar
Peter J. Klar studied for his diploma in Hamburg (Germany) and obtained his PhD from the University of East Anglia in Norwich (UK) in 1997. He did a 10 months spell as a postdoc at the Univeristy of Surrey in Guildford (UK). Since 1998 he is lecturer (Habilitand) at the Department of Physics of the Philipps-University in Marburg. His current research interests are new materials and nanostructures for applications in opto-electronics and spintronics. He has written about 70 peer review publications and three review articles. Two of the review articles focus on aspects of band structure and metastability of dilute-nitride-arsenide materials

The Marburg group has excellent research facilities comprising  two MOVPE reactors with facilities for structural characterisation (XRD, AFM, TEM, SEM). There are optical spectroscopy set-ups (Raman spectroscopy, modulation spectroscopy, photoluminescence spectroscopy on fs, ps, ns and cw time scales, pump probe and four wave mixing techniques, SNOM) combinable high pressure equipment (up to 20kbar) and high magnetic field equipment (up to 14 T) for the temperature range from 2 K to 350 K. Magneto-transport set-up with magnetic fields up to 12 T combinable with hydrostatic pressure up to 20 kbar in the temperature range from 2 K to 300 K. There is a set-up for laser device characterisation available. The theory group possesses powerful computing facilities.
Current Research activities relevant to the topic of the network include: 
MOVPE growth (W. Stolz)/ microscopic structure (K. Volz) / bandstructure investigations (P.J. Klar, W. Heimbrodt)/ dynamics (W. Rühle, J. Heber) / laser devices (W. Stolz) / theoretical modelling (S. Koch, T. Meier). We are currently collaborating with seven research groups in the DiNAMITe consortium. We plan to integrate further our activities covering the full range from the sample growth, structural investigations, electronic band structure, carrier relaxation, experimental and theoretical studies of the optical properties to the device fabrication, device characterisation and modelling. Other integrated activities will involve the organisation of work shops in Marburg, cooperation with  SMEs and exchange of researchers.

Number 23: Technical University of Lodz, Poland (Peripheral Partner)
Group Leader:  Wlodek Nakwaski

Wlodzimierz Nakwaski received his PhD in Electrical Engineering from Institute of Electron Technology in 1976, DSc degree in ElectricalEngineering from the same institute in 1985 and the Scientific Title (Professor in Physics) from the President of Poland, Aleksander Kwasniewski, in 1996. He is an author or co-author of over 300scientific papers and conference contributions, two patents, three book chapters and two books ("Semiconductor Lasers" (in Polish), PWN, Warszawa 1985, and "Physics of Semiconductor Lasers", North Holland, Amsterdam 1991). He is a Senior Member of IEEE-LEOS, and a member of SPIE and Polish Physical Society (PTF). Currently he is a full professor and a director in the Institute of Physics, Technical University of Lodz.
At the Laboratory of Computer Physics  in the Institute of Physics we are using advanced computer physics method to simulate an operation of various optoelectronics devices,  including edge-emitting diode lasers, VCSELs, surface- and edge-emitting light-emitting diodes as well as one- and two-dimensional diode laser arrays based on AIIIBV materials. Our simulation approaches are mostly composed of mutually interrelated parts describing optical, electrical, gain, thermal, and sometimes mechanical phenomena occurring inside volumes of semiconductor optoelectronics devices during their continuous-wave operation. These physical phenomena are, however, strongly and mutually interrelated. Hence our comprehensive models of various optoelectronics devices contain not only a detailed description of particular physical processes crucial to their operation but they also require accurate self-consistency parts including numerous interactions between various individual physical phenomena. Currently we are working on modelling of 1.3-um quantum-dot (InGa)As/(AlGa)As in-plane and VCSEL diode lasers, 1.3-um quantum-well (GaIn) (NAs)/GaAs in-plane and VCSEL diode lasers, 0.4-um nitride quantum-well in-plane and VCSEL diode lasers and one-dimensional nitride laser arrays. 
Number 21: Ruhr-Universität Bochum, Germany (Core Partner)
Group Leader: Prof. Dr. Martin Hofmann
Martin R. Hofmann joined the Ruhr-Universität Bochum, Germany  in August 2001 as Professor for Materials of Microelectronics. He studied physics at the Philipps-Universität Marburg, made his diploma in 1991, and finished his PhD in 1994. From 1995 to spring 1996 he worked as a Post Doc within the European Union Human Capital and Mobility program at the University College Cork, Ireland, at the Fondazione Ugo Bordoni, Rome, Italy, and at Tele Danmark Research in Hoersholm, Denmark. From spring 1996 to July 2001 he was research assistant at the Philipps-Universität Marburg. He received his habilitation in 2000 at the Philipps-Universität Marburg. The main research fields are ultrafast spectroscopy of semiconductor heterostructures, gain and  emission dynamics of semiconductor lasers and applied optics for biophysical research. 
The group is well-equipped with research facilities: Spectroscopy lab including setup for optical stripe length method (gain measurements), setup for Hakki-Paoli and transmission methods (gain, differential gain and line width-enhancement factor) and pump-probe setup for time-resolved measurements. Group’s   Current Research activities relevant the network are: Optical spectroscopy (time-integrated and time-resolved photoluminescence) on  (GaIn)(NAs), Quantitative measurement and analysis of optical gain, differential gain, line width-enhancement factor in (GaIn)(NAs) devices, correlation between mesoscopic structure and optical properties, Tunable diode lasers. We offer our spectroscopic expertise to the consortium. This includes measurement of  stationary and dynamic optical gain spectra with different methods (Stripe-length method, Hakki-Paoli-method, transmission method, pump-probe experiments) and of the line width enhancement factor on devices or unprocessed samples delivered by our partners with growth and/or processing facilities. The results shall be compared to theoretical work by partners performing modelling of dilute nitrides. 
Number 37: University of Rome "La Sapienza", Italy (Core Partner)
Group Leader: Prof. Mario Capizzi

M. Capizzi, born in Rome on 13-2-1945, is full professor of "Electronics of solid-state devices" at the Physics Department of the University of Rome "La Sapienza". M. Capizzi has visited for more than one year institutions like  E.T.H. (Zurich), E.N.S. (Paris), Bell Labs (Murray Hill), EPFL (Lausanne). M. Capizzi has published more than 170 papers in international journals. He has investigated the role of disorder, impurities, many body effects, electron-phonon interaction, and hydrogen irradiation in most of those materials.
The group at Rome has a well recognized expertise in the study of the optical and electronic properties of solids and in post growth treatments of semiconductor materials by hydrogen irradiation and thermal annealing. optical and magneto-optical characterization, post-growth treatments and hydrogen irradiation.
We have good Research facilities comprising: double and single monochromators, optical liquid He cryostat with magnetic field up to 14 T, Si CCD and InGaAs linear array detectors, 6 W Ar and 8 W V-Yag lasers, Ti
sapphire laser and Kaufmann ion implanter. We are interested in investigating i) the effects nitrogen insertion in III-N-V alloys has on the optical, transport, electronic, and structural properties of the material; ii) the effects hydrogen insertion in the host lattice has on the material physical properties.We would like also investigate the effect of hydrogen passivation as a function of the Fermi energy position in the material band-gap, and to consider the case of other isoelectronic impurities.

Number 38: University of Sheffield, UK (HUB for growth, fabrication & training, Core Partner)
Group Leader: Dr Mark Hopkinson

The group at Sheffield lead by Martin Hopkinson is part of The EPSRC funded central facility in the UK. The group is active in materials growth (MBE and MOCVD) including  GaAsN, InGaAsN and InAsN, structural characterization using  XRD, TEM, AFM, optical characterization with  PL and PC, and  devices research  (Laser, VCSEL, photodiode, resonant tunneling diode, Gunn diode) 
The group has existing collaborations with 5 of the DiNAMITe partners in all aspects of materials and devices research. We plan to integrate all our activities, specifically: 
To work with MBE and MOVPE partners to address raining issues in epitaxy.
Choice of sources and their implementation
High resolution and high sensitivity composition and structural analysis. 
Defect detection and identification 
Theoretical studies on (i) fundamental material structure, (ii) effect of localization, (iii) band structure 
Devices; 1.55um lasers, VCSELS and Inter sub band devices 

Number 33: Universität Karlsruhe, GERMANY (Core Partner)
Group Leader: Dr. Michael Hetterich

The group at Karlsrhue has a good range of research facilities covering all aspects from growth to material and device characterization: Double III-V / II-VI MBE system for the growth of GaInNAs-based quantum structures (combined with II-VI semi magnetic materials as spin-aligner for the realization of spin injection into GaInNAs quantum wells or dots). Facilities for optical and electron beam lithography.  
Structural characterization by X-ray diffraction, scanning and high-resolution   transmission electron microscopy (group of Prof. Gerthsen, CFN), in particular quantitative analysis of compositions etc. on a nanometer scale using DALI, CELFA etc. Spectroscopy with high temporal and spatial resolution using a streak camera combined with a micro-photoluminescence set-up. Set-ups for PL (detection: liquid nitrogen cooled InGaAs array), PLE, ER, and PR (detection: TE-cooled InGaAs/InAs/Si diodes) measurements at T=4-300K.
Current research in the group includes: Spectroscopic investigations, in particular temperature-dependent photo- and electroreflectance (PR, ER), photoluminescence (PL),  PL excitation (PLE) spectroscopy of GaInNAs-based quantum wells (QWs) and theoretical modelling of the results based on the band anticrossing (BAC) model to analyse the electronic band structure (band offsets, conduction band dispersion, BAC model parameters etc.) in this material system. Optical properties of GaInNAs quantum wells with high (>50%) In content. Temperature-dependent gain measurements and, optically pumped lasing (e.g. measurement of T0 etc.). Quantitative analysis of QW composition profiles (N,In) using high resolution transmission electron microscopy (TEM).

Number 39: University of Strathclyde, UK (HUB for devices, Core Partner)
Group Leader: Prof. Martin D. Dawson

Martin D. Dawson is Professor and Associate Director in the Institute of Photonics at the University of Strathclyde, where he founded and leads the research activity in III-V materials and devices. He is widely known for contributions over a 20-year research career to ultrafast and diode-pumped laser technology, to III-V semiconductor materials science (especially with AlGaInP, GaInNAs and AlGaInN alloys) and to design and development of a range of surface-normal devices, including SESAMs, VCSELs, VECSELs and VCSOAs. He has published over 200 refereed journal and conference papers and holds 11 granted patents.The group at Strathclyde has the following research facilities available:
Range of optical and telecom test equipment, including beam profilers, power meters, optics,
mounts, 1.3um tuneable laser source, OSA with integral 1.3um SLD, Oxidation furnace for steam oxidation
of AlAs, In-house codes for VCSEL, SESAM and VCSOA design, 5K – 300K spectroscopy set up for PL,
PLE and reflectivity measurements, ICP dry etching system
Current research activities:Spectroscopic studies of GaInNAs by PL, PLE(recently including quantum well
intermixing, studies of 1.5m material), Optically-pumped GaInNAs VCSELs, VECSELs and VCSOAs,
Electrically-driven GaInNAs SOA’s (in-plane and vertical cavity), GaInNAs SESAMs for laser mode
locking 

Number 10: Infineon Corporate Research Photonics, Germany (HUB for industrial
Relations coordinator & Growth, Industrial Partner)
Group Leader: Dr. Henning Riechert

Infineon is a leading innovator in the international semiconductor industry. It designs, develops, manufactures and markets a broad range of semiconductors and complete system solutions targeted at selected industries. The products serve applications in the wireless and wireline communications, automotive, industrial, computer, security and chip card markets. The product portfolio consists of both memory and logic products and includes digital, mixed-signal and analogue integrated circuits, or ICs, as well as discrete semiconductor products and system solutions. Infineon’s 3rd quarter 2003 revenues were 1.47 billion - flat sequentially and up 11% year-on-year. It employs 31,600 employees worldwide, including 5,700 engaged in research and development by end of June 2003 In Research & Development Infineon has a Strong technology portfolio with more than 30.300 patents and applications, 27 major R&D locations worldwide  and aproximately 5,700 R&D staff . The R&D expenditures fiscal year 2002 was  Euro 1,06 billion 
The group lead by Dr. Riechert is responsible for the growth, optimisation and characterisation of InGaAsN heterostructures and lasers, combination of InGaAsN with InAs quantum dots. Where the research facilities including MBE growth (2 machines), PL and  photovoltage sets to determine band-offsets, laser characterisation may be made available for integration activities. The group has been collaborating with numerous groups within the consortium, in the form of supplying high quality material and GaInAsN VCSELs

Number 11: CNRS-INSA, France (HUB for physical characterization, Core Partner)
Group Leader: Prof. Xavier MARIE
Xavier Marie, born in 1966, received his Ph.D degree in 1991 in the « Institut National des Sciences Appliquées (INSA) » in Toulouse. He received his Habilitation (HDR) in 1995.  He is currently Professor  in the department of Physics in INSA and researcher in the « Laboratoire de Physique de la Matière Condensée de Toulouse (LNMO) ». He has worked for about fifteen years on the electronic properties and ultrafast spectroscopy of low dimensional semiconductor structures (quantum wells, quantum dots). His main present interest deals with (i) the quantum mechanics engineering of semiconductor devices and (ii) the optical and spin coherence in self-organized quantum dots. Xavier Marie has directed 7 phD thesis and is the author or co-author of about 100 papers and communications in refereed journals.
Research facilities available: PL, PLE set-up (Ti:Sa laser),Photo-current set-up, Time resolved set-up :Ps
And 100 fs Ti:Sa mode-locked lasers,Optical Parametric Oscillator (1-1.6 mic), Two-colours up-conversion
set-up, Synchro-scan Streak Camera (S1 photocathode), 2 ps time resolution,Cryostats 1.7 - 300 KCurrent
Research activities relevant to the network:
Band structure calculation of InGaAsN/GaAs quantum wells, Cw optical spectroscopy
(PL, PLE, photo-current), Time-resolved photoluminescence
Planned research to contribute to the activities in ‘DiNAMITe’Network:
Band structure engineering of InGaAsN structures (barrier GaAs, GaAsN, GaAsP)
Study of the electronic properties through time-resolved investigations
The group will also coordinate the integrated WP2 activities.

Number 12: Istanbul University, Turkey (Peripheral Partner)
Group Leader: Prof.. Dr. M. Çetin ARIKAN
Ph.D., 1980, University of Essex; M.Sc., 1973, University of Istanbul; B.Sc., 1970, University of Istanbul
Previous Occupations: Research Scientist (1984 –1992), TUBITAK, Research Institute for Basic Sciences, Turkey, Research Scientist (1982- 1983) Oregon Institute of Science and Technology, Department of AppliedPhysics and Electrical Engineering, USA, Research Fellow (1978- 1982) University of Essex, Department of Physics, UK, Present Occupation: Professor of Solid State Physics University of Istanbul,
Department of Physics, Turkey

Current Research activities: Assessment of the electrical and optical properties of dilute nitrides III-V materials and devices. Group research facilities available: Characterization techniques including spectral and temperature dependence of photoconductivity, photovoltage, photoluminesance, photoreflectance, ellipsometry, DLTS, PITS, transient effects, Hall effect, Shubnikov de Haas effect, CV, IV (dc or pulsed) etc. Accesses to: SEM, TEM, Spectrometers, X-Ray difractometer, NMR from the University central facilities

Number 13: LAAS-CNRS
Group Leader:  Dr. Chantal FONTAINE (HUB for growth and training, Core Partner)

Current Research activities relevant to the topic of the network:
The Photonics group at LAAS  is composed of 15 permanent researchers. Our activities aim to develop Novel laser structures, materials and technologies based on III-V semiconductors and rare earth element doped fluorides.  Current Research relevant to the topic of the network relates to the development of 1.3µm laser diodes and VCSELs.
LAAS will focus on : MBE growth and study of physical properties of high wavelength emitting (100) and (111): GaInAsN/GaAs quantum well structures, Modelling, Fabrication and test of Ga,InAsN diode lasers and AlOx apertured VCSELs
Research facilities available: MBE system for N-diluted III-V epitaxial growth
Clean room for Laser Diodes and AlOx VCSEls  fabrication : Photolithography, RIE, metal and dielectric deposition, AlOx furnace, Device characterization techniques for Laser diodes and  VCSEls , MOEM technology.

Number 20: Royal Institute of Technology , Sweden (Core Partner)
Group Leader: Mattias Hammar
Mattias Hammar received his M.Sc. and Ph.D. degrees from the Department of Physics, Royal Institute of Technology (KTH), in 1986 and 1993, respectively. From 1986 to 1988 he was with the Institute of Microelectronics in Kista, Sweden, working on silicon integrated circuit technology. In 1988 he joined the Physics Department at KTH working on experimental surface physics and related instrumentation, and from 1993 to 1995 he was a visiting scientist at the IBM Thomas J. Watson Research Center, New York. From 1995 to 2000 he was a research staff member of the Electronics Department at KTH working primarily on MOVPE epitaxial growth issues and the development of long-wavelength vertical cavity lasers, and in 2000 he joined Zarlink Semiconductor as an R&D project manager. Since 2002 he is an Associate Professor at KTH. His present research interests are centered on materials and design issues for vertical-cavity lasers.
The group has a 1300-m2 clean-room facility with processing equipment for semiconductor device fabrication, including extensive possibilities for materials and device characterization: MOVPE growth reactors for GaInNAs and related materials; optical and electron spectroscopies; advanced scanning-probe microscopy; static and dynamic device characterization and modeling; access to synchrotron-radiation facility.
Currently we are working on the studies of MOVPE growth and properties of GaInNAs QWs
Design, fabrication and evaluation of VCSELs and edge-emitting lasers based on these QWs
Coordination of EU-IST: GIFT project as well as participation in national programs on these topics
Part of major programs in the photonics area supported by Swedish foundation for strategic research (SSF) and Swedish agency for innovation systems (VINNOVA). For the specific activities discussed here the funding share is approximately 350 kEUR per annum

Number 22:Tampere University of Technology, Finland (HUB for growth, fabrication, devices and training, Core Partner)
Group Leader : Professor Markus Pessa 
1999-present	Founder and Director of Optoelectronics Research Centre; Professor of Tampere University of Technology since 1988. Under his guidance, ORC has become the largest research centre of optoelectronics in Finland and is the biggest university-based institute in Europe for crystal growth by molecular beam epitaxy. Main research: Semiconductor technology & ultra-fast and intense optics. Authored over 400 papers in peer-reviewed journals and international conferences
2002-present	Member of the Editorial Board of New Journal of Physics, and Member of the Board of Directors of the Kista Photonics Research Centre, Royal Institute of Technology, Sweden   
1998 Professor of the Year, awarded by the Trade Union of Professors in Finland
1996	 Knight, First Class, of the Order of the White Rose of Finland, awarded by the President of the Republic of Finland 
ORC's role is to develop, in cooperation with other partners, ultra-fast and light-emitting semiconductor structures using molecular beam epitaxy for layer growth, suitable for device applications on the infra-red, especially at the wavelengths of  ≥1.3 µm.  For a novel structural characterisation of epitaxial layers, ORC will develop a cross-sectional variable-temperature scanning tunneling microscopy to observe almost native walls of quantum wells and other hetero-interfaces at atomic resolution. It will also develop a broadband non-linear quantum mechanical mirror (SESAM) with ultra-fast response and a high-power SESAM-based  mode-locked fibre lasers. ORC will also study and prepare light-emitting devices based on dilute nitride including 1.3 µm VCSELs and long-wavelength high-power edge-emitting lasers.
ORC will concentrate on dilute nitride based SESAMs (semiconductor saturable absorper mirrors),
VCSELs at 1.3 µm and also the high-power edge-emitting lasers at around 1.3 µm. We will prepare
materials for delivery for processing at other partners sites and we also process the devices by ourselves.  
Deliverables: MBE grown wafers for processing at different partners sites for comparison. ORC will also
Carry through the measurements of static and dynamic properties of the above said devices.
Research facilities available:
- 5 commercial MBE systems for epitaxial growth
- Complete in-house optoelectronic device process facilities
- Wide range of characterisation methods

Number 17: Nanoplus, Germany
Group Leader: Dr. J. Koeth
Current Research activities relevant to the network activities:
developement of 1.3 to 1.55µm laser devices, FP lasers, DFB lasers, VCSELs 
Planned research to contribute to the activities in ‘DiNAMITe’Network: Developement of
1.3 to 1.55µm laser devices, FP lasers, DFB lasers, VCSELs
Research facilities available:
Cleanroom, full Laser processing, Laser characterization

Number 24: National Institute of Research and Development in Materials Physics, Romania
(Peripheral Partner)
Group Leader: Dr. Cristian-Mihail Teodorescu
1990 M.Sc. University of Bucharest, Department of Applied Physics (Romania)
1995 Ph.D. Universite Paris Sud, Orsay (France)
Languages: Romanian, French, English, German, Spanish
Programming: Fortran, Pascal, C, Basic, Igor, Mathematica, Office, Latex
44 published papers in ISI-quoted journals (Phys. Rev., Phys. Rev. Lett., J. Phys., J. Chem. Phys., Surf. Science, etc.)
Current Research activities relevant to the topic of the network: nanostructured quasicrystals; metal-fullerene thin films; metal-semiconductor interfaces; oxide and nitride layers; nanocrystalline silicon; low-dimensionality magnetism and electronic structure.

We intend to integrate all these activities for the dilute nitride systems. The group has a good range of experimental facilities including: Own facilities: thin film growth ;melt spinning alloy elaboration; x-ray diffraction; x-ray photoelectron spectroscopy; transport measurements; magneto-optical measurements; band structure calculations. Collaborative facilities: molecular beam epitaxy; CVD and PVD;high-resolution photoemission; x-ray absorption and x-ray magnetic dichroism; electron microscopy.

Number 41: University of Warwick, UK (Core Partner)
Group Leader: Dr. C.F. McConville
Dr. C.F. McConville is Reader in Physics at the University of Warwick.  His research interests are focused on the study of surface and interface properties in III-V semiconductor materials to understand the physical, electronic and vibrational properties of epitaxially grown materials for application in novel device structures. He also has several years experience of MBE growth of III-V semiconductor materials. The Semiconductor Surface Science Group at Warwick has a wide range of surface sensitive techniques in- house, including HREELS, CAICISS, XPS, AES, LEED, STM and AFM and makes use of central facilities, such as the MEIS and high-resolution XPS facilities at Daresbury Laboratory. The Warwick group specializes in studying the near-surface structure and electronic properties of narrow-gap III-V materials and developing semi-classical dielectric theory and charge profile calculations.  CFM is principal and co-investigator on current grants totaling £2.185M, and he is the author and co-author of 130 publications and reviews in international refereed journals.

In the proposed research the surface structure (physical and electronic), near-surface structure and shallow buried interfaces, will be investigated for a complete range of dilute nitride materials, including InNxSb1-x, InNxAs1-x, GaNxSb1-x, GaNxAs1-x and Ga1-yInyNxAs1-x alloys.  We also propose to prepare thin InNxAs1-x and InNxSb1-x films by in-situ low energy nitrogen ion implantation and annealing of InAs and InSb surfaces and compare the near-surface electronic properties with those of the epitaxial bulk alloys.  Contact formation to dilute nitride semiconductors will also be investigated

B5.1 New Participants

The two ultimate objectives of the proposed DiNAMITe NoE are  to bring together the current expertise and resources for the integration of the research capabilities in the field of dilute nitride materials and, through the invention, design, manufacturing and application of novel devices and systems contribute to the competitiveness of future European photonics technologies and, to spread excellence through training courses, regular workshops and scientific meetings, and encouraging joint supervision and extended visits of PhD students.  In order to achieve these objectives we not only set key research areas and establish strong collaboration between the research groups of the consortium to tackle the problems and coordinate the execution of research projects, but we persistently seek for new academic partners  and industrial groups to join the consortium. For this reason we make sure that a substantial part of the integration activities budget will be reserved for the new participants (section B.7). We plan to encourage actively the entry of new groups through our spreading excellence and dissemination activities. We will ensure that the “new participants” issue is an agenda item in each of the quarterly management board meetings as outlined in section B7. 

Since the establishment of the consortium we have been made aware of the interesting developments regarding  the  “pseudo-potential” type calculations of Prof. Joerg Neugebauer, whose work can be most valuable if integrated into WP5. Prof. Joerg Neugebauer  is a well-known theorist in the field of defects in semiconductors and nitrides. He is also involved in a STREP in GaInNAs lasers headed by Infineon
We therefore, intend to invite Prof. Neugebauer’s group  to the network in the first possible opportunity.

He is currently at 
Fritz-Haber-Institut der Max-Planck-Gesellschaft
Faradayweg 4-6
D-14195 Berlin-Dahlem
Germany
WWW: http://www.fhi-berlin.mpg.de/th/JG
E-mail: neugebauer@fhi-berlin.mpg.de
Phone: ++49 30 8413 4826
FAX:     ++49 30 8413 4701
He is now moving to
Department of Theoretical Physics, University of Paderborn, Germany.

B5.2 Other Countries

We anticipate a number of research links with groups outside the Euro-zone. Our links will be in the form of joint workshops, symposia, research visits, lectures and seminars as well as exchange of materials and devices. To star with we intend to establish close links with the “Physique des Semiconducteurs et des Composants pour l’Electronique “group at  Faculté des Sciences de Monastir, 5019 Monastir, Tunisia. The group is led by Professor Hassen MAAREF and has 13 researchers and 9 students, who will be participating in the technical and spreading excellence JPAs of the network. The group already has wide range of activities in dilute nitrides and has strong links with three of the consortium partners (11, 14 & 36)

Number 50: Faculté des Sciences de Monastir, Tunisia
Group Leader: Professor Hassen MAAREF 
Current Research activities relevant to the topic of the network:
The aim of our research activities is the study the optical and the electrical properties of new materials (semiconductors III-V including GaAsN and GaAsInN at low N concentration) used in the field of Electronics and Optoelectronics.We are working on the experimental physics of new materials for potential uses in Microoptoelectronics (high electron mobility transistor HEMT, MOSFET, lasers based on quantum wires and quantum dots ,optical detectors) with a major interest in materials and devices at the nanometer scale (self-assembled QDs and strained semiconductors).
Our group have the following facilities:	
RF Molecular Beam epitaxy of III-nitrides growth chamber .The active nitrogen was generated by an ADDON RF Plasma source. RHEED digital image analysis.  
Photoluminescence (PL) 8KPhotoluminescence excitation (PLE) and Polarised PLE, Time resolved spectroscopy in the nanosecond range, Hall Effect measurements 10 K-300K, Deep level Transient Spectroscopy (DLTS) and (CTS), Admittance Spectroscopy.
We intend to integrate all our activities particularly those on: the Molecular Beam Epitaxy (MBE) with the RF generation of plasma to grow diluted nitride layers GaAsN and GaAsInN. The optical properties of these layers (studied by Photoluminescence (PL) Spectroscopy, Photoreflectivity and polarised PL in the temperature range 10K--300K).  Deep level traps in the epilayers and in heterostructures (HEMT, MOSFET, Schottky....) by capacitence DLTS and Current -DLTS technics in the temperature range 10K---450K.

B.6 Quality of the integration

The joint programme of activities, described above in B.4 and to be carried out within the DiNAMITe NoE assisted by the five work packages, is designed to create a deep and durable integration of the research capacities of the network partners, at the same time, advancing knowledge on the topic of novel dilute nitrides and highly mismatched semiconductors. The team consists of some of the strongest research groups and partners from leading industries in the field.  All the partners have all provided a Letter of Intent signed by their administrative authorities stating that they “recognize that the development of this Network of Excellence “DINAMITE” is a long-term commitment and that it may lead to the sharing of human resources, infrastructures, and activities with other network members”. Therefore, DiNAMITe has the insurance from all the participating organizations to exist as a durable network in relevant innovative technologies in European Research.

The nerve centers of the network’s activities will be the HUBs where the coordination, management, integration, training, spreading of excellence activities will be concentrated.  Core partners (CP) are those which have made key contributions to the field in the areas of research listed in WPs 1-4. These groups are already collaborating with each other in small clusters, and have recently attracted substantial research funding as discussed in section B5. The activities of the core groups who brought forth these results will serve as an initial backbone to the NoE, and by sharing sample material, sample devices and know-how they will guarantee an internationally competitive level of high quality science from the very beginning. The peripheral partners (PP) will work under the technical management of the core partners and contribute to the technical programme, integration and spreading of excellence activities. Industrial partners (IP), who will contribute to the industrial advisory board, provide access to facilities, supply of demonstrator devices, provide secondment opportunities and participate in commercialisation activities to ensure the work continues to be focused on actions that are relevant to the needs of European Industry.  We also envisage the emergence of additional skills requirements during the course of the project and make necessary provisions for these in the budget in section B7. Through this approach DiNAMITe programme ensures spreading excellence efficiently through the European Research Zone.

DiNAMITe has a solid organization and management structure to secure the achievement of the following main objectives of the NoE 

•	Establishing critical mass of researchers in four main disciplines that constitute to the technical work packages
•	Integrating of knowledge, equipment, man power and technical resources
•	Structuring European research activities for enhanced efficiency and more economical use of resources.
•	Defining key research challenges and initiating  joint research projects
•	Establishing strong links with industry to achieve world leadership in the innovative technologies based on dilute nitride research.
•	 Initiate, develop, coordinate and promote activities of spreading of excellence
•	 Develop and offer services to support SMEs in implementing the research output based on the network activities.

	22 Core Research Partners

WP2& WP2(a)

WP4& WP4(a)

WP3&
WP3(a)

WP1 & WP1(a)

         WP5

WP5.1

WP5.2

IAB

7 Industrial
Partners

All Partners

	17 Peripheral Partners

	MANAGEMENT OF INTEGRATION

Major National Investment, Facilities and Track Record

	
	11 HUBs

NERVE CENTRES Of  DiNAMITe

WP5.3

Figure 6.1 DiNAMITe Core, Peripheral, Industrial  Partner and Hub Structure and their
integration 

The degree and success of integration will be best assessed by a number of quantitative and qualitative performance indicators listed below. The list is not exhaustive and will be extended when available reliable indicators are identified.

Quantitative performance indicators:

-	Number of coordinated research task forces or jointly executed research projects that are initiated to tackle important and timely scientific issues;
-	Number of joint scientific publications and conference presentations involving two or more partners within a thematic work package;
-	Number of joint scientific publications and conference presentations linking two or more partners across work packages;
-	Total number of visiting days at other sites made by members of the Network;
-	Number of PhD students co-supervised between sites;
-	Number of “twinned” Ph.D. theses;
-	Number of conferences, symposia or special sessions organized by DiNAMITe;
-	Number of short courses and tutorial workshops organized by DiNAMITe;

-	Number of summer and winter schools organized by DiNAMITe;
-	Number of seminars and meetings attended by DiNAMITe partners;
-	Number of joint intersite proposals (IPs, STREPs, etc.) submitted for EU funding under 	FP6, and number receiving funding;
-	Number of joint intersite proposals to other funding agencies;
-	Number of joint intersite proposals applying for industrial support;
-	Number of industrial associated partners;
-	Number of spin-offs created or assisted by DiNAMITe;
-	Number of patents proposed by the members of DiNAMITe;
-	Number of external bodies seeking professional consultancy.

Qualitative performance indicators:

-	Establishment of an interactive DiNAMITe website;
-	Establishment of a common database of research expertise, resources, and scientific specimens available at partners’ sites;
-	Establishment of a virtual Europe-wide DINAMITE graduate school;
-	Establishment of a “travelling theses library”;
-	Establishment of a “European Centre for Optoelectronic Materials, Devices and Systems Research” that will ensure the continued existence of the Network structure and activities beyond the funding period.

The assessment of the performance of Integration will be the task of the Management Board and Project Coordinator.  The Management board of DiNAMITe will periodically review the JPA of the Network and will closely evaluate the degree of integration according to the performance indicators listed above. A detailed plan of performance steps to be achieved each year will be set up by the Management Board in close cooperation with the IAB, the EC project officer, and the reviewers for 12-month intervals An annual report will be distributed to all partners of the Network, which should identify areas where the degree of integration is inadequate and should also provide recommendations for improvements.

B.7 Organisation and management

Management Board
Project Coordinator + (Coordinator of WP5 + 3 programme managers of sub- work packages, WP5.1 – WP5.3) + (Four Coordinators of technical work packages (WP1- 4)) + Chair person of Industrial Advisory board

Project coordinator
(Financial and legal responsibility

Administrator (Financial Management Documentation and reporting support
Legal support)

WP1, WP2, Wp3 and WP4 Clusters and Technical HUBs

Industrial Advisory board

Integrations  Programme manager

Training, Dissemination and Networking, and Integration Clusters and associated HUBs.

Training &
Education
Programme manager

Spreading of Excellence Coordinator

Dissemination / net working 
Programme Manager

Other NoEs, IPs, User Groups, Funding authorities, Industry, Potential new partners, Outside Euro-zone  and Public

Research and Integration of research excellence coordinators (4)

Figure 7.1 Management structure for DiNAMITe NoE

The integration of the skills and the structuring of research of 50 academic, government and industrial research groups with the ultimate aim of achieving an overall excellence and world leadership for the European research zone is a very ambitious task and requires excellent communication and professional management structures. In order to address the complex management tasks associated with “DiNAMITe” NoE, the network will be governed by a management board that will oversee the effective management of the individual components of the management structure for operational, technical and financial aspects of the project. The management and organizational structure of the network is set up in a way that allows fast decision making with low overhead, but at the same time makes sure that all relevant organizations and individuals in the project have an opportunity to influence general guidance, contractual, and budget decisions through their activity in a clusterThe overall management structure will have structure as depicted in figure 7.1 

The Project Coordinator: has legal and financial responsibility for the network and is also the main point of contact for the EC Project Officer. He will receive the EC payments and administer the distribution/allocation of these between network partners and activities in accordance with the EC contract, the consortium agreement, and the decisions taken by the consortium. 
The management responsibilities of the Project Coordinator are as follows:
•	Maintenance of the consortium agreement and the implementation of activities at the consortium level not covered by any other activity cluster
•	Coordination and chairing of the Management Board and the delegation of project management tasks to the Management Board
•	Coordination of the technical activities of the project.
•	Coordination of  financial management, legal, contractual and ethical activities
•	Coordination of scientific management and other industrial and innovation-related activities.
•	Coordination of science and society issues related to the research activities conducted within the project
•	Delegation of administrative tasks to the Administrator and support group. 
•	Promotion of equal opportunities between men and women in the 
	implementation of the project.
•	The project coordinator also takes steps to ensure that the any situation, which may lead to conflict of interest and may impair any of the activities of the consortium, is appropriately dealt with.
.  

Administrator will support the Coordinator and Management Board in their administrative tasks. These tasks include administrative duties in financial management, organization, preparation of meetings, general project support, legal advice, documentation, and reporting.
 
Management Board consists of the Project Coordinator, the chairperson of the Industrial advisory board and the 8 key members coordinating the project activities. These are the Coordinator of the WP5 and programme managers of sub-work packages, 5.1, 5.2, 5.3, and all the four coordinators of technical WPs (Growth of Semiconductor materials and characterization, Physical Characterization, Functional Devices and Theory)

The Management Board is responsible for all decisions for the smooth running of a successful project including strategy, planning and execution, budget allocation, IPR management, and solving any disputes in consultation with the legal, financial and administrative support elements. The board will ensure that all decisions will be taken in accordance with the budget available and rules/restrictions in effect. All Management Board members will have assigned deputy persons, who can take responsibility at any time, when a key person is not available or may leave the project.
 
The Management Board will set up detailed 18-month work plans, based on the “longer-term” strategy and decide on updates of the project plan when for example there are new integration aspects, additional new partners, or branching out of the research programme due to unexpected developments and/or changing industrial needs. In case of withdrawal of a key contributor from the DiNAMITe consortium, the Management Board will decide whether to substitute the partner by a new one, or if the existing partners can share the activities of the withdrawing partner. If any updates or changes to the consortium agreement are needed, a “General Assembly” of all the partners, who have signed the consortium agreement, will meet and make necessary decisions. All these rules will be described in detail in the consortium agreement.
The Management Board will be responsible for all budget decisions and allocation of funding within the project. The Project Coordinator has the responsibility to distribute these funds in accordance with the consortium agreement and decisions made by the Management Board.  EC rules and regulations will be upheld throughout.

A provisional management board consisting of a coordinator and six steering committee members was elected during a workshop organized in January 2003 at the start of consortium building for the DiNAMITe network. All the members of the provisional management committee have contributed widely to the preparation of the current proposal.

Management Core Team To maximize efficiency and minimize cost, a Management Core Team of three persons consisting of the project coordinator and the coordinators of two of the work packages will be appointed by the management committee for rapid communication to make day-to-day decisions based on the directives of the management board. The non-permanent members of the core team will rotate after every twelve-months. The core team will communicate regularly by e-mail and telephone. In order to speed up the decision making process, the core team will consider the application of new members to the consortium and make recommendations to the management board. It will also aid the project coordinator by sharing various managerial tasks to allow the project coordinator to focus on the technical aspects of the project. 

Management Board quarterly meetings will be held to review progress and carry out necessary revisions to keep to the project plan. The minutes of the meeting will be made available to the consortium partners and to the EC project officer immediately after each meeting.
All decisions will be made by a simple majority vote. Appropriate measures will be taken if the decision to be voted on is directly related to one or more members of the management board by removing their voting rights temporarily. Management board meetings may be held through video and telephone conferencing, to reduce cost and increase efficiency. However, at least one conventional meeting will be held every year.  The members who are not able to attend the physical meetings may cast their votes via telephone, fax or e-mail etc.  
 
An Industry Advisory Board (IAB) will be set up to provide top-level guidance and feedback to the management board, and ensure the work continues to be focused on actions that are relevant to the needs of European industry. The members of the industrial 

Partner No	Company	Member 	
2	Agilent Technologies, Torino, Italy	Dr. Daniele BERTONI	
10	Infineon , Muenchen, Germany	Dr. Henning Riechert (Chair)	
17	Nanoplus, Gerbrunn, Germany	Dr. J. Koeth	
44	Intexys, Labege, France	Dr. Jean Charles Garcia
	
45	Comlase NT AB, Stockholm, Sweden	Dr. Christofer Silfvenius, 
	
46	Sacher Lasertechnik GmbH, Marburg, Germany                     	Dr. Joachim Sacher 
	
47	EPICHEM ltd. Wirral, UK	Dr.Simon Rushworth 

Figure 7. 2 The industrial advisory board (IAB)

board are made up of the group leaders of the industrial partners, both large and SMEs. The board will have regular quarterly meetings prior to the management board meeting, via telephone or video conferencing. The members of the board will be reviewed every 12 months in consultation with the industrial groups. 

The board will elect a chairperson also on a 12-monthly rotation. The chairperson will be a full member of the management board to make sure that management decisions follow the basic guidance of the industrial board. The IAB, in consultation with the management board, will nominate new companies to join the NoE aiming a full coverage of most European countries. A provisional industrial board has already been set up during the preparation of the current proposal as shown in figure 7.2. Dr. H. Riechert, who represents one of the largest companies with direct relevance to the project activities, chairs the provisional board. The coordinator for Spreading Excellence is responsible for the overall activities covered by the three sub clusters: Training, Dissemination & Networking and integration towards self-sufficiency. The Training programme manager is responsible for the management and coordination of all training related activities in the project (details in section B4). The Dissemination & Networking programme manager is responsible for the management and coordination of all dissemination and networking related activities in the project (section B4). The Integration towards self-sufficiency programme manager is responsible for actions towards full integration and achieving self-sufficiency after the EU funding comes to an end (section B4). The technical work programme is structured into Science Engineering Clusters, which are led by 4 Coordinators. These 4 Coordinators of the Science Engineering Clusters will also be part of the Management Team. 

Annual elections: All members of the Management Board and the core team are subject to annual elections. Coordinators of the technical clusters (WP1-4) will be elected by the cluster members on a 12-monthly basis. The remaining members of the Management Board and the Core Team will be elected on a 12-monthly basis by the Management Board (the IAB chair is elected by the IAB 
 Self-Sufficiency: In order to reach self-sufficiency during the life-time of the project, we plan to gather the appropriate intellectual property rights (IPR) arising from Integration Activities and Dissemination funded by DiNAMITe into an IP library which can be commercialized and thus fund future DiNAMITe activities beyond the period of EU funding. (IPR resulting from research carried out with funding from external sources, will not be owned by the DiNAMITe consortium)
 The income for a self-sufficient network will be expected from the following “Integration and spreading of excellence” and related activities 
•	Consultancy services
•	IP model libraries 
•	Software implementation tools 
•	Short training courses, industrial courses and summer schools and training material 
•	Reports, books, manuals 
•	Setting up European-MSc courses and long distance internet based courses
 
Consortium agreement: A consortium agreement will be set up in accordance with EC regulations and based on the FP6 consortium agreement check-list and the provisions and guidelines described in this proposal document. It will include all aspects necessary for
•	the internal organization and management of the consortium,
•	intellectual property arrangements, and
•	settlement of internal disputes. 
The agreement will 
•	define rules for changes in consortium membership, including its modification or extension to include further legal entities contributing to the implementation of the project.
•	set rules for the management of knowledge, intellectual property and other innovation-related activities within and out of the project.
•	set rules for the allocation and exercise of joint ownership, rules for using/accessing partners’ knowledge, confidentiality and any other issues relating to the intellectual property rights either generated during the project or existing prior to or acquired in parallel with the project. 
IPR rules will be based on EC FW6 model contract part C – Intellectual Property Rights (Annex II.32-35). Confidentiality issues in the project will be handled in accordance with Annex II.9 of the EC model contract (http://www.cordis.lu/fp6/find-doc.htm#modelcontracts).
The consortium agreement will also address the following points:
•	Voting rules in the different boards including the Management Board,
•	designation of the Project Coordinator, other Coordinators, 
•	new membership & exclusion
•	In case of addition of new partners their integration into the technical
	clusters
•	self-monitoring activity to measure progress towards reaching the network’s
	goals and to compare this with the long-term plan in the joint activities. 

The project coordinator, together with the Management Board, will assess and compare progress with goals on a three-monthly basis. On an annual basis, these results will be discussed with the IAB, EC Project Officer and Reviewers and corrective actions taken if needed.
A periodic activity report containing an overview of the activities carried out by the consortium during every one-year period will be set up and published. The report  will include:
•	A summary of progress toward the project objectives. 
•	A description of progress towards the milestones and deliverables.
•	The identification of problems encountered and corrective action taken. 
•	An updated plan for using and disseminating the knowledge developed within the consortium
Furthermore, a confidential management report on every one-year period will be prepared and distributed to the EC project officer, the project reviewers selected by the EC, and the Management Board. This report will include:
•	A justification of the resources deployed by each contractor, linking them to activities implemented and justifying their necessity.
•	The Form C Financial statement set out in Annex VI, provided by each contractor for that period.
•	A summary financial report consolidating the claimed costs of all the contractors in an aggregate form based on the information provided in Form C.
•	A report on the distribution between contractors made during that period of the Community financial contribution. 
 
Budget allocation 

The proposed plan is for four years (the expected duration of the EC funding). It is envisaged that the expenses associated with the integration of research activities will be higher than the following years, due to setting up the necessary infra-structure, such as WEB-SITE development, database, links to user groups etc. The joint research activities, however, will take up a bigger slice of the budget due to increased joint activities in a maturing network. The budget for integration of research is about 10 % higher than the joint research activities in years 2-4. The extra 10% is set aside for integrating new partners as the project develops.
 
Activity	First year’s budget	Years 2-4	
Integration of Research	50 %	40 %	
Joint Research Activities	20 %	30 %	
Spreading of Excellence	23 % 	23 %	
Management cost 	7 %	7 %	

Figure 7.3 Budget allocation plan

EC funding for the DiNAMITe NoE will be held centrally in the project coordinator’s account. Detailed rules for budget allocation and decisions will be fixed in the consortium agreement.
 The provisional management Board has agreed the first 18-month budget plan. The management board will discuss and decide on updates of the budget plan subsequently and set up detailed 18-month budget plans annually. 
  
The budgets will be assigned to the following DiNAMITe work package categories:
 
Integration of Research
 
 - Researcher mobility and access to equipment/services at partners’ location:
•	Travel and subsistence covered for visiting researcher. 
•	Equipment and/or labour cost covered for the host partner.
(The researcher shall provide a report and material for training/dissemination (if applicable) after completion of each project)

-Cluster meetings and researchers’ participation in ‘cross-cluster meetings’:
•	Travel and subsistence cost covered for active partners. 
•	Room hire, catering and host organisation administrative expenses. 
•	Cluster coordination including basic reporting 
•	Labour and travel & subsistence cost for coordination activities
 
Joint Research Activities
 
-  Additional small research of DiNAMIT project teams needed to ‘fill gaps’ in order to reach excellence (in addition to research that is already integrated under ‘A’)
•	Labour cost, travel and subsistence cost, equipment cost, other cost related to additional research activities.
(The researcher shall provide a report and material for training/dissemination (if applicable) after completion of each project).
 
-  Joint preparation work needed (e.g.: small assessment study, feasibility study) to help to obtain additional funding from other sources in areas to be integrated into DiNAMITe programme at a later stage. 
•	Labour cost, travel & subsistence cost, equipment cost, other cost related to additional research activities.
(The researcher shall provide a report and material for training/dissemination (if applicable) after completion of each project).
 
Spreading of Excellence
 
-   Training activities including conception, preparation, documentation, etc.
•	Travel& subsistence, labour, subcontracting, and other cost.
- Dissemination and networking activities including conception, preparation, documentation, etc.
•	Travel & subsistence, labour, subcontracting, and other cost.
 -   Integration and networking activities towards a self-sustainable network
•	Travel & subsistence, labour, subcontracting, and other cost.
  -  Coordination of training, dissemination, and networking
•	Travel & subsistence, labour, and other cost. 

Management (budget fixed to a maximum of 7% of total EC funds)
 
  Any management activities at the consortium level as defined in EC regulations.
•	Labour, travel & subsistence, subcontracting, and other cost.

Rules for reimbursement of travel expenses and meeting cost
 
Rules for reimbursement or labour cost will be set up by the Management Board in accordance with
EC-approved guidelines 
•	Travel expenses will only be reimbursed for active participants 
•	Travel cost: Economy airfare, 2nd class train fare, or mileage (0.4 Euro/km). 
•	Subsistence (149.63 Euro) for each night – includes hotel, taxi, meals, and all other cost. 
•	Additional expenses will be covered for room hire, catering, and host organisation expenses.

B.8 Joint Programme of Activities – first 18 months

Introduction

The programme for the first 18 months is aimed at beginning the integration of the DiNAMITe members through activities both within clusters and between clusters. Within cluster activities will be centred around the initiation of joint pieces of research that address key issues and promote co-operation. Activities across clusters will also involve joint work but mainly help to catalyse the formation of the new inter-disciplinary DiNAMITe community. Both the integration activities and the joint research will contribute to the target of spreading excellence via training, dissemination and integration towards a sustainable consortium. Linkages are indicated in the Figure below, and the work plan for the first 18 months appears on the next page. Plans for the first 18 months are contained in the following forms.

Characterisation Integration Activities, WP2

Devices  Integration Activities, WP3

Growth Integration Activities, WP1

Theory Integration Activities, WP4

Activities 
For spreading 
Excellence, WP5

Training and Education
WP5.1

Dissemination and Networking
 WP5.2

Integration towards Sustainability
WP5.3

Theory Research  WP4.1

Growth Research  WP1.1

Devices  Research  WP3.1

Characterisation Research  WP2.1

Work plan (first 18 months)

WP1
    M00                 M03                 M06                 M09                 M12                 M15                 M18
|___|___|___|___|___|___|___|___|___|___|___|___|___|___|___|___|___|___|
          D1.1         D1.3                                 D1.5                D1.7                         D1.10               D1.12
WP1(a)
|___|___|___|___|___|___|___|___|___|___|___|___|___|___|___|___|___|___|
          D1.2                 D1.4                                         D1.6         D1.8        D1.9        D1.11      D1.13-
										       D1.15
WP2
    M00                 M03                 M06                 M09                 M12                 M15                 M18
|___|___|___|___|___|___|___|___|___|___|___|___|___|___|___|___|___|___|
                                            D2.1 D2.2 D2.3                D2.4                D2.7  D2.9               D2.11
WP2(a)
|___|___|___|___|___|___|___|___|___|___|___|___|___|___|___|___|___|___|
D2.5 D2.6 D2.8 D2.10             D2.12-
										       D2.14
 WP3
M00                 M03                 M06                 M09                 M12                 M15                 M18
|___|___|___|___|___|___|___|___|___|___|___|___|___|___|___|___|___|___|
                               D3.2        D3.3                                  D3.4 D3.5                D3.7                D3.8 
WP3(a)
|___|___|___|___|___|___|___|___|___|___|___|___|___|___|___|___|___|___|
          D3.1                                                                                                            D3.6               D3.9-
										       D3.11      WP4
M00                 M03                 M06                 M09                 M12                 M15                 M18
|___|___|___|___|___|___|___|___|___|___|___|___|___|___|___|___|___|___|
            D4.1                                               D4.3        D4.4         D4.6                                         D4.9 
WP4(a)
|___|___|___|___|___|___|___|___|___|___|___|___|___|___|___|___|___|___|
                                      D4.2                                         D4.5        D4.7                                D4.10-
							          D4.8 		       D4.12
WP5
M00                 M03                 M06                 M09                 M12                 M15                 M18
|___|___|___|___|___|___|___|___|___|___|___|___|___|___|___|___|___|___|
                                                                                                                                            D5.26
WP5.1
|___|___|___|___|___|___|___|___|___|___|___|___|___|___|___|___|___|___|
            D5.1 D5.4 D5.5                D5.7-               D5.15                               D5.20
		 D5.6	           D5.11	      D5.16
WP5.2
|___|___|___|___|___|___|___|___|___|___|___|___|___|___|___|___|___|___|
            D5.2                                 D5.12-                                      D5.18                                      D5.23-
            D5.3                                  D5.14                                      D5.19                                       D5.25
WP5.3
|___|___|___|___|___|___|___|___|___|___|___|___|___|___|___|___|___|___|
                                       		 D5.17                                               D5.21- D5.22                                      

Workpackage list (18months)

Work-
package 
No1	Workpackage title	Lead 
contractor
No2	Start
month3	End 
month4	Deliv-
erable
No5	
WP1	Integration of research: 
Growth and Materials Development	10	M00	M18	D1.1–D1.12	
WP1(a)	Joint Research:
Growth and Materials Development	10	M00	M18	D1.2-D1.15	
WP2	Integration of research:
Materials and physical characterisation	13	M00	M18	D2.1-D2.11	
WP2(a)	Joint Research:
Materials and physical characterisation	13	M00	M18	D2.5-D2.14	
WP3	Integration of research:
Devices and Device Integration	39	M00	M18	D3.2-D3.8	
WP3(a)	Joint Research:
Devices and Device Integration	39	M00	M18	D3.1-D3.11	
WP4	Integration of research:
Theory and Modelling	1	M00	M18	D4.1-D4.9	
WP4(a)	Joint Research:
Theory and Modelling	1	M00	M18	D4.2-D4.12	
WP5	Spreading of Excellence	15	M00	M18	D5.26	
WP5.1	Training and Education	15	M00	M18	D5.1-D5.20	
WP5.2	Dissemination and Networking	15	M00	M18	D5.2-D5.25	
WP5.3	Integration towards Sustainability	15	M00	M18	D5.17-D5.22	

1Workpackage number: WPn1 – WP n.
2Number of the contractor leading the work in this workpackage.
3Relative start date for the work in the specific workpackages, month 0 marking the start of the project, and all other start dates being relative to this start date.
4Relative end date, month 0 marking the start of the project, and all ends dates being relative to this start date.
5Deliverable number: Number for the deliverable(s)/result(s) mentioned in the workpackage: D1 – Dn.

Workpackage description (18 months)

Workpackage number  WP1                Start date or starting event:  M00
Participant id        10,  8, 9, 13, 14, 15, 18, 19, 20, 22, 34, 35, 38	

1.1.2.1	Objectives
•	To establish calibration of grown material between partners
•	To provide structures as needed to achieve objectives in other workpackages	

1.1.2.2	Description of work

The growth centres will align their calibrations of compositions, material quality etc. through a series of “round robins” with simple and typical layer structures. Such samples and all further work based on them will give a solid foundation to all activities in the project. Furthermore, these calibration samples will aid new groups in assessing the quality of their own samples. This is, in fact, a very practical way of spreading excellence between all participation growth groups and of cross-linking many labs within the European research arena. Moreover, this quality cross-check is essential when one of the “newcomer” groups embarks on a novel approach that aims at improving material quality in a certain way.
The growth centres are also dedicated to provide material as specified by partners in other WPs. In this role, WP1 acts as a major link between all of the WPs of this project. In particular, WP1 will (1) provide structures as needed to compare experiment and theory (e.g. for the investigation of band structure, WP3), (2) provide specific structures for physical characterisation experiments (to correlate materials growth, physical properties and theory, i.e. WPs 1,2 and 4), and (3) develop and provide optimised device structures (for WP3). These activities will provide a very real mechanism for developing integration between all the clusters in the DiNAMITe consortium.

1.1.2.3	Deliverables
D1.5 Complete first calibration of grown material from different partners – M08 
D1.7 Report on progress in intra-cluster integration achieved – M11
D1.10 Summary report on structures supplied for objectives in other WPs – M15 
D1.12 Report on progress in inter-cluster integration achieved – M18	

1.1.2.4	Milestones
D1.1 Commence “round robin” calibration exercise – M01
D1.3 Commence material supply to other WPs – M03	

Workpackage description (18 months)

Workpackage number  WP1(a)                Start date or starting event:  M00
Participant id        10, 8, 9, 13, 14, 15, 18, 19, 20, 22,  34, 35, 38	

1.1.2.5	Objectives
•	To investigate the effects of increasing strain on various structures
•	To compare different growth techniques
•	To investigate annealing routines	

1.1.2.6	Description of work

1.1.2.7	Task 1.1 Growth of structures with increasing strain and complexity
This task will commence with the growth of materials lattice-matched to GaAs for investigation of thick and strain-free layers (InGaAsN, InGaAsNSb, …). These are required for many baseline studies such as of band structure, electrical properties or generally where thin layers such as quantum wells are insufficient. This may in particular hold for studies to detect and identify defects (see WP2, task 2.2). Similarly, growth of thick layers with well-defined, low strain will be carried out to quantify the effect of strain on material properties. QWs and other heterostructures of increasingly complex structure with well-defined strain in the individual layers will be grown in the materials systems InGaAsN/GaAs, InGaAsN/GaAsN/GaAs (with and without strain compensation by the GaAsN layers as above, but with strain-mediating interlayers, i.e. layers with intermediate strain), InGaAsSbN/GaAs etc., as well as In(Ga)As(N) QWs with InAs- (or more generally InGaAsN-) QDots embedded in them.

1.1.2.8	Task 1.2 Comparison of different growth techniques
Growth of nominally identical structures will be performed by MBE, MOMBE and MOVPE for detailed comparison with respect to materials properties and qualities like luminescence efficiency. MOVPE growth will use different N-precursors, carrier gases etc. to study the efficiency of nitrogen incorporation, materials quality etc., whilst MBE growth will use different plasma sources as well as plasma operating conditions to study their effect on the efficiency of nitrogen incorporation, materials quality etc. Basic studies of growth of dilute nitrides will be carried out by in-situ-characterisation (RHEED, RDS, STM …) in both MBE and MOVPE. 

1.1.2.8.1	Task 1.3 Annealing studies
The investigation of annealing routines is required since the dilute nitrides – unlike most other semiconductor materials – are very susceptible to thermal treatment. Such routines will have to be carried out comparatively for fixed types of heterostructures (thick layers (strain-free, tensile, compressively strained), QWs, composite QWs). Annealing routines to be employed are: conventional slow anneal, RTA (rapid thermal anneal), use of different atmospheres etc. After anneal, the created samples will have to undergo physical characterisation in experiments detecting changes in local bonding, QW interdiffusion, changes in defect level or defect character, etc., in close collaboration with WP2 (characterisation).

1.1.2.9	Deliverables
D1.13 Report on the effects of strain and structural complexity – M18
D1.14 Report on different growth techniques – M18
D1.15 Report on annealing routines – M18	

1.1.2.10	Milestones
D1.2 Commence growth of unstrained structures – M01
D1.4 Commence growth of complex structures – M04
D1.8 Report on test structures grown by MBE – M12
D1.9 Report on test structures grown by MOVPE – M14
D1.11 Report on test structures grown by MOMBE – M16
D1.6 Supply annealed structures to WP2 for characterisation – M10	

Deliverables/milestones list for WP1 (18 months)

Deliverable/
milestone no1	Deliverable/milestone title	Delivery/
achieve date
2	Nature

3	Dissemination
level
4	
D1.1	Commence “round robin” calibration exercise	M01	M	CO	
D1.2	Commence growth of unstrained structures	M01	M	CO	
D1.3	Commence material supply to other WPs	M03	M	CO	
D1.4	Commence growth of complex structures	M04	M	CO	
D1.5	Complete first calibration of grown material from different partners	M08	O	CO	
D1.6	Supply annealed structures to WP2 for characterisation	M10	M	CO	
D1.7	Report on progress in intra-cluster integration achieved	M11	R	CO	
D1.8	Report on test structures grown by MBE	M12	M	CO	
D1.9	Report on test structures grown by MOVPE	M14	M	CO	
D1.10	Summary report on structures supplied for objectives in other WPs	M15	R	CO	
D1.11	Report on test structures grown by MOMBE	M16	M	CO	
D1.12	Report on progress in inter-cluster integration achieved	M18	R	CO	
D1.13	Report on the effects of strain and structural complexity	M18	R	CO	
D1.14	Report on different growth techniques	M18	R	CO	
D1.15	Report on annealing routines	M18	R	CO	

1Deliverable number in order of delivery dates: D1 – Dn.
2Month in which the deliverables will be available or milestone achieved. Month 0 marking the start of the project, and all dates being relative to this start date.
3Please indicate the nature of a deliverable using one of the following codes:
	R = Report
	P = Prototype
	D = Demonstrator
	O = Other
If milestone, indicate with M 
4Please indicate the dissemination level for deliverables using one of the following codes:
	PU = Public
	PP = Restricted to other programme participants (including the Commission Services)
	RE = Restricted to a group specified by the consortium (including the Commission Services)
	CO = Confidential, only for members of the consortium (including the Commission Services)

Workpackage description (18 months)

Workpackage number  WP2                Start date or starting event:  M00
Participant id        1, 3, 4, 9, 10, 11, 13, 14, 15, 16, 18, 20, 21, 24, 26, 27, 28, 29, 30, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41,43	

1.1.2.11	Objectives
•	To establish a web-site containing a database of characterisation resources
•	To initiate technical meetings on characterisation issues
•	To develop an interactive web-site between partners	

1.1.2.12	Description of work

A web-site will be established containing a database of all characterisation expertise and resources available (equipment, skills,…) within the NoE, together with scientific results and relevant literature. This will form a valuable resource for the consortium and will be given priority in this workpackage. At the same time technical interest meetings between partners will be initiated to address “difficult” characterisation  challenges. An interactive web-site and Internet discussion groups will be developed on common problems in parameter measurements (accuracy), experimental techniques, etc. The level of integration achieved by these initial steps will be monitored for input to the planning for the next phase of the project.

1.1.2.13	Deliverables
D2.3 Opening of characterisation database web-site to all partners – M08
D2.4 Summary report on integration results and funded activities – M11
D2.7 Opening of interactive web-site/Internet discussion groups on measurements – M14
D2.11 Summary report on integration results and funded activities – M18	

1.1.2.14	Milestones
D2.1 Complete data collection for web-site – M06
D2.2 First technical meeting on characterisation – M07
D2.9 Second technical meeting on characterisation – M15	

Workpackage description (18 months)

Workpackage number  WP2 (a)                Start date or starting event:  M00
Participant id        1, 3, 4, 9, 10, 11, 13, 14, 15, 16, 18, 20, 21, 24, 26, 27, 28, 29, 30, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41	

1.1.2.15	Objectives
•	To develop structural characterisation techniques
•	To investigate defects related to N incorporation 
•	To study band structure modifications due to N incorporation	

1.1.2.16	Description of work

Task 2.1  Structural characterisation of the grown materials
The structural properties of the fabricated nanostructures will be characterised by a variety of high resolution microscopy techniques such as AFM, STM and TEM. In parallel X-ray analysis will be performed in order to determine the strain fields in the structures. The accurate determination of the N content in the structures is known to be a very difficult task. We believe that the combination of various complementary characterisation techniques (microscopy, X-ray (diffraction & photoelectron spectroscopy), Raman spectroscopy and SIMS) should yield an accurate measurement of the N content (average value, dispersion) and hence an understanding of the incorporation process. 

Task 2.2 Characterisation of defects
This task aims at a detailed investigation of the defects related to Nitrogen incorporation in the material. These characterisations are essential since the incorporation of nitrogen in III-V compounds is usually accompanied by a drastic degradation of the optical and electrical properties of the structures (in particular a drop of the emission intensity, a broadening of the PL emission spectrum, a decrease of carrier mobility). The crystalline quality (deep centres, localised states, nitrogen related disorder effects due to different nearest neighbour configurations, impurities, … ) of the structures will be studied by high resolution X-ray diffraction, capacitance spectroscopy, in-plane photovoltaic, photoconductive measurements, DLTS techniques and SIMS. These measurements will also provide trap activation energies and detrapping rates of carriers. The impact of these defects on the optical properties (non-radiative recombination processes, emission peak broadening) will be measured by cw and time-resolved photoluminescence experiments. Detailed studies of the microscopic structure and chemical identification will be carried out with the aid of atomically resolved local probe microscopies (STM/AFM), spin resonance, and isotope analysis of local vibration modes.

Task 2.3  Band structure investigations
Information about the band structure modifications due to nitrogen incorporation (bandgap energy, band offset, confined level energy, effective mass…) and its dependence on composition will be obtained experimentally mainly by optical spectroscopy, for which a wide variety of techniques is available in the consortium. These techniques cover both inter-band optics (including cw and time-resolved photoluminescence, photoluminescence excitation and absorption, photocurrent and photomodulated reflectance spectroscopy) and intra-band optics (cw and time-resolved IR and THz spectroscopy). The drastic modification of the conduction band dispersion characteristics (for epitaxial layers and quantum wells) will be accurately determined through experiments performed under hydrostatic pressure. These efforts will be complemented by cyclotron resonance and magneto-photoluminescence experiments. 
The localised/delocalised duality of the conduction band wavefunctions will be probed by magneto-tunnelling spectroscopy, spatially resolved photoluminescence, high-resolution electron energy loss spectroscopy, and resonant Raman scattering experiments. The localisation of carriers on quantum-dot-like compositional fluctuations will also be studied by near-field magnetophotoluminescence experiments. The carrier recombination dynamics will be studied as a function of temperature by time-resolved photoluminescence or pump-probe transmission/reflection experiments. 

1.1.2.17	Deliverables
D2.12 Report on structural characterisation – M18
D2.13 Report on defect characterisation – M18
D2.14 Report on band structure investigations – M18	

1.1.2.18	Milestones
D2.5 Collect data on structural characterisation – M12
D2.6 Collect data on defects – M13
D2.8 Collect data on band structure – M14
D2.10 Return characterisation data on annealed structures to WP1 – M15	

Deliverables/milestones list for WP2 (18 months)

Deliverable/
milestone no1	Deliverable/milestone title	Delivery/
achieve date
2	Nature

3	Dissemination
level
4	
D2.1	Complete data collection for web-site	M06	M	CO	
D2.2	First technical meeting on characterisation	M07	M	CO	
D2.3	Opening of characterisation database web-site to all partners	M08	O	CO	
D2.4	Summary report on integration results and funded activities	M11	R	CO	
D2.5	Collect data on structural characterisation	M12	M	CO	
D2.6	Collect data on defects	M13	M	CO	
D2.7	Opening of interactive web-site/Internet discussion groups on measurements	M14	O	CO	
D2.8	Collect data on band structure	M14	M	CO	
D2.9	Second technical meeting on characterisation	M15	M	CO	
D2.10	Return characterisation data on annealed structures to WP1	M15	M	CO	
D2.11	Summary report on integration results and funded activities	M18	R	CO	
D2.12	Report on structural characterisation	M18	R	CO	
D2.13	Report on defect characterisation	M18	R	CO	
D2.14	Report on band structure investigations	M18	R	CO	

1Deliverable number in order of delivery dates: D1 – Dn.
2Month in which the deliverables will be available or milestone achieved. Month 0 marking the start of the project, and all dates being relative to this start date.
3Please indicate the nature of a deliverable using one of the following codes:
	R = Report
	P = Prototype
	D = Demonstrator
	O = Other
If milestone, indicate with M 
4Please indicate the dissemination level for deliverables using one of the following codes:
	PU = Public
	PP = Restricted to other programme participants (including the Commission Services)
	RE = Restricted to a group specified by the consortium (including the Commission Services)
	CO = Confidential, only for members of the consortium (including the Commission Services)
Workpackage description (18 months)

Workpackage number  WP3                Start date or starting event:  M00
Participant id         9, 10, 13, 19, 22, 35, 39, 40 	

1.1.2.19	Objectives
•	To establish a series of workshops with other WPs
•	To initiate technical meetings on device issues
•	To commence staff exchange and training activities

1.1.2.20	Description of work
Workshops with other clusters will aim to solve key generic research interests and will be in the interests of all partners as joint publications will be planned and joint research proposals will be prepared with the objective of solving problems that require dedicated man-power, consumables and equipment. Within the devices WP a series of technical meetings between partners will address current issues of device design, fabrication and testing as the project proceeds. Exchange of researchers between WP partners will assist transfer of know-how as well as facilitating career development for the staff concerned. Similarly, training of students in device-related skills will be achieved through a mix of formal teaching in relevant lecture courses and “hands-on” experience at partner sites.

1.1.2.21	Deliverables
D3.4 Report on integration activities – M11
D3.8 Report on integration activities – M18	

1.1.2.22	Milestones
D3.3 First workshop with partners from other WPs – M06
D3.2 First technical meeting on device issues– M04
D3.7 Begin training in device-related skills– M15
D3.5 Initiate exchange of staff – M12	

Workpackage description (18 months)

Workpackage number  WP3 (a)                Start date or starting event:  M00
Participant id        9, 10, 13, 19, 22, 35, 39, 40	

1.1.2.23	Objectives
•	To further characterise long-wavelength edge-emitting lasers in GaInNAs
•	To develop and characterise GaInNAs VCSELs with GaAs-based Bragg stacks
•	To assess the potential of GaInNAs SOAs and VCSOAs

1.1.2.24	Description of work

1.1.2.25	Task 3.1 Further characterisation of GaInNAs edge-emitting       lasers
Edge-emitting dilute nitride lasers at 1.3 mm are already under study by many of the DiNMITe partners. This task will therefore aim to compare and co-ordinate the results of the partners by a “round robin” exercise with well-studied standard devices. Thus will formalise a number of informal collaborations that are already in progress between the partners. 

1.1.2.26	Task 3.2 Development and characterisation of VCSELs
Electrically-driven format devices are the preferred embodiment for mass-market applications, offering wall-plug-efficient operation, direct modulation, low cost and compactness. Electrically-driven VCSELs have been the primary focus of international work to date with GaInNAs, although major effort is still required to extend these devices in wavelength coverage, to optimise threshold and power performance and to create special high-functionality embodiments such as MEMS-tuneable structures (which will in effect be VECSELs). The objective for this package is to address all of these aspects and report on progress after 18 months.

1.1.2.27	Task 3.3 Assessment of GaInNAs SOAs and VCSOAs
At present no practical edge-emitting dilute nitride SOAs have been reported, although it is predicted that they will have favourable properties at telecom wavelengths. Electrically-driven GaInNAs VCSOAs have also yet to be demonstrated, although optically-pumped versions are already being evaluated within the DiNAMITe consortium. It is therefore timely to attempt an assessment of the potential of these devices both in terms of performance and applications in the volatile telecommunications environment.

1.1.2.28	Deliverables
D3.9 Report on characterisation of edge-emitting lasers – M18
D3.10 Report on development of VCSELs – M18
D3.11 Report on SOAs and VCSOAs – M18	

1.1.2.29	Milestones
D3.1 Commence “round robin” device exercise – M01
D3.6 Demonstrate electrically-driven VCSOA – M15	

Deliverables/milestones list for WP3 (18 months)

Deliverable/
milestone 
no1	Deliverable/milestone title	Delivery/
achieve 
date
2	Nature

3	Dissemination
level
4	
D3.1	Commence “round robin” device exercise	M01	M	CO	
D3.2	First technical meeting on device issues	M04	M	CO	
D3.3	First workshop with partners from other WPs	M06	M	CO	
D3.4	Report on integration activities	M11	R	CO	
D3.5	Initiate exchange of staff	M12	M	CO	
D3.6	Demonstrate electrically-driven VCSOA	M15	M	CO	
D3.7	Begin training in device-related skills	M15	M	CO	
D3.8	Report on integration activities	M18	R	CO	
D3.9	Report on characterisation of edge-emitting lasers	M18	R	CO	
D3.10	Report on development of VCSELs	M18	R	CO	
D3.11	Report on SOAs and VCSOAs	M18	R	CO	

1Deliverable number in order of delivery dates: D1 – Dn.
2Month in which the deliverables will be available or milestone achieved. Month 0 marking the start of the project, and all dates being relative to this start date.
3Please indicate the nature of a deliverable using one of the following codes:
	R = Report
	P = Prototype
	D = Demonstrator
	O = Other
If milestone, indicate with M 
4Please indicate the dissemination level for deliverables using one of the following codes:
	PU = Public
	PP = Restricted to other programme participants (including the Commission Services)
	RE = Restricted to a group specified by the consortium (including the Commission Services)
	CO = Confidential, only for members of the consortium (including the Commission Services)

Workpackage description (18 months)

Workpackage number  WP4                Start date or starting event:  M00
Participant id        1, 4, 6, 11, 18, 23, 31, 40, 42,43	

1.1.2.30	Objectives
•	To establish an interactive web-site and Internet discussion groups on common problems in theory and modelling
•	To initiate specialist meetings to address “difficult” problems in theory and modelling
•	To commence secondment programme for theory and modelling specialists

1.1.2.31	Description of work
Theory and modelling activities are well suited to interaction over the Internet, and it is therefore a high priority in this WP to establish an interactive web-site and Internet discussion groups. Whilst this mechanism will be adequate for day-to day interactions, there is also a need for specialist meetings where specific theoretical problems can be discussed face-to-face. A third priority is to initiate a cross-cluster secondment programme for theory and modelling specialists, including visits to growth, fabrication and characterisation facilities. This will have the effect of improving understanding of the technology and also defining and generating data required for model validation in close interaction with appropriate experts. In addition, the other WP partners will also be able to bring specific problems to the direct attention of theory/modelling specialists by this mechanism.

1.1.2.32	Deliverables
D4.4 Report on integration activities – M10
D4.9 Report on integration activities – M18	

1.1.2.33	Milestones
D4.1 Opening of interactive web-site/Internet discussion groups on theory and modelling – M03
D4.3 First specialist meeting on problems in theory and modelling – M08
D4.6 Initiate specialist secondment programme – M12	

Workpackage description (18 months)

Workpackage number  WP4 (a)                Start date or starting event:  M00
Participant id        1, 4, 6, 11, 18, 23, 31, 40, 42	

1.1.2.34	Objectives
•	To calculate band structures for various dilute nitride materials
•	To make calculations of radiative and non-radiative recombination rates
•	To develop models of dilute nitride laser dynamics

1.1.2.35	Description of work
1.1.2.36	Task 4.1 Band structure calculations
This task will focus on assessing the accuracy of the band anticrossing (BAC) model that is widely used for dilute nitrides. Calculations of densities-of-states and of effective mass values for electrons and holes will be made and the importance of conduction band non-parabolicity will be assessed for the various materials of interest. The important effects of strain in epilayers, QWs and QDs must be included in the theoretical studies, and issues of band alignment in heterostructures will be addressed

1.1.2.37	Task 4.2 Recombination calculations
Radiative and non-radiative recombination rates will be studied in this task. The spontaneous and stimulated emission rates and gain spectra will be calculated for a number of dilute nitride materials and wavelength ranges. The non-radiative Auger recombination rates will also be studied and their temperature dependence evaluated. The results of all these calculations will be compared to experimental data wherever possible.

1.1.2.38	Task 4.3 Simulation of laser dynamics
This topic has received very little attention since most dilute nitride laser models have been restricted to cw operation so far. It will therefore be necessary to extend the models to deal with transient behaviour and to address key topics such as modulation response, short pulse generation and recovery time for the dilute nitrides. As knowledge builds in this topic we may expect more complete device simulation models to be constructed and tested against experimental results.

1.1.2.39	Deliverables
D4.10  Report on band structures for various dilute nitride materials – M18
D4.11  Report on calculations of radiative and non-radiative recombination rates – M18
D4.12  Report on models of dilute nitride laser dynamics – M18

1.1.2.40	Milestones
D4.5 Assess accuracy of BAC model – M11
D4.7 Calculate Auger recombination rates – M13
D4.2 Simulate laser modulation – M05
D4.8 Model short pulse generation - M13	

Deliverables/milestones list for WP4 (18 months)

Deliverable/
milestone 
no1	Deliverable/milestone title	Delivery/
achieve 
date
2	Nature

3	Dissemination
level
4	
D4.1	Opening of interactive web-site/Internet discussion groups on theory and modelling	M01	M	CO	
D4.2	Simulate laser modulation	M05	M	CO	
D4.3	First specialist meeting on problems in theory and modelling	M08	M	CO	
D4.4	Report on integration activities	M10	R	CO	
D4.5	Assess accuracy of BAC model	M11	M	CO	
D4.6	Initiate specialist secondment programme	M12	M	CO	
D4.7	Calculate Auger recombination rates	M13	M	CO	
D4.8	Model short pulse generation	M13	M	CO	
D4.9	Report on integration activities	M18	R	CO	
D4.10	Report on band structures for various dilute nitride materials	M18	R	CO	
D4.11	Report on calculations of radiative and non-radiative recombination rates	M18	R	CO	
D4.12	Report on models of dilute nitride laser dynamics	M18	R	CO	

1Deliverable number in order of delivery dates: D1 – Dn.
2Month in which the deliverables will be available or milestone achieved. Month 0 marking the start of the project, and all dates being relative to this start date.
3Please indicate the nature of a deliverable using one of the following codes:
	R = Report
	P = Prototype
	D = Demonstrator
	O = Other
If milestone, indicate with M 
4Please indicate the dissemination level for deliverables using one of the following codes:
	PU = Public
	PP = Restricted to other programme participants (including the Commission Services)
	RE = Restricted to a group specified by the consortium (including the Commission Services)
	CO = Confidential, only for members of the consortium (including the Commission Services)

Workpackage description (18 months)

Workpackage number  WP5                Start date or starting event:  M00
Participant id        15	

1.1.2.41	Objectives
•	To train academic and industrial researchers, students and other key staff with the highest-level knowledge and skills to ensure the sustainability of Europe's excellence in dilute nitrides and related optoelectronic materials, devices and systems
•	To disseminate knowledge and technologies of the NoE to strength the competitiveness of European scientific and industrial communities and to raise public awareness of science
•	To consolidate the integration of the NoE and secure alternative funding to ensure a self-sufficient consortium after the FP6 funding

1.1.2.42	Description of work
The objectives will be achieved by specific activities in WP5.1, WP5.2 and WP5.3 that are managed and co-ordinated by WP5	

1.1.2.43	Deliverables
D 5.26 Report on management and co-ordination of WP5.1, WP5.2 and WP5.3 – M18	

1.1.2.44	Milestones

Workpackage description (18 months)

Workpackage number  WP5.1                Start date or starting event:  M00
Participant id        all	

1.1.2.45	Objectives
•	To establish tutorial workshops
•	To develop summer/winter schools
•	To initiate joint MSc and PhD supervision
•	To commence postdoc fairs and visits

1.1.2.46	Description of work
The short courses and tutorial workshops programme should serve to address a general aspect or a particular issue that is timely and important in research and development of dilute nitrides. It will feature detailed presentations over one or more days by leading researchers on the given topic. The topic for the first workshop will be "Efficiency of GaInNAs lasers and beyond" hosted by Infineon, scheduled in the third month after the NoE is funded. 
The summer and winter schools programme is intended to provide a substantial coverage of chosen research areas or topics with systematic, in-depth and state-of-the-art knowledge and skills. They should be organized at hub institutions that have the relevant expertise and facilities, such that hands-on training can be conducted on-site. The schools should typically last for two weeks to one month. The intended participants will be academic and industrial researchers, students and other key staff. The first summer school will be organised in 2004 on the topic of "Spectroscopy of dilute nitrides" at the University of  Warwick.
Within the joint Master and Ph.D. supervision/programme, we intend to establish a virtual DiNAMITe graduate school. The school will have a common list of lectures and courses available to all partners within and outside of the NoE, given in partner institutions, or by lecture tours (given by leading scientists) or by DiNAMITe summer/winter schools. The school will also make available theoretical and experimental expertise and facilities of all partners for thesis work of participating students.

1.1.2.47	Deliverables
D5.6 Establish tutorial workshops – M03
D5.16 Develop summer/winter schools – M09
D5.11 Initiate joint MSc/Ph.D. supervision/programme – M06
D5.8 Commence postdoc fairs and visits – M06

1.1.2.48	Milestones
D5.1 Planning meeting of the First Tutorial Workshop - M01
D5.4 Calls for joint Master and Ph.D. proposals - M02
D5.5 First Tutorial Workshop on "Efficiency of GaInNAs lasers and beyond" in Munich – M03
D5.7 The first postdoc fair – M06
D5.9 Planning meeting of the First Summer School on "Spectroscopy of dilute nitrides" – M06
D5.10 Joint Master and Ph.D. courses and lecture tours – M06
M5.15 First Summer School on "Spectroscopy of dilute nitrides" in Warwick – M09
M5.20 Winter school on "Growth of dilute nitrides" in ?? – M14

Workpackage description (18 months)

Workpackage number  WP5.2                Start date or starting event:  M00
Participant id        all	

1.1.2.49	Objectives
•	To establish a DiNAMITe Website
•	To encourage publications of results
•	To organise conferences and symposia

1.1.2.50	Description of work
It is intended to establish a dedicated interactive DINAMITE WEB site that is mostly public. A full list of the information to be included can be found in the part of section B4.3 that deals with WP5.2. This workpackage will also encourage publication of scientific results in international journals in which the partners of the NoE have already shown an excellent track-record, publication of special issue journals (a special issue in the Journal of Physics: Condensed Matter Physics is in preparation, edited by Prof. N. Balkan of the NoE), and editing topical books (Profs. I.A. Buyanova and W.M. Chen from the NoE are the editors of a book on "Physics and Application of Dilute Nitrides" by Taylor & Francis to be published in 2004). The DiNAMITe NoE will provide the leadership or assistance in the organization and hosting of major international conferences and meetings at DiNAMITe core sites. An annual symposium in the research area of the DiNAMITe NoE at the European Materials Research Society Spring Meeting will be organized by the NoE, and will serve as a flagship scientific meeting of the NoE that will be completely open to scientists outside of the NoE. The first DiNAMITe symposium is scheduled for June 2004.

1.1.2.51	Deliverables
D5.3 Establishment of the DiNAMITe Website – M01
D5.24 Publication of scientific results in international scientific journals and proceedings – M18
D5.25 Editing special issue journals and books – M18
D5.13 Organization of international conferences – M06

1.1.2.52	Milestones
D5.2 Opening of the DINAMITE Website – M01
D5.12 Organization of the first DINAMITE symposium - on "Dilute nitrides and
related highly mismatched semiconductors" at the E-MRS Spring Meeting, Strasbourg, France – M06
D5.14 Publication of a book on "Physics and Applications of dilute nitrides" by Taylor&Francis –M06
D5.18 Organization of a symposium on "Photonic Materials" at the American MRS Fall Meeting, Boston, USA – M12
D5.19 Publication of a special issue in the Journal of Physics: Condensed Matter Physics on "Dilute nitrides"- M12
D5.23 Organization of the second DINAMITE symposium - on "Dilute nitrides and related highly mismatched semiconductors II" at the E-MRS Spring Meeting, Strasbourg, France –M18

Workpackage description (18 months)

Workpackage number  WP5.3                Start date or starting event:  M00
Participant id        all	

1.1.2.53	Objectives
•	To initiate student conferences

1.1.2.54	Description of work
One of the first steps to be taken to ensure a durable and self-contained consortium will be to organize PhD student conferences (by students and for students), which will help to maintain and strengthen the future scientific collaboration in Europe.	

1.1.2.55	Deliverables
D5.22 Organization of student conferences – M16

1.1.2.56	Milestones
D5.17 Planning meeting for first student conference – M10
D5.21 First student conference – M16	

Deliverables/milestones list for WP5 (18 months)

Deliverable/
milestone no1	Deliverable/milestone title	Delivery/
achieve date
2	Nature

3	Dissemination
level
4	
D5.1	Planning meeting of the First Tutorial Workshop	M01	M	CO	
D5.2	Opening of the DiNAMITe Website	M01	M	PU	
D5.3	Establishment of the DiNAMITe Website	M01	O	PU	
D5.4	Calls for joint Master and Ph.D. proposals	M02	M	CO	
D5.5	First Tutorial Workshop 	M03	M	RE	
D5.6	Establish tutorial workshops	M03	O	RE	
D5.7	First postdoc fair	M06	M	RE	
D5.8	Commence postdoc fairs and visits	M06	O	RE	
D5.9	Planning meeting of the First Summer School	M06	M	CO	
D5.10	Joint Master and Ph.D. courses and lecture tours	M06	M	RE	
D5.11	Initiate joint MSc/Ph.D. supervision/programme	M06	O	RE	
D5.12	First DiNAMITe symposium	M06	M	PU	
D5.13	Organization of international conferences	M06	O	PU	
D5.14	Publication of a book	M06	M	PU	
D5.15	First Summer School	M09	M	PU	
D5.16	Develop summer/winter schools	M09	O	PU	
D5.17	Planning meeting for first student conference	M10	M	CO	
D5.18	Organization of a symposium 	M12	M	PU	
D5.19	Publication of a special issue	M12	M	PU	
D5.20	First Winter School	M14	M	PU	
D5.21	First student conference	M16	M	RE	
D5.22	Organisation of student conferences	M16	O	RE	
D5.23	Second DiNAMITe symposium	M18	M	PU	
D5.24	Publication of scientific results	M18	O	PU	
D5.25	Editing special issue journals and books	M18	O	PU	
D5.26	Report on management and co-ordination	M18	R	PP	

1Deliverable number in order of delivery dates: D1 – Dn.
2Month in which the deliverables will be available or milestone achieved. Month 0 marking the start of the project, and all dates being relative to this start date.
3Please indicate the nature of a deliverable using one of the following codes:
	R = Report
	P = Prototype
	D = Demonstrator
	O = Other
If milestone, indicate with M 
4Please indicate the dissemination level for deliverables using one of the following codes:
	PU = Public
	PP = Restricted to other programme participants (including the Commission Services)
	RE = Restricted to a group specified by the consortium (including the Commission Services)
	CO = Confidential, only for members of the consortium (including the Commission Services)

B.9 Other issues

A. Proposers are requested to fill in the following table

Does your proposed research raise sensitive ethical questions related to:	YES	NO	
Human beings		X	
Human biological samples		X	
Personal Data (whether identified by name or not)		X	
Generic Information		X	
Animals		X	

B. Proposers are requested to confirm that the proposed research does not involve:
  
•	Research activity aimed at human cloning for reproductive purposes,
•	Research activity intended to modify the genetic heritage of human beings which could make such changes heritable
•	Research activity intended to create human embryos solely for the purpose of research or for the purpose of stem cell procurement, including by means of somatic cell nuclear transfer;
•	Research involving the use of human embryos or embryonic stem cells with the exception of banked or isolated human embryonic stem cells in culture

YES	NO	

Confirmation : the proposed research involves none of the issues listed in section B		X	

B.10 Gender issues

Men and women will have equal opportunities in all the activities (including management, spreading excellence, research and scientific integration) of DiNAMITe 

All the members DiNAMITe network of excellence supports fully that 

•	Women’s participation in research must be encouraged both as active participant and within the evaluation, consultation and implementation processes.
•	Research must address equally women’s and men’s needs,
•	Research must be carried out to enhance the of inter-gender understanding and to
	contribute gender issues in general.

DiNAMITe supports the following EC policy and action plan:

•	The European policy of equal opportunities between women and men is enshrined in the Treaty on European Union. Articles 2 and 3 establish equality between women and men as a specific task of the Community, as well as a horizontal objective affecting all Community tasks. 
•	The Treaty seeks not only to eliminate inequalities, but also to promote equality. The Commission has adopted a gender mainstreaming strategy by which each policy area, including that of research, must contribute to promoting gender equality. 

The DiNAMITe gender issue action plan:

•	Specific measures will be taken to increase the number of women working in the project and to bring them into key positions of the project,
•	DiNAMITe will appoint a member of the Management Board to take responsibility for gender issues. It will be made an agenda item at Management Board meeting when useful or necessary (See section B7).